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Assignee: Tekcore Co., Ltd.


Location: Nantou, TW
No. of patents: 10

NumberTitleIssue Date
8101447Light emitting diode element and method for fabricating the same
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxia...
01/24/2012
D647494Light-emitting diode
10/25/2011
D647493Light-emitting diode
10/25/2011
7977254Method of forming a gate insulator in group III-V nitride semiconductor devices
A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer ...
07/12/2011
7901963Surface roughening method for light emitting diode substrate
The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones o...
03/08/2011
7799593Light emitting diode structure and method for fabricating the same
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zone...
09/21/2010
7713769Method for fabricating light emitting diode structure having irregular serrations
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form...
05/11/2010
7645624Method for self bonding epitaxy
A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom sur...
01/12/2010
7598105Light emitting diode structure and method for fabricating the same
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zone...
10/06/2009
7579202Method for fabricating light emitting diode element
The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have...
08/25/2009
 
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