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Assignee: Supernova Optoelectronics Corporation


Location: Taoyuan County, TW
No. of patents: 5

NumberTitleIssue Date
7772607GaN-series light emitting diode with high light efficiency
A GaN-series light emitting diode with high light efficiency utilizes a p-type semiconductor layer having a textured surface structure. The optical waveguide effect can be interrupted and formation of hexagonal shaped pits defect can be reduced due to the textured s...
08/10/2010
7473570Method for forming epitaxial layers of gallium nitride-based compound semiconductors
The present invention relates to a structure and a manufacturing method of epitaxial layers of gallium nitride-based compound semiconductors with less dislocation densities. Surface treatment is carried out first on the surface of a substrate using reaction precurso...
01/06/2009
7453098Vertical electrode structure of gallium nitride based light emitting diode
A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and furthe...
11/18/2008
7285800Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, t...
10/23/2007
7208752Structure and manufacturing of gallium nitride light emitting diode
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic...
04/24/2007
 
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