Assignee: Taiwan Semiconductor Mfg Co Ltd

Location: Hsinchu, TW
No. of patents: 4

Number	Title	Issue Date
7421383	Method for extracting and modeling semiconductor device series resistance and for simulating a semiconductor device with use thereof Semiconductor device junction simulation is carried out utilizing models that are developed with series resistance extractions that improve their fidelity particularly in the high current regions of device operation. The models may also be tailored to account for ge...	09/02/2008
7396432	Composite shadow ring assembled with dowel pins and method of using A composite shadow ring that is constructed of an upper ring and a lower ring assembled together by a plurality of dowel pins and a method for using the ring. The upper ring and the lower ring each has a predetermined outside diameter that is substantially the same,...	07/08/2008
7390753	In-situ plasma treatment of advanced resists in fine pattern definition A novel, in-situ plasma treatment method for eliminating or reducing striations caused by standing waves in a photoresist mask, is disclosed. The method includes providing a photoresist mask on a BARC (bottom anti-reflective coating) layer that is deposited on a fea...	06/24/2008
6218244	Method of fabricating transistor A method of manufacturing a DRAM capacitor is described. A silicon substrate structure includes an oxide layer over a substrate and a polysilicon layer over the oxide layer. The polysilicon layer also includes a plug that penetrates the oxide layer. A pat...	04/17/2001

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