Did You Know...
...that the first rickshaw was invented in 1869 by an American Baptist minister, the Rev. E. Jonathan Scobie, to transport his invalid wife around the streets of Yokohama?
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| Number | Title | Issue Date |
| 7894931 | Method and apparatus for prediction of amount of deformation due to shrinkage of molded article The method of predicting the amount of deformation due to shrinkage of a molded article of the present invention finds a support point P of the bending moment M from a distribution of shrinkage rates of a molding material forming a molded article 10 and uses ... | 02/22/2011 |
| 7722076 | Knee airbag device A knee airbag device includes a knee airbag that is disposed in a folded state inside a steering column cover inside which a projection body that projects downward toward one side in a vehicle-width direction is disposed in a rear area, and a cylindrical inflator th... | 05/25/2010 |
| 7424899 | Hollow-weave airbag A hollow-weave airbag is constituted of a bag portion (11) with a 1/1 bag structure, and a closed portion (12) that has two or more weave structures and adjoins the bag portion 11. In addition, the closed portion (12) is constituted of, i... | 09/16/2008 |
| 7157746 | Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The... | 01/02/2007 |
| 7111964 | LED package An LED package has a light emitting element, a first optical section that is disposed around the light emitting element, and a second optical section that is disposed around the first optical while being separated from the first optical section. A gap is formed betw... | 09/26/2006 |
| 7096873 | Method for manufacturing a group III nitride compound semiconductor device A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semicondu... | 08/29/2006 |
| 7014901 | Skin and manufacturing method thereof, manufacturing method of skin for air bag door and air bag door The present invention intends to provide an air bag door construction in which the air bag develops smoothly and securely, the skin can be easily produced with small man-hour, and which is excellent in the surface appearance. The skin 50 is formed by a... | 03/21/2006 |
| 6965126 | Light-emitting element In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a ... | 11/15/2005 |
| 6956245 | Group III nitride compound semiconductor light-emitting element A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconducto... | 10/18/2005 |
| 6946788 | Light-emitting element A light-emitting element has a light-emitting layer and at lease one light-extracting portion. At least a partial part of the light-extracting portion is formed into a concave or convex surface for enhancing the efficiency of extracting light. Another light-emitting... | 09/20/2005 |
| 6943380 | Light emitting device having phosphor of alkaline earth metal silicate The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The... | 09/13/2005 |
| 6932880 | Method of manufacturing optical waveguide device Transparent parallel planar plates which are members for retaining an optical waveguide are provided erectly in an optical path of light in a transparent vessel in advance. An optical fiber is fixed into the transparent vessel while the optical fiber penetrates the ... | 08/23/2005 |
| 6925100 | Communication device In an LED, the area of contact between an ohmic electrode formed on a contact layer and the contact layer serves as an effective light-emitting area of a light-emitting layer. Therefore, while the area of contact between the ohmic electrode and the contact layer is ... | 08/02/2005 |
| 6925233 | Optical waveguide device manufacturing jig, method of manufacturing optical waveguide device by use of the same jig, and the same optical waveguide device Interference filters which are optical components are erected in advance on optical paths in a transparent container, and the transparent container is filled with a photo-curable resin solution. Further, a jig is prepared for manufacturing an optical waveguide devic... | 08/02/2005 |
| 6921923 | Group III nitride compound semiconductor device An InGaN layer is formed on an undercoat layer of the same composition as the InGaN layer. The composition of the undercoat layer may be changed continuously or stepwise. ... | 07/26/2005 |
| 6918961 | Group III nitride compound semiconductor device and producing method therefor A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rockin... | 07/19/2005 |
| 6908220 | Vehicle lamp A vehicle rear lamp including first light-emitting device emitting a red light, and second light-emitting device emitting a light different from the red light, preferably blue or green, wherein the first and second light-emitting devices are provided in a region for... | 06/21/2005 |
| 6900587 | Light-emitting diode In an LED, when electric power is supplied to a blue light-emitting element through a pair of leads, light is emitted upward from an upper surface of the blue light-emitting element and, at the same time, light is radiated from side and lower surfaces of the blue li... | 05/31/2005 |
