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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 8002610 | Double side polishing method and apparatus To provide a technique for rotating a plurality of carriers 500 between an upper and a lower rotary surface plates to simultaneously polish both surfaces of a plurality of works 400. The work 400 is merged with the carrier 500 outside a p... | 08/23/2011 |
| 7837791 | Silicon single crystal wafer for particle monitor A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepar... | 11/23/2010 |
| 7824493 | Silicon wafer and method for manufacturing the same A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a po... | 11/02/2010 |
| 7740702 | Silicon wafer and method for manufacturing the same A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen... | 06/22/2010 |
| 7686973 | Silicon wafer etching method and apparatus, and impurity analysis method A wafer etching and impurity analysis method is presented in which a wafer is held in a vessel having gas introduction and exhaust ports, a solution including a mixture of hydrofluoric acid and nitric acid alone or together with sulfuric acid is bubbled with a carri... | 03/30/2010 |
| 7678200 | Technique on ozone water for use in cleaning semiconductor substrate An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above ... | 03/16/2010 |
| 7670965 | Production method for silicon wafers and silicon wafer A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so th... | 03/02/2010 |
| 7648409 | Double side polishing method and apparatus A method of polishing the double sides of a plurality of works simultaneously by rotating a plurality of carriers between upper and lower rotating surface plates, comprising the steps of forming the works (400) integrally with the carriers (500) on the... | 01/19/2010 |
| 7601603 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench.... | 10/13/2009 |
| 7589023 | Method of manufacturing semiconductor wafer A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a semiconductor wafer sink rate different in polishing from that of the... | 09/15/2009 |
| 7563319 | Manufacturing method of silicon wafer An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabri... | 07/21/2009 |
| 7521381 | Method for producing silicon wafer and silicon wafer A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so th... | 04/21/2009 |
| 7470326 | Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the ... | 12/30/2008 |
| 7470169 | Method of polishing semiconductor wafers by using double-sided polisher During polishing of the semiconductor wafer by using a double-sided polisher, a larger difference as compared to the prior art is created between a frictional resistance acting on a front surface of a silicon wafer from an upper surface plate side and a frictional r... | 12/30/2008 |
| 7456106 | Method for producing a silicon wafer Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-cryst... | 11/25/2008 |
| 7397110 | High resistance silicon wafer and its manufacturing method A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is i... | 07/08/2008 |
| 7378332 | Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After... | 05/27/2008 |
| 7368011 | Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the ... | 05/06/2008 |
| 7329589 | Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of forming a SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and also includes a step of introducing hydrogen into the interfac... | 02/12/2008 |
| 7329947 | Heat treatment jig for semiconductor substrate When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that... | 02/12/2008 |
| 7294203 | Heat shielding member of silicon single crystal pulling system A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon ... | 11/13/2007 |
| 7288791 | Epitaxial wafer and method for manufacturing method It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film ... | 10/30/2007 |
| 7273647 | Silicon annealed wafer and silicon epitaxial wafer A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 | 09/25/2007 |
| 7264674 | Method for pulling a single crystal An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of chan... | 09/04/2007 |
| 7258739 | Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of g... | 08/21/2007 |
| 7253082 | Pasted SOI substrate, process for producing the same and semiconductor device A plurality of recessed portions having different depths is formed in a surface of the active layer wafer or in a bonding surface of the supporting substrate wafer. Those wafers are bonded to each other with an insulation film interposed therebetween. This allows a ... | 08/07/2007 |
| 7253069 | Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SO... | 08/07/2007 |
| 7244306 | Method for measuring point defect distribution of silicon single crystal ingot A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be sym... | 07/17/2007 |
| 7229496 | Process for producing silicon single crystal layer and silicon single crystal layer A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the tem... | 06/12/2007 |
| 7226571 | High resistivity silicon wafer and method for fabricating the same A high resistivity p type silicon wafer with a resistivity of 100 Ωcm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication process is performed, a p/n type conversion layer due to thermal donor g... | 06/05/2007 |
| 7220308 | Manufacturing method of high resistivity silicon single crystal To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r... | 05/22/2007 |
| 7210925 | Heat treatment jig for silicon semiconductor substrate A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 m... | 05/01/2007 |
| 7208058 | SOI substrate and manufacturing method thereof An active layer wafer having a larger diameter is placed over a stationary supporting substrate wafer having a smaller diameter. A pusher plate is pressed against an orientation flat of the larger wafer to move the wafer substantially in the horizontal direction. In... | 04/24/2007 |
| 7208042 | Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz ... | 04/24/2007 |
| 7198997 | Method for producing semiconductor substrate, method for producing field effect transistor, semiconductor substrate, and field effect transistor In a semiconductor substrate, a field effect transistor, and methods for producing the same, in order to lower threading dislocation density and also to lower surface roughness, a step of repeating, a plurality of times, a process of epitaxially growing a SiGe gradi... | 04/03/2007 |
| 7195669 | Method of producing silicon monocrystal A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal r... | 03/27/2007 |
| 7193724 | Method for measuring thickness of thin film-like material during surface polishing, and surface polishing method and surface polishing apparatus A thickness of a wafer during polishing operation is detected to accurately perform the polishing. A thickness measuring method, which measures the thickness of the wafer of wafer 7 in polishing a surface, comprises the steps of irradiating the thin film-like... | 03/20/2007 |
| 7180138 | SOI structure having a SiGe layer interposed between the silicon and the insulator A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a... | 02/20/2007 |
| 7172656 | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of ... | 02/06/2007 |
| 7163393 | Heat treatment jig for semiconductor silicon substrate This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocat... | 01/16/2007 |
