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Patent No. 5307162

Cloaking System Using Optoelectronically Controlled Camouflage

A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.

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Assignee: Touch Micro-System Technology Inc.


Location: Yang-Mei, Taoyuan Hsien, TW
No. of patents: 25

NumberTitleIssue Date
7821094Light emitting diode structure
A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating t...
10/26/2010
7795131Method of fabricating metal interconnects and inter-metal dielectric layer thereof
A method of fabricating metal interconnects and an inter-metal dielectric layer thereof. A first metal interconnect pattern and a second metal interconnect pattern disposed thereon are formed on a substrate by plating processes. Subsequently, an inter-metal dielectr...
09/14/2010
7741772White LED package structure having a silicon substrate and method of making the same
A white light emitting diode package structure having a silicon substrate is disclosed. The white light emitting diode package structure comprises a silicon substrate having a plurality of cup-structures thereon, one of a plurality of blue light emitting diodes is r...
06/22/2010
7622334Wafer-level packaging cutting method capable of protecting contact pads
A cutting method for wafer-level packaging capable of protecting the contact pad, in which several cavities and precutting lines are formed at the front surface of a cap wafer, and the depth of each precutting line is lesser than the thickness of the cap wafer, foll...
11/24/2009
7582511Method for wafer level chip scale packaging with passive components integrated into packaging structure
The present invention provides a Wafer Level Chip Scale Packaging structure including a die, at least one passive component, a combining layer, an isolating layer, at least one connecting wire, an internal pad and a passivation layer. The die includes a shallow conn...
09/01/2009
7566574Method of performing a double-sided process
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled in...
07/28/2009
7528000Method of fabricating optical device caps
A wafer having a plurality of through holes is provided, and a glass wafer is disposed on the wafer. A plate having a plurality of concave cavities is disposed on the glass wafer, wherein the concave cavities corresponding to the through holes of the wafer so that a...
05/05/2009
7510892Light emitting diode structure and manufacturing method thereof
A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating t...
03/31/2009
7505118Wafer carrier
A wafer carrier for carrying a wafer includes a transparent base and a conducting layer. The transparent base has dimensions similar to that of the wafer, and bonds the wafer with a bonding layer. The conducting layer is transparent, and can be attracted by an elect...
03/17/2009
7465601Method of forming suspended structure
A method of forming a suspended structure is disclosed. Initially, a substrate is provided. A patterned first sacrificial layer and a patterned second sacrificial layer are formed on a front surface of the substrate. The second sacrificial layer has an opening expos...
12/16/2008
7456043Method of fabricating microphone device and thermal oxide layer and low-stress structural layer thereof
A substrate is provided and a plurality of trenches are formed in the front surface of the substrate. Then, a thermal oxide layer is formed on inner walls of the trenches and the front surface of the substrate. Subsequently, a first structural layer is formed on the...
11/25/2008
7432208Method of manufacturing suspension structure
A method of manufacturing a suspension structure including providing a substrate, forming a first photoresist pattern on the substrate, heating the first photoresist pattern to harden it as a sacrificial layer, forming a second photoresist pattern on the substrate a...
10/07/2008
7413963Method of edge bevel rinse
A method of edge bevel rinse. First, a wafer having a coating material layer disposed thereon is provided. A light beam is optically projected on the wafer to form a reference pattern. The reference pattern defines a central region, and a bevel region surrounding th...
08/19/2008
7410821Method of fabricating suspended structure
A substrate having a sacrificial layer and a structural layer disposed on the front surface of the substrate is provided. Thereon an opening is formed on the back surface of the substrate and the sacrificial layer is exposed partially. A wet etching process is perfo...
08/12/2008
7395706Micro sample heating apparatus and method of making the same
A micro sample heating apparatus has a substrate, a micro heating device disposed on a first surface of the substrate, a cavity having an inclined sidewall and corresponding to the micro heating device positioned in a second surface of the substrate, and an isolatio...
07/08/2008
7393784Method of manufacturing suspension structure and chamber
A method of manufacturing a suspension structure including providing a substrate, forming a hole and a sacrificial layer filling the hole on the substrate, forming a patterned photoresist layer on the substrate and the sacrificial layer, the patterned photoresist la...
07/01/2008
7392687Method of calibrating zero offset of a pressure sensor
A piezoresistive pressure sensor test sample is first provided, and a zero offset of the piezoresistive pressure sensor test sample is measured. Subsequently, a stress deviation corresponding to the zero offset is calculated. Thereafter, at least a piezoresistive pr...
07/01/2008
7393774Method of fabricating microconnectors
A method of fabricating microconnectors. A wafer is provided, and a dielectric layer is formed on a first surface of the wafer. The dielectric layer is bonded to a support wafer, and a thinning process is performed. A second surface of the wafer is then bonded to th...
07/01/2008
7361284Method for wafer-level package
A method for wafer-level package. A cap wafer having cavities is bonded to a support wafer, and a portion of the cap wafer is etched through. The cap wafer is released from the support wafer, and bonded to a transparent wafer, and a portion of the cap wafer correspo...
04/22/2008
7306955Method of performing a double-sided process
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled in...
12/11/2007
7297610Method of segmenting a wafer
First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the m...
11/20/2007
7262078Method of forming a wear-resistant dielectric layer
A substrate is provided. The substrate includes a plurality of devices disposed in the substrate, a plurality of contact pads disposed on a surface of the substrate and electrically connected to the devices, and a surface dielectric layer positioned on the surface o...
08/28/2007
7258806Method of fabricating a diaphragm of a capacitive microphone device
A method of fabricating a diaphragm of a capacitive microphone device. First, a substrate is provided, and a dielectric layer on a first surface of the substrate is formed. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and a d...
08/21/2007
7256128Method of double-sided etching
A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding l...
08/14/2007
7235185Method of protecting wafer front pattern and method of performing double-sided process
A wafer comprising a front surface and a back surface is provided. The wafer further includes a front pattern on the front surface, the front pattern having a plurality of holes. A low-viscosity fluid is formed on the front surface and filled into the holes. Followi...
06/26/2007
 
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