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| Number | Title | Issue Date |
| 6004855 | Process for producing a high performance bipolar structure A process for producing a small shallow-depth high-performance bipolar structure having low parasitic capacitance is disclosed wherein an active base region of a P-type material is first defined in a substrate, a portion of which is of N-type material in ... | 12/21/1999 |
| 5455191 | Method of fabricating an ASIC cell having multiple contacts A high density ASIC cell provides customization solely at the polysilicon #2, insulator #3 levels. High density is achieved by permitting a metal #1 trace to traverse an underlying transistor, without requiring space between adjacent transistors to facili... | 10/03/1995 |
| 5381057 | ECL gate having active pull-down transistor The present invention relates to a modified emitter coupled logic circuit which includes a differential logic stage and an emitter-follower output stage. An active pull-down circuit and a constant voltage source are included in the output stage of this ci... | 01/10/1995 |
| 5200924 | Bit line discharge and sense circuit A bit line discharge and sense circuit is provided for use with a static RAM that includes a row and column array of memory cells addressable via first and second bit lines and also a row select line. Each memory cell includes a transistor pair, wherein t... | 04/06/1993 |
| 5188971 | Process for making a self-aligned bipolar sinker structure Bipolar devices on a common substrate are formed in tubs defined by a sinker that is self-aligning with the isolating trench and provides a relatively low vertical resistance contact from a surface contact to the underlying buried layer. In a first embodi... | 02/23/1993 |
| 5105253 | Structure for a substrate tap in a bipolar structure A substrate tap is incorporated in an integrated circuit which comprises a plurality of transistors formed in isolated device regions in a substrate material comprising a layer of N-type material over a layer of P-type material. The isolated device region... | 04/14/1992 |
| 5029129 | High-speed bipolar memory system A switched load diode cell has been developed wherein first and second multi-emitter NPN transistors are provided having bases cross coupled to the other's collectors in typical latch fashion as shown in FIG. 5. A PN diode is provided having an anode coup... | 07/02/1991 |
| 5001538 | Bipolar sinker structure and process for forming same A sinker which is self-aligned with the oxide isolating trench which is used to define the tub in which the complete bipolar device is located. In a preferred approach to the process for forming the sinker of this invention, little additional diffusion of... | 03/19/1991 |