| 6889456 | Illumination apparatus An LED light source is received in a groove portion provided in a light guide plate. The groove portion is covered with a base member, and the circumferential edge of the base member is bonded to the light guide plate. Concave portions or convex portions having desi... | 05/10/2005 |
| 6861663 | Group III nitride compound semiconductor light-emitting device A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n+ layer of a high carrier density, which is about 4.0 μm thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An interme... | 03/01/2005 |
| 6835966 | Method for manufacturing gallium nitride compound semiconductor An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2.... | 12/28/2004 |
| 6824290 | Illumination device An illumination device is composed by arranging a shutter member on a light emitting side of an LED light source, capable of changing a condition of light illuminating the outside when a position or the shutter member is changed by slide or rotation. ... | 11/30/2004 |
| 6821800 | Semiconductor light-emitting device and manufacturing method thereof In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1... | 11/23/2004 |
| 6800685 | Polyester resin composition for engine peripheral parts The present invention provides a polyester resin composition for engine peripheral parts, the resin composition comprising at least one polymer selected from the group consisting of polyethylene terephthalate and an ethylene terephthalate copolymer; an inorganic rei... | 10/05/2004 |
| 6794690 | Group III nitride compound semiconductor light-emitting element A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag an... | 09/21/2004 |
| 6781648 | Liquid-crystal display device A light source in a backlight portion is composed of red LEDs, green LEDs, and blue LEDs. The numbers of respective kinds of LEDs used are selected so that the number of blue LEDs is not smaller than the number of red LEDs and the number of blue LEDs is not smaller ... | 08/24/2004 |
| 6777805 | Group-III nitride compound semiconductor device An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an ... | 08/17/2004 |
| 6777453 | Method of reclaiming crosslinked rubber, and molded article of reclaimed rubber The object of the present invention is to provide a method of reclaiming crosslinked rubber wherein a reduction of qualities due to generation of decomposed products hardly occurs, and a molding of reclaimed rubber. In a reclamation step of reclaiming crossli... | 08/17/2004 |
| 6762070 | Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensity A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type Aly | 07/13/2004 |
| 6734468 | Devices related to electrode pads for p-type group III nitride compound semiconductors An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the t... | 05/11/2004 |
| 6717355 | Light-emitting unit A light-emitting device with an emission wavelength range of from 360 nm to 550 nm and a fluorescent material made of Ca—Al—Si—O—N oxynitride activated with Eu2+ are used so that a part of light emitted from the light-emitting device is emitted wh... | 04/06/2004 |
| 6623998 | Method for manufacturing group III nitride compound semiconductor device A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the gr... | 09/23/2003 |
| 6617668 | Methods and devices using group III nitride compound semiconductor A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semicond... | 09/09/2003 |
| 6617061 | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2 Ga0.8 N 50 nm thick and 20 layers of Ga0.99 In0.01 N 20 nm thick. The clad layer about 1.4 μm thick has a l... | 09/09/2003 |
| 6617787 | Light-emitting system with alicyclic epoxy sealing member An alicyclic epoxy resin is used as a material for forming a member for sealing a Group III nitride compound semiconductor light-emitting device.... | 09/09/2003 |
| 6589808 | GaN type semiconductor device A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.... | 07/08/2003 |
| 6583550 | Fluorescent tube with light emitting diodes A fluorescent tube is constituted by a fluorescent tubular body having a transparent glass tube coated with a fluorescent layer containing a fluorescent material on its inner surface, and an ultraviolet LED substrate inserted in the fluorescent tubular bo... | 06/24/2003 |
| 6580098 | Method for manufacturing gallium nitride compound semiconductor An Al0.15 Ga0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the... | 06/17/2003 |
| 6570186 | Light emitting device using group III nitride compound semiconductor A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about 3/4 thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed a... | 05/27/2003 |
| 6550940 | Lighting device A lighting device has an LED light source and a lens. The lens includes a light emitting surface arranged substantially parallel to a wall of a container when the device is attached to the wall, and a first light receiving surface. The first light receivi... | 04/22/2003 |
