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| Number | Title | Issue Date |
| 7515282 | Modeling and measuring structures with spatially varying properties in optical metrology The profile of a structure having a region with a spatially varying property is modeled using an optical metrology model. A set of profile parameters is defined for the optical metrology model to characterize the profile of the structure. A set of layers is defined ... | 04/07/2009 |
| 7505153 | Model and parameter selection for optical metrology A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters... | 03/17/2009 |
| 7474993 | Selection of wavelengths for integrated circuit optical metrology Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the ter... | 01/06/2009 |
| 7474420 | In-die optical metrology To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffra... | 01/06/2009 |
| 7467064 | Transforming metrology data from a semiconductor treatment system using multivariate analysis Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables f... | 12/16/2008 |
| 7453584 | Examining a structure formed on a semiconductor wafer using machine learning systems A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured from the structure using an optical metrology device. A first profile is obtained from a first machine learning system using the first diffraction signal obtaine... | 11/18/2008 |
| 7450232 | Generic interface for an optical metrology system An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction si... | 11/11/2008 |
| 7444196 | Optimized characterization of wafers structures for optical metrology A patterned structure in a wafer is created using one or more fabrication treatment processes. The patterned structure has a treated and an untreated portion. One or more diffraction sensitivity enhancement techniques are applied to the structure, the one or more di... | 10/28/2008 |
| 7440881 | Adaptive correlation of pattern resist structures using optical metrology A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted accord... | 10/21/2008 |
| 7428060 | Optimization of diffraction order selection for two-dimensional structures The number of diffraction orders to use in generating simulated diffraction signals for a two-dimensional structure in optical metrology is selected by generating a first simulated diffraction signal using a first number of diffraction orders and a hypothetical prof... | 09/23/2008 |
| 7427521 | Generating simulated diffraction signals for two-dimensional structures One or more simulated diffraction signals for use in determining the profile of a structure formed on a semiconductor wafer can be generated, where the profile varies in more than one dimension. Intermediate calculations are generated for variations in a hypothetica... | 09/23/2008 |
| 7421414 | Split machine learning systems Split machine learning systems can be used to generate an output for an input. When the input is received, a determination is made as to whether the input is within a first, second, or third range of values. If the input is within the first range, the output is gene... | 09/02/2008 |
| 7414733 | Azimuthal scanning of a structure formed on a semiconductor wafer A structure formed on a semiconductor wafer is examined by obtaining measurements of cross polarization components of diffraction beams, which were obtained from scanning an incident beam over a range of azimuth angles to obtain an azimuthal scan. A zero azimuth pos... | 08/19/2008 |
| 7395132 | Optical metrology model optimization for process control To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile m... | 07/01/2008 |
| 7394554 | Selecting a hypothetical profile to use in optical metrology A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measu... | 07/01/2008 |
| 7388677 | Optical metrology optimization for repetitive structures The top-view profiles of repeating structures in a wafer are characterized and parameters to represent variations in the top-view profile of the repeating structures are selected. An optical metrology model is developed that includes the selected top-view profile pa... | 06/17/2008 |
| 7379192 | Optical metrology of single features The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatu... | 05/27/2008 |
| 7355728 | Optical metrology model optimization for repetitive structures An optical metrology model for a repetitive structure is optimized by selecting one or more profile parameters using one or more selection criteria. One or more termination criteria are set, the one or more termination criteria comprising measures of stability of th... | 04/08/2008 |
| 7330279 | Model and parameter selection for optical metrology A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or... | 02/12/2008 |
| 7302367 | Library accuracy enhancement and evaluation The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least... | 11/27/2007 |
| 7280229 | Examining a structure formed on a semiconductor wafer using machine learning systems A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured from the structure using an optical metrology device. A first profile is obtained from a first machine learning system using the first diffraction signal obtaine... | 10/09/2007 |
| 7277189 | Generation of a library of periodic grating diffraction signals A method of generating a library of simulated-differentiation signals (simulated signals of a periodic grating includes obtaining a measured-diffraction signal (measured signal). Hypothetical parameters are associated with a hypothetical profile. The hypothetical pa... | 10/02/2007 |
| 7274472 | Resolution enhanced optical metrology A resolution enhanced optical metrology system to examine a structure formed on a semiconductor wafer includes a source configured to direct an incident beam at the structure through a coupling element. The coupling element is disposed between the source and the str... | 09/25/2007 |
| 7274465 | Optical metrology of a structure formed on a semiconductor wafer using optical pulses A structure formed on a wafer can be examined by directing an incident pulse at the structure, the incident pulse being a sub-picosecond optical pulse. A diffraction pulse resulting from the incident pulse diffracting from the structure is measured. A characteristic... | 09/25/2007 |
| 7271902 | Generic interface for an optical metrology system An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction si... | 09/18/2007 |
| 7224471 | Azimuthal scanning of a structure formed on a semiconductor wafer A structure formed on a semiconductor wafer is examined by directing an incident beam at the structure at an incidence angle and a azimuth angle. The incident beam is scanned over a range of azimuth angles to obtain an azimuthal scan. The cross polarization componen... | 05/29/2007 |
| 7216045 | Selection of wavelengths for integrated circuit optical metrology Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the ter... | 05/08/2007 |
| 7171284 | Optical metrology model optimization based on goals The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology... | 01/30/2007 |
| 7136796 | Generation and use of integrated circuit profile-based simulation information An exemplary method and system for generating integrated circuit (IC) simulation information regarding the effect of design and fabrication process decisionn includes creating and using a data store of profile-based information comprising metrology signal, structure... | 11/14/2006 |
| 7126700 | Parametric optimization of optical metrology model The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match wi... | 10/24/2006 |
| 7092110 | Optimized model and parameter selection for optical metrology A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a... | 08/15/2006 |
| 7072049 | Model optimization for structures with additional materials A wafer structure profile is modeled by determining one or more termination criteria. A determination is made as to whether a wafer structure includes at least one layer having three or more materials alone a line within the at least one layer. An optical metrology ... | 07/04/2006 |
| 7064829 | Generic interface for an optical metrology system An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction si... | 06/20/2006 |
| 7065423 | Optical metrology model optimization for process control To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology... | 06/20/2006 |
| 7046375 | Edge roughness measurement in optical metrology Edge roughness and deterministic profile of a structure formed on a semiconductor wafer are measured using optical metrology by directing an incident beam on the structure using a source and receiving the diffracted beam from the structure using a detector. The rece... | 05/16/2006 |
| 7041515 | Balancing planarization of layers and the effect of underlying structure on the metrology signal The present invention includes a method and system for identifying an underlying structure that achieves improved planarization characteristics of layers while minimizing introduction of random and/or systematic noise to the reflected metrology signal. One em... | 05/09/2006 |
| 7031894 | Generating a library of simulated-diffraction signals and hypothetical profiles of periodic gratings A library of simulated-diffraction signals and hypothetical profiles of a periodic grating can be generated by generating diffraction calculations for a plurality of blocks of hypothetical layers. A diffraction calculation for a block of hypothetical layers characte... | 04/18/2006 |
| 7030999 | Optical metrology of single features The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatu... | 04/18/2006 |
| 6961679 | Method and system of dynamic learning through a regression-based library generation process The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to d... | 11/01/2005 |
| 6952271 | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses A library of simulated-diffraction signals for an integrated circuit periodic grating is generated by generating sets of intermediate layer data. Each set of intermediate layer data corresponding to a separate one of a plurality of hypothetical layers of a hypotheti... | 10/04/2005 |
