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| Number | Title | Issue Date |
| 7670435 | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth z... | 03/02/2010 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
| 6936357 | Bulk GaN and ALGaN single crystals Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bu... | 08/30/2005 |
| 6890809 | Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on... | 05/10/2005 |
| 6706119 | Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth z... | 03/16/2004 |
