Assignee: Toshiba Ceramics Co., Ltd.

Location: Tokyo, JP
No. of patents: 166

Number	Title	Issue Date
D604257	Heater for semiconductor manufacturing	11/17/2009
7276125	Barrel type susceptor The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each pa...	10/02/2007
7255775	Semiconductor wafer treatment member There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the prese...	08/14/2007
7250357	Manufacturing method for strained silicon wafer A manufacturing method for producing a stained silicon wafer has the steps of forming an Si1-xGex composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si1-xGe	07/31/2007
7247583	Manufacturing method for strained silicon wafer A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased step...	07/24/2007
7226513	Silicon wafer cleaning method This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon...	06/05/2007
7193294	Semiconductor substrate comprising a support substrate which comprises a gettering site A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond e...	03/20/2007
7175911	Titanium dioxide fine particles and method for producing the same, and method for producing visible light activatable photocatalyst The invention provides titanium dioxide fine particles, wherein nitrogen and at least one element selected from carbon, hydrogen, sulfur doped in titanium dioxide by heat-treating fine particles of a material of titanium dioxide at 500° C. or more and 600° C. or l...	02/13/2007
7149341	Wafer inspection apparatus A wafer inspection apparatus has a supporting means (10) for rotatably supporting a wafer (W) formed of a disk, a circumferential edge imaging means (40) for imaging a circumferential edge (S) of the wafer (W) that is supported by the supporting means ...	12/12/2006
7090932	Plasma resistant member A plasma resistant member has a base material and a coating layer made of an Y2O3, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 μm or more and the Y2O3 of the c...	08/15/2006
7082789	Silica glass member for semiconductor and production method thereof A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0 poise or more at 1200° C. is provided as a silica glass m...	08/01/2006
7083677	Silicon seed crystal and method for manufacturing silicon single crystal Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a diameter contracted smaller than, or equal to that of the contact surface...	08/01/2006
7077905	Apparatus for pulling a single crystal An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by l...	07/18/2006
7072578	Carbon wire heating object sealing heater and fluid heating apparatus using the same heater A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or ...	07/04/2006
7060597	Manufacturing method for a silicon substrate having strained layer A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 μm or more betwee...	06/13/2006
7048796	Silicon single crystal wafer fabricating method and silicon single crystal wafer At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation...	05/23/2006
6961516	Steam generator and mixer using the same A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam st...	11/01/2005
6936490	Semiconductor wafer and its manufacturing method A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a...	08/30/2005
6933254	Plasma-resistant articles and production method thereof A plasma-resistant article is provided in which a surface region of the article to be exposed to plasma in a corrosive atmosphere is formed from a zirconia-based ceramic that contains yttria in an amount of 7 to 17 mol %. The plasma-resistant article exhibits a suff...	08/23/2005
6885814	Carbon wire heating object sealing heater and fluid heating apparatus using the same heater A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or ...	04/26/2005
6861122	Ceramic member with fine protrusions on surface and method of producing the same The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base materia...	03/01/2005
6841273	Silicon/silicon carbide composite and process for manufacturing the same The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such...	01/11/2005
6838405	Plasma-resistant member for semiconductor manufacturing apparatus and method for manufacturing the same A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 μm from surface in a p...	01/04/2005
6834613	Plasma-resistant member and plasma treatment apparatus using the same A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 μm, a surface roughness Ra of 0.8-3.0 μm and a bulk density of 3.90 g/cm3 or over.	12/28/2004
6821916	Ceramics for in vivo use The invention is intended to introduce cells easily into a ceramics for in vivo use. Also, the invention provides a ceramics for in vivo use which has a good affinity to a living body and no harmful action on a living body. The invention relates to a porous ceramics...	11/23/2004
6734960	Wafer defect measuring method and apparatus The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor...	05/11/2004
6713420	Porous ceramics body for in vivo or in vitro use A porous ceramics body for in vivo or in vitro 1use in which a number of pores are closely distributed in three dimensional directions, adjoining pores thereof being partitioned by wall portions with respective communication ports to bring said adjoining pores into ...	03/30/2004
6699401	Method for manufacturing Si-SiC member for semiconductor heat treatment A method for producing a Si--SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is pr...	03/02/2004
6668662	Viscoelasticity measuring device The invention provides a viscoelasticity measuring device which is capable of imparting a desired displacement profile to a sample under conditions close to that of actual use. The viscoelasticity measuring device is composed of a presser to impart displa...	12/30/2003
6652934	Silica glass crucible and method of fabricating thereof A silica glass crucible 1 having ଱ of 0.05 or less over a thickness of 0.5 mm or more from the inner surface of the silica glass crucible, ଱ being obtained by dividing the fluorescent intensity integrated over a wavelength range of 4,000 cm	11/25/2003
6637629	Immersion nozzle The invention presents an immersion nozzle having corrosion resistance to steel of high oxygen content or type of steel treated with calcium, and capable of preventing adheres and deposits of molten steel and oxide inclusions on the nozzle inner wall, in ...	10/28/2003
6584279	Heater sealed with carbon wire heating element A heater sealed with carbon wire heating element has a carbon wire heating element sealed with a quartz glass member, the carbon wire being prepared by knitting carbon single fibers into a knitted cord of a braid, each wire having a crystal structure with...	06/24/2003
6565650	Single crystal pulling apparatus and pulling method A single crystal pulling apparatus comprising, a laser unit 46 emitting a beam with a wavelength of 550 nm or less to form a spot on the surface of said melt, a spot camera 47 capturing the spot to produce electrical image signals corresponding thereto, a...	05/20/2003
6517422	Polishing apparatus and method thereof A polishing apparatus which attaches the semi-conductor wafers 5 to the polishing plate 4 for performing the polishing as applying pressure the polishing cloth with the semi-conductor wafers, is provided with a guide ring 7 disposed outside of the polishi...	02/11/2003
6517632	Method of fabricating a single crystal ingot and method of fabricating a silicon wafer A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused ...	02/11/2003
6516143	Fluid heating apparatus The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater sec...	02/04/2003
6515264	Heater A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; ...	02/04/2003
6515297	CVD-SiC self-supporting membrane structure and method for manufacturing the same The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=ଲ(220)/ଲ(111) of ଲ (220) peak to ଲ (...	02/04/2003
6492042	Ceramics material and producing the same The invention is a method of producing a ceramics material comprising the steps of: preparing a raw powder in which alumina particles having an average particle diameter of 0.1-1.0 μare doped with at least magnesia of 0.01-1 weight % and a solution conta...	12/10/2002
6485573	Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the r...	11/26/2002

«First «Previous1 2 3 4 5 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Assignee: Toshiba Ceramics Co., Ltd.