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Assignee: Thomson-CSF Semiconducteurs Specifiques


Location: Paris, FR
No. of patents: 19

NumberTitleIssue Date
6091092Driving-gate charge-coupled device
The invention relates to a charge-coupled device. Such devices comprise at least one insulated conducting gate (3) connecting two semiconductor zones. According to the invention, each insulated conducting gate (3) has a width progressively increasing from...
07/18/2000
5946034CCD register read amplifier
A charge/voltage conversion device of a CCD type charge transfer read register comprises a read diode and a read amplifier, wherein the read amplifier comprises a first amplification stage enabling the conversion, into current variations (ƊI), of the vol...
08/31/1999
5786712Fast differential sample-and-hold circuit
A fast differential sample-and-hold circuit includes two transistors controlled so as to be turned on or off. The output signal of the circuit is recovered at the terminals of an output capacitor connecting the emitters of the two transistors. The sample-...
07/28/1998
5751059Pyroelectric sensor
The invention relates to components such as pyroelectric sensors which are particularly sensitive to piezoelectric effects and which, consequently, are disturbed by the mechanical deformations or the vibrations which the component may experience. In order...
05/12/1998
5715002Multiple output CCD type charge transfer read register
A CCD type charge-transfer photosensitive device (Z1) comprises a photosensitive zone (Z2) formed by at least one line of pixels and designed for the conversion, into electrical charges, of the photons coming from an image and a non-photosensitive zone de...
02/03/1998
5698886Protection circuit against electrostatic discharges
A protection circuit against the electrostatic discharges that could appear at the terminals of a circuit, wherein said protection circuit comprises a first transistor made in a well whose potential is a floating potential and enabling the value of the di...
12/16/1997
5656806Circuit to eliminate the dark current of a photodetector
Disclosed is a photodetector comprising at least one photosensitive diode and at least one read circuit enabling the charges generated by photoelectric effect in said diode to be converted into a voltage information element sampled by a switch, wherein sa...
08/12/1997
5570313Memory insensitive to disturbances
The invention concerns a memory cell insensitive to disturbances. The memory cell, that contains information in the form of two complementary logical levels (X, C(X)), each logical level being stored in a node of the cell (N1, N2), is characterized in tha...
10/29/1996
5570387Two-stage power laser
The disclosure is a high-power solid laser in which an emissive array of semiconductor lasers in a first stage pumps a solid YAG-type laser in a second stage. The structure of the emissive array, which is an integrated circuit, includes rods of semiconduc...
10/29/1996
5530404Variable gain amplifier having n parallel-connected elementary amplifiers
A variable gain amplifier which has n parallel-connected elementary amplifiers, and components for selecting j-order (j=1, 2, . . . , n) elementary amplifier according to the desired gain. Each elementary amplifier is of a common base type. The variable g...
06/25/1996
5508646Controlled feedback charge-to-voltage converter
The invention concerns a charge-to-voltage converter including a read diode and a read transistor of no-load gain Go. The converter includes complementary circuits assuring a conversion gain greater than Go during read periods and a ...
04/16/1996
5506807Memory circuit with redundancy
A novel redundancy architecture for an integrated-circuit memory is utilized having no redundancy columns separate from the useful columns but with each useful column, except for the first column, serving as a redundancy column for any adjacent defective ...
04/09/1996
5471210Analog digital converter
The invention concerns precision analogue-digital converters. For the fine conversion, supplying the low order bits (B0 to Bk) for an analogue voltage Vin to be converted, three ordinary differential amplifiers (ADA, ADB, ADC) are used connected to three ...
11/28/1995
5469485Frequency divider
A frequency divider, constituted by N divide-by-two binaries, comprises logic circuits that enable the generation of a signal of the end of the frequency division by means of the change in state of the most significant bit generated by the Nth order divid...
11/21/1995
5446283Thermal image detector provided with means to eliminate fixed pattern noise
A thermal image detector and, more particularly, linear or matrix pyroelectric detectors. These detectors work differentially in successive phases of illumination and masking via a shutter that is synchronized with signal processing circuits. The detector...
08/29/1995
5444447Analog-digital converter with distributed sample-and-hold circuit
The disclosure relates to analog-digital converters. It is sought to limit the power consumption and obtain a better compromise among the different performance characteristics of the computer. In a general structure of a converter there are, firstly, a co...
08/22/1995
5432348Thermal image detector with fast shutter period, and method of operation
The disclosure relates to thermal image detectors and, more particularly, to linear or matrix type pyroelectic detectors. These detectors work differentially, in successive phases of masking and illumination, by use of a shutter that is synchronized with ...
07/11/1995
5422503CCD shift register with improved reading device
A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the e...
06/06/1995
5418449Device for the detection of power at the output of an electronic circuit
The disclosure relates to the servo-control of an electronic circuit that calls for the detection of the power delivered at its output. The disclosed device is essentially constituted by a field-effect transistor with zero bias VDS mounted betw...
05/23/1995
 
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