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| Number | Title | Issue Date |
| 4737235 | Process for polysilicon with freon 11 and another gas A process for etching polysilicon is provided wherein CFCl3 (Freon 11) and another gas, typically SF6, is pre-mixed in a storage chamber before routing to an etching chamber. This process prevents condensation of the Freon 11 in a ro... | 04/12/1988 |
| 4727993 | Wafer cassette having multi-directional access A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. A passthrough cassette comprising inwardly extending arms having a stepped portion thereon for ... | 03/01/1988 |
| 4724510 | Electrostatic wafer clamp A wafer clamp is disclosed in which a high voltage capacitor is formed on a semiconductor wafer, which rests on a conductive support. The plates of the capacitor comprise a plurality of concentric rings formed on the surface of the wafer with alternate ri... | 02/09/1988 |
| 4720628 | Optical process for determining the endpoint of a process via analog multiplication of photocell signals An improved optical endpoint detector is disclosed in which two photocells are used in conjunction with analog multipliers and variable voltage sources, all under microprocessor control. The combination enables one to measure the ratio of intensity of dif... | 01/19/1988 |
| 4697089 | Dual wavelength sensor which employs object as part of a corner reflector Two emitters, producing light at different wavelengths, and a single receiver provide an optical sensor useful for detecting the presence or position of objects having surfaces which do not totally reflect incident light.... | 09/29/1987 |
| 4687543 | Selective plasma etching during formation of integrated circuitry A method is disclosed for removing (etching) an insulating layer form an electrically semiconductive material wherein a volatile fluoride is substituted for a hydrocarbon in gases for selective plasma discharges. The removing is done without polymer build... | 08/18/1987 |
| 4678540 | Plasma etch process In an aluminum etch process using SiCl4 in a plasma reactor, edge profile is controlled by adding predetermined amounts of nitrogen and chlorine. The resulting aniosotropic etch causes walls to have a 60°-90° angle with respect to the substra... | 07/07/1987 |
| 4632624 | Vacuum load lock apparatus A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. Upper and lower bell jars, which seal to a sealing plate, provide access to the cassette by out... | 12/30/1986 |
| 4624728 | Pin lift plasma processing A wafer is supported on pins within a plasma reactor, allowing the plasma to act on both sides of the wafer. Various processes are disclosed for pins-up and pins-down condition. If conductive pins are used, they are preferably flattened. The wafer is pref... | 11/25/1986 |
| 4619573 | Article transport apparatus Wafer transport in the vacuum portion of an automated wafer processing machine is accomplished by means of an improved transport mechanism. The primary transport device is a rail guided, magnetically driven shuttle plate. Baffles serve to isolate the part... | 10/28/1986 |
| 4614639 | Compound flow plasma reactor A plasma reactor is described in which radially outward and radially inward gas flows are adjusted to maintain uniformity for different wafer sizes and to compensate for loading effects. Inlet ports are provided about the sides of a reactor chamber and at... | 09/30/1986 |
| 4611919 | Process monitor and method thereof A process monitor which is particularly useful for endpoint detection in plasma etching processes does not require the dedication of a test area on the wafer for endpoint detection and also obviates the need for wafer alignment. An improved optical window... | 09/16/1986 |
| 4590042 | Plasma reactor having slotted manifold A plasma reactor apparatus is disclosed in which plates having channels are used to redistribute gas uniformly over the surface of a wafer being processed in the reactor. Slot means adjacent the plates provide a final baffle to prevent jetstreams in the g... | 05/20/1986 |
| 4585920 | Plasma reactor removable insert An improved plasma reaction chamber is described in which the interior electrode is readily removed. The interior electrode may comprise a variety of materials, including metallized plastic, thus enabling a disposable electrode and a greater variety of pl... | 04/29/1986 |
| 4585516 | Variable duty cycle, multiple frequency, plasma reactor A plasma reactor and a process for operating a plasma reactor are disclosed. The reactor comprises parallel plates in which one plate is connected to a source of high frequency signal and a second plate is connected to a source of low frequency signal. Co... | 04/29/1986 |
| 4579618 | Plasma reactor apparatus Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive f... | 04/01/1986 |
| 4575714 | Module presence sensor In a processing system comprising a plurality of modules, the presence of one or more modules is sensed at a control unit through the use of an analog encoder and an A/D converter. The modules terminate selected resistors in a binary resistance network in... | 03/11/1986 |
| 4547247 | Plasma reactor chuck assembly A plasma reactor of the single wafer, planar electrode type achieves improved serviceability by means of a service seal arrangement. The lower electrode of the plasma reactor is carried on a chuck. Both the chuck and the upper portions of the reactor seal... | 10/15/1985 |
| 4547248 | Automatic shutoff valve A plasma reactor system is described in which modularity is enhanced through automatic shutoff valves for gas lines, enabling components to be exchanged readily. Gas lines are routed through a connector at a predetermined location for all modules. The con... | 10/15/1985 |
| 4539062 | Modular plasma reactor with local atmosphere A plasma reactor system is described in which a plurality of components are segregated into modules. Devices known as mass flow controllers for gas supply lines are located one each per module. A plenum for inert gas is connected to each module to bath th... | 09/03/1985 |
| 4357195 | Apparatus for controlling a plasma reaction An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector change... | 11/02/1982 |
| 4321232 | Package and sterilizing process for same A sterilizable package in which a porous envelope containing the article to be sterilized is subjected to a plasma, said plasma being generated outside of said envelope with the reactive components of the plasma passing through said porous envelope, there... | 03/23/1982 |
| 4209357 | Plasma reactor apparatus A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as ... | 06/24/1980 |
