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Assignee: Tohoku Techno Arch Co., Ltd.


Location: JP
No. of patents: 20

NumberTitleIssue Date
7803347Organically modified fine particles
A technique for bonding an organic group with the surface of fine particles such as nanoparticles through strong linkage is provided, whereas such fine particles are attracting attention as materials essential for development of high-tech products because of various...
09/28/2010
7094493Hydrogen storage metal alloy, method for absorption and release of hydrogen using the said alloy and hydrogen fuel battery using the said method
A method for absorbing and releasing hydrogen comprises applying repeatedly hydrogen pressurization and depressurization to a hydrogen storage metal alloy of a body-centered cubic structure-type phase exerting a two-stage or inclined plateau characteristic in a hydr...
08/22/2006
7538936Pulse laser beam generating device
To induce a targeted non-linear optical effect by a high-peak-power light by using a light pulse from a semiconductor laser without using a light pulse from a large, high-average-power solid laser such as titanium sapphire laser. A semiconductor laser pulse beam wit...
05/26/2009
7520956On-wafer monitoring system
An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power s...
04/21/2009
7479188Process for producing GaN substrate
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer whi...
01/20/2009
7335296System and device for processing supercritical and subcritical fluid
A system for processing supercritical and subcritical fluid capable of bringing the inside of at least one processing container (1) formed in a flow passage into a supercritical or subcritical high pressure field, wherein thermal operation is applied to proce...
02/26/2008
7309995Noncontact conductivity measuring instrument
The present invention relates to measurement of conductivity. A microwave oscillated by an oscillator using a Gunn diode is applied through an isolator, a circulator, and a horn antenna to a silicon wafer. The isolator is used for reducing the standing wave influenc...
12/18/2007
7241608Cat kidney disease marker
In view of the increase in the number of cases with nephropathy in aged animals of the cat family, the invention provides a marker for early diagnosis of feline nephropathy which can substitute for the conventional complicated methods of diagnosing nephropathy such ...
07/10/2007
7123004Method of non-destructive inspection of rear surface flaws and material characteristics using electromagnetic technique and apparatus therefor
The non-destructive inspection method, wherein the non-destructive inspection method supplies currents to a conductive inspection subject and evaluates the rear surface flaw and the embedded flaw of these the inspection subject, or the material characteristic using ...
10/17/2006
7054190Logic-in-memory circuit using magnetoresistive element
A TMR network 120 using TMR elements as magnetoresistive elements is formed as a variable resistive element network by a series-parallel connection of two kinds of variable resistive elements R with resistance values that change according to an external input...
05/30/2006
7026151Cat kidney disease marker
In view of the increase in the number of cases with nephropathy in aged animals of the cat family, the invention provides a marker for early diagnosis of feline nephropathy which can substitute for the conventional complicated methods of diagnosing nephropathy such ...
04/11/2006
6964324Damper with magnetic fluid
A damper in which magnetic particles are discouraged from settling irrespective of the kind of a magnetic fluid is provided. A damper is constituted of a vessel in which the magnetic fluid is accommodated and a slider (piston). As the piston, one that is made of a l...
11/15/2005
6936188Zinc oxide semiconductor material
A zinc oxide semiconductor material comprising at least zinc and oxygen as constituent elements, which can be deterred with respect to the deterioration of doping characteristic, luminous characteristic and the like, compared with a conventional c-axial oriented one...
08/30/2005
6893532Method and apparatus for processing fine particle dust in plasma
An apparatus for processing particulate dust when a substrate is arranged in a high vacuum enclosure, plasma is generated in the high vacuum enclosure, and a reactive material is introduced into the high vacuum enclosure to perform processing of the substrate. At le...
05/17/2005
6879167Noncontact measuring system for electrical conductivity
The invention provides a noncontact measuring system for electrical conductivity, which uses a microwave. In the measuring system for electrical conductivity, the microwave generated in a network analyzer (NA) 110 is guided to a surface of a silicon wafer (sa...
04/12/2005
6860937Method for preparing zinc oxide semi-conductor material
A method for preparing zinc oxide semiconductor material in which an organometallic compound containing zinc as a metal composition is introduced into a reaction chamber and the zinc-containing organic compound is vaporized to effect a specific decomposition reactio...
03/01/2005
6838308Semiconductor polysilicon component and method of manufacture thereof
On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide ...
01/04/2005
6835490Alloy for hydrogen storage, method for absorption and release of hydrogen using the alloy, and hydrogen fuel cell using the method
A method for absorbing and releasing hydrogen comprises applying repeatedly hydrogen pressurization and depressurization to a hydrogen storage metal alloy of a body-centered cubic structure-type phase exerting a two-stage or inclined plateau characteristic in a hydr...
12/28/2004
6589362Zinc oxide semiconductor member formed on silicon substrate
The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen fluoride (HF) diluted with pure water to 10% (process(1)). The ...
07/08/2003
 
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