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| Number | Title | Issue Date |
| 6599862 | Method for preparing bismuth-based high temperature superconductors The invention provides a method for stably preparing a bismuth-based high temperature superconductor of a Bi-2223 single-phase or a Bi/Pb-2223 single phase, wherein a second phase is not allowed to reside, at a low cost and efficiently. With the method de... | 07/29/2003 |
| 6561412 | Method of joining together superconductors and a superconductor joined member produced by same Methods for implementing production of an oxide superconductor joined member, excellent in electric current transmission performance, without a need of going through particularly complex steps, are provided. When joining together oxide superconductors by ... | 05/13/2003 |
| 6171390 | Method for preparing oxide single crystalline materials There is provided a method for preparing a large and perfect oxide crystal useful for oxide superconductors and laser transmitting elements. In the present method for preparing a large oxide single crystalline material such as superconductive crystals of ... | 01/09/2001 |
| 6063736 | Oxide superconductor of high critical current density There is provided RE-Ba-Cu-O oxide bulk superconductors in which considerably high critical current density is obtained at relatively high temperature. In the present RE-Ba-Cu-O bulk superconductors, RE is a combination of two or more elements selected fr... | 05/16/2000 |
| 5998338 | Method for preparing oxide superconductors There is provided a method for stably preparing rare earth (RE) 123 type oxide superconductors exhibiting outstanding superconductive properties in the atmosphere. In the method for preparing RE 123-type oxide superconductors by melting, cooling and solid... | 12/07/1999 |
| 5310707 | Substrate material for the preparation of oxide superconductors A substrate material for the preparation of an oxide superconductor includes two different rare earth elements A' and A" in the IIIa group, Ga, and 0, the atomic ratio of these elements being expressed as A'1-xA"xGaO3 (where 0 | 05/10/1994 |
