Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7740285 | Threaded joint for steel pipes A threaded joint for steel pipes comprised of a pin (1) and a box (2) each having a threaded portion (1a, 2b) and an unthreaded contact portion (1b, 2a) exhibits adequate leakage resistance and ga... | 06/22/2010 |
| 6663727 | Steel alloy railway wheels Disclosed is a steel alloy that includes as alloying ingredients carbon, silicon, manganese, aluminum, and oxygen. In accordance with this embodiment of the disclosed invention, carbon is present in an amount ranging from 0.40 to 0.77 wt. %; silicon is pr... | 12/16/2003 |
| 6372057 | Steel alloy railway wheels Disclosed is a steel alloy that includes as alloying ingredients carbon, silicon, manganese, aluminum, and oxygen. In accordance with this embodiment of the disclosed invention, carbon is present in an amount ranging from 0.40 to 0.77 wt. %; silicon is pr... | 04/16/2002 |
| 6338762 | Stainless steel for use in engine gaskets and a method for manufacturing thereof An austenitic stainless steel for use in engine gaskets having a high fatigue strength and resistance to settlement and method of manufacture thereof. The austenitic stainless steel is prepared by cold rolling at least 40%, annealing at a temperature of 7... | 01/15/2002 |
| 6105409 | Method and apparatus for hydroforming metallic tube A method for hydroforming a metallic tube comprising primary hydroforming and secondary hydroforming, wherein in the primary hydroforming step, the metallic tube is formed such that a circumferential length of an expanded portion of the primary-hydroforme... | 08/22/2000 |
| 6074479 | Silicon single crystal wafer annealing method and equipment, and silicon single crystal wafer and manufacturing method related thereto This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including... | 06/13/2000 |
| 6056819 | Method for pulling a single crystal In the pulling of a single crystal, hitherto, it is difficult to reduce the OSF density while the deformation rate is held down within the tolerance, so that it is difficult to improve the quality and productivity. In the present invention, a deviation fr... | 05/02/2000 |
| 5720425 | Method of splicing rolled plates and aparatus for the same The invention provides a method of splicing rolled plates with each other, including the steps of (a) positioning a rear end portion of a leading rolled plate above a front end portion of a following rolled plate by a distance slightly greater than a diam... | 02/24/1998 |
| 5589116 | Process for preparing a silicon carbide sintered body for use in semiconductor equipment A process for the preparation of a silicon carbide sintered body of high purity which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor equipment including the step of shaping a silicon carbide powder, calcining the s... | 12/31/1996 |
| 5158128 | Thermocouple for a continuous casting machine A thermocouple assembly for a continuous casting mold. The assembly includes a hollow body one end of which has external pipe threads whereby the hollow body may be sealingly threaded into a threaded cavity provided in the outer surface area of the mold w... | 10/27/1992 |
| 4825674 | Metallic tubular structure having improved collapse strength and method of producing the same Disclosed is a metallic tubular structure having an improved collapse strength characterized in that the tubular structure has a circumferential residual tensile stress left in the inner peripheral surface thereof, said residual stress ranging between 0 a... | 05/02/1989 |
