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| Number | Title | Issue Date |
| 7680556 | Method for data collection during manufacturing processes The present invention discloses a new data collection method employed by a middle layer between the host and the equipment, which improves the speed and consistency of data collection. The middle layer incorporated with the proposed data collection method functions ... | 03/16/2010 |
| 7407871 | Method for passivation of plasma etch defects in DRAM devices A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously influence data retention time, has been developed. A high density plasma ... | 08/05/2008 |
| 7363098 | Method to identify machines causing excursion in semiconductor manufacturing The present invention discloses a method that recognizes and uses the grouping patterns of process material by different machines at different process steps to identify potential problem machines causing the excursion in semiconductor manufacturing. The excursion co... | 04/22/2008 |
| 7248975 | Real time monitoring of particulate contamination in a wafer processing chamber An apparatus and method for use is described which permits real time monitoring of build-up of particulate contamination in a wafer processing chamber. The apparatus is capable of monitoring particle build up in regions of a processing chamber which are not accessib... | 07/24/2007 |
| 7163435 | Real time monitoring of CMP pad conditioning process CMP pad conditioning processes have been monitored and controlled by detecting the vibrational spectrum of a sensor mounted on the conditioner support arm. An accelerometer is used as the detector so that vibrational velocity (which correlates with pad wear) can be ... | 01/16/2007 |
| 7121927 | Retaining ring structure for edge control during chemical-mechanical polishing An improved design for a retaining ring for a chemical mechanical poling machine is described which provides superior flexibility and instantaneous in-situ control of the polishing rate in the edge region of a wafer. The design has a plurality of straight slurry del... | 10/17/2006 |
| 7029933 | Method for monitoring ion implant doses Both the sensitivity and the reproducibility of processes for measuring low density ion implant doses near a semiconductor surface have been improved by first forming a thermal oxide layer on the surface and then adjusting the implant profile so that it peaks at the... | 04/18/2006 |
