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...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
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| Number | Title | Issue Date |
| 7867905 | System and method for semiconductor processing Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid ... | 01/11/2011 |
| 7678705 | Plasma semiconductor processing system and method An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber; and a helical ribbon electrode coupled to the output of the plasma generator. ... | 03/16/2010 |
| 7645618 | Dry etch stop process for eliminating electrical shorting in MRAM device structures The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to elimi... | 01/12/2010 |
| 7467598 | System for, and method of, etching a surface on a wafer First and second electrodes at opposite ends and magnets between the electrodes define an enclosure. Inert gas (e.g. argon) molecules pass into the enclosure through an opening near the first electrode and from the enclosure through an opening near the second electr... | 12/23/2008 |
| 7442615 | Semiconductor processing system and method Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid ... | 10/28/2008 |
| 7439188 | Reactor with heated and textured electrodes and surfaces A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flak... | 10/21/2008 |
| 7425224 | High pressure chemical vapor trapping method A high pressure trapping system is provided to collect chemical vapor by-products in successive stages through chemical reasons conducted at progressively colder temperatures. A hot trap receives chemical vapor exhaust and collects a first waste, typically a solid, ... | 09/16/2008 |
| 7361387 | Plasma enhanced pulsed layer deposition A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing pl... | 04/22/2008 |
| 7270729 | System for, and method of, etching a surface on a wafer First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to... | 09/18/2007 |
| 7235484 | Nanolayer thick film processing system and method A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness... | 06/26/2007 |
| 7223699 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequen... | 05/29/2007 |
| 7208396 | Permanent adherence of the back end of a wafer to an electrical component or sub-assembly A plurality of successive layers are firmly adhered to one another and to a wafer surface and an electrical component or sub-assembly even when the wafer surface is not even and the layers are bent. The wafer surface is initially cleaned by an ion bombardment of an ... | 04/24/2007 |
| 7179350 | Reactive sputtering of silicon nitride films by RF supported DC magnetron An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from t... | 02/20/2007 |
| 7169623 | System and method for processing a wafer including stop-on-aluminum processing Magnetic tunnel junction (MTJ) devices can be fabricated by a stop-on-alumina process whereby the tunnel junction layer serves as the stop layer during plasma overetching of the upper magnetic layer. The resulting side walls of the MTJ device are non-vertical in the... | 01/30/2007 |
| 7163721 | Method to plasma deposit on organic polymer dielectric film A method for protecting an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides the deposition of a protective continuous layer using organic polymer damage-fr... | 01/16/2007 |
| 7153542 | Assembly line processing method An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different proces... | 12/26/2006 |
| 7115169 | Replaceable shielding apparatus A replaceable shielding apparatus provides a cost effective way of shielding a portion of a workpiece during processing. The apparatus includes a replaceable shield, made of comparable weight as the workpiece for allowing replacement of the shield in the same way as... | 10/03/2006 |
| 7087522 | Multilayer copper structure for improving adhesion property A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved ad... | 08/08/2006 |
| 7074278 | Removable lid and floating pivot A semiconductor processing system includes a chamber adapted to process a wafer, the chamber having an opening to facilitate access to the interior of the chamber. The system has a lid coupled to the chamber opening, the lid having an open position and a closed posi... | 07/11/2006 |
| 7049549 | Multi-thermal zone shielding apparatus A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding t... | 05/23/2006 |
| 6998097 | High pressure chemical vapor trapping system A high pressure trapping system is provided to collect chemical vapor by-products in successive stages through chemical reactions conducted at progressively colder temperatures. A hot trap receives chemical vapor exhaust and collects a first waste, typically a solid... | 02/14/2006 |
| 6958295 | Method for using a hard mask for critical dimension growth containment A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further include... | 10/25/2005 |
| 6921555 | Method and system for sequential processing in a two-compartment chamber An apparatus and method for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from a first compartment to a second compartment by rotating the workpiece on a workpiece mover through an int... | 07/26/2005 |
| 6919101 | Method to deposit an impermeable film on porous low-k dielectric film A method for improving the adhesion of an impermeable film on a porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped molecu... | 07/19/2005 |
| 6905969 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequen... | 06/14/2005 |
| 6858085 | Two-compartment chamber for sequential processing An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors that seal the pathway between t... | 02/22/2005 |
| 6859262 | Redistributing radiation guide A system delivers radiation to a substrate with a radiation source to generate radiation having a source intensity distribution pattern; and a redistribution radiation guide adapted to receive the radiation from the radiation source and to direct the radiation from ... | 02/22/2005 |
| 6844527 | Multi-thermal zone shielding apparatus A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintai... | 01/18/2005 |
| 6830664 | Cluster tool with a hollow cathode array A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality o... | 12/14/2004 |
| 6800254 | Visual indicator cold trapping system A visual indicator cold trapping system is provided to allows the visual inspection of the adequacy of a cold trap. The cold trapping system includes a hollow transparent connector operatively connected to the input of the cold trap whereby a visual indication of ma... | 10/05/2004 |
| 6774046 | Method for minimizing the critical dimension growth of a feature on a semiconductor wafer A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor 20 and controlling the temperature of the wafer 26 by controlling the pressure of the gas contacting the back... | 08/10/2004 |
| 6756318 | Nanolayer thick film processing system and method A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness... | 06/29/2004 |
| 6620335 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 09/16/2003 |
| 6521081 | Deposition shield for a plasma reactor A rotary transformer includes a resonant circuit and a coil drive circuit. The resonant circuit includes a resonating capacitor connected to a power MOS transistor, coupled across the primary coil of the transformer. The coil drive circuit includes a diod... | 02/18/2003 |
| 6500314 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 12/31/2002 |
| 6492280 | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls A method and apparatus provide for etching a semiconductor wafer using a two step physical etching and a chemical etching process in order to create vertical sidewalls required for high density DRAMs and FRAMs.... | 12/10/2002 |
| 6486069 | Cobalt silicide etch process and apparatus Method and apparatus for etching a silicide stack including etching the silicide layer at a temperature elevated from that used to etch the rest of the layers in order to accomplish anisotropic etch.... | 11/26/2002 |
| 6410448 | Plasma etch reactor and method for emerging films A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located betwe... | 06/25/2002 |
| 6406925 | Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing A method and apparatus for minimizing or eliminating arcing or dielectric breakdown across a wafer during a semiconductor wafer processing step includes controlling the voltage across the wafer so that arcing and/or dielectric breakdown does not occur. Us... | 06/18/2002 |
| 6391148 | Cobalt silicide etch process and apparatus Method and apparatus for etching a silicide stack including etching the silicide layer at a temperature elevated from that used to etch the rest of the layers in order to accomplish anisotropic etch.... | 05/21/2002 |
