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| Number | Title | Issue Date |
| 8183596 | High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitri... | 05/22/2012 |
| 8183509 | Laser processing apparatus and laser processing method The present invention relates to a laser processing apparatus and the like having a structure for implementing at the same time both an efficient laser processing in the place where a laser beam is difficult to reach and a laser processing without damages in the pla... | 05/22/2012 |
| 8183071 | Method for producing nitride semiconductor optical device and epitaxial wafer In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after c... | 05/22/2012 |
| 8175461 | Optical module implemented with tri-plexer optical subassembly An optical module that implements with a tri-plexer assembly is disclosed. The tri-plexer module comprises a bi-directional module for transmitting digital input and output signals and an analogue optical assembly for receiving analog optical signals. The bi-directi... | 05/08/2012 |
| 8175129 | Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode elect... | 05/08/2012 |
| 8174118 | Detection device and method for manufacturing the same A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the lig... | 05/08/2012 |
| 8174035 | Nitride-based semiconductor light emitting device An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting d... | 05/08/2012 |
| 8173458 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well struc... | 05/08/2012 |
| 8167505 | Pluggable system between optical transceiver and host system A mechanism to fix the new type of the pluggable optical transceiver to the host system is disclosed. The optical transceiver provides the screws, while, the host system has the face panel with a port and the rail system between which the optical transceiver is set ... | 05/01/2012 |
| 8155163 | Photonic crystal laser and method of manufacturing photonic crystal laser A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-ty... | 04/10/2012 |
| 8153256 | Soft magnetic material comprising an insulating layer containing aluminum, silicon, phosphorous and oxygen; dust magnetic core; process for producing soft magnetic material; and process for producing dust magnetic core The soft magnetic material includes a plurality of composite magnetic particles having a metal magnetic particle and an insulating film surrounding the surface of the metal magnetic particle. The metal magnetic particle contains iron as the main component. The insul... | 04/10/2012 |
| 8148751 | Group III nitride semiconductor wafer and group III nitride semiconductor device A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor devi... | 04/03/2012 |
| 8148716 | Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary ... | 04/03/2012 |
| 8147949 | Method of manufacturing ceramics molded component and mold employed therefor as well as ceramic component A lower periphery constraint portion and an upper periphery constraint portion for molding the periphery of a lens as well as a mirror-finished optical molding surface and another mirror-finished optical molding surface are formed on a lower mold body and an upper m... | 04/03/2012 |
| 8145061 | Optical module implementing a light-receiving device and a light-transmitting device within a common housing A bi-direction optical module with an arrangement to reduce the crosstalk noise is disclosed. The optical module comprises a laser diode (LD) driven by a differential signal and a photodiode (PD) on a single package. The PD is mounted on a position where the electri... | 03/27/2012 |
| 8144314 | Spectral measurement apparatus and measurement method utilizing Brillouin scattering The present invention relates to a spectral measurement apparatus and measurement method utilizing Brillouin scattering, which judge the state of the temperature or strain of an optical fiber more quickly. The spectral measurement apparatus comprises a light source,... | 03/27/2012 |
| 8139619 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis... | 03/20/2012 |
| 8138504 | Silicon carbide semiconductor device and method of manufacturing the same A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth layer on a 4H—SiC substrate, and an extended terrace surface is formed... | 03/20/2012 |
| 8124430 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well struc... | 02/28/2012 |
| 8123874 | Soft magnetic material, dust core, method for manufacturing soft magnetic material, and method for manufacturing dust core A soft magnetic material, a dust core, a method for manufacturing the soft magnetic material, and a method for manufacturing the dust core that can improve DC bias characteristics are provided. A soft magnetic material includes a plurality of metal magnetic p... | 02/28/2012 |
| 8121484 | Bi-direction optical module installing light-emitting device and light-receiving device in signal package A bi-directional optical module with an improved optical crosstalk between the transmitter unit and the receiver unit is disclosed. The optical module provides the LD, the PD, the WDM filter secured with the block, and the package with the co-axial shape. The block ... | 02/21/2012 |
| 8121161 | Laser diode driver driven in shunt mode by signals complementary to each other A laser driver to drive an LD in the shunt mode and driven with signals complementary to each other is disclosed. The driver includes two FETs of the enhancement and a terminator. Two FETs are connected in parallel with the LD and driven by the complementary signals... | 02/21/2012 |
| 8121160 | Driver circuit for semiconductor laser diode driven in differential mode A driver circuit for a semiconductor laser diode (LD) is disclosed, in which the driver circuit drives the LD in the differential mode and lowers the power consumption thereof. The driver circuit includes a differential unit to provide the modulation current to the ... | 02/21/2012 |
| 8120061 | Light receiving device A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacki... | 02/21/2012 |
| 8116637 | Optical transmitter with a chirp managed laser diode automatically adjusting emission wavelength thereof and its adjusting method An optical transmitter using a chirp managed laser is disclosed. The optical transmitter compares, in advance to the ATC operation, the phases of the signal corresponding to the original output of the LD and the signal corresponding to that reflected by the filter. ... | 02/14/2012 |
| 8112004 | Optical receiver implemented with dual electronic dispersion compensators An optical receiver implemented with two electronic dispersion compensators (EDC) is disclosed. The optical receiver selects one of the EDC in an ordinary operation. Once there shaped signal compensated by the selected EDC is degraded due to irregular conditions of ... | 02/07/2012 |
| 8107507 | Group III nitride semiconductor element and epitaxial wafer A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer hav... | 01/31/2012 |
| 8105857 | Method of fabricating group-III nitride semiconductor laser device A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction... | 01/31/2012 |
| 8104977 | Pluggable transceiver with bi-directional optical sub-assembly An optical transceiver is disclosed, in which the transceiver installs a BOSA and has an additional heat conducting path from the BOSA to the cover and to the base independent of the path from the IC to the cover. The optical transceiver includes a heat conductor th... | 01/31/2012 |
| 8098435 | Optical combiner and image projector using the optical combiner An optical combiner in which the number of parts used is lessened is made of a resin. The optical component comprises a first surface, a diffraction grating, and a second surface. The first surface is a surface providing first, second, and third lenses. The diffract... | 01/17/2012 |
| 8097528 | Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the st... | 01/17/2012 |
| 8081470 | Heat-dissipating mechanism implemented in cage for optical transceiver A mechanism for the heat sink to adhere to the transceiver inserted in the cage is disclosed. The heat sink provides a guide in the side thereof, while, the cage provides a slit in the side. A pair of elastic tabs is diagonally formed in the slit. The transceiver sl... | 12/20/2011 |
| 8081376 | Multi-stage fiber amplifier to suppress Raman scattered light The invention relates to a light source apparatus having a structure for effectively suppressing a negative effect due to a nonlinear effect generated in propagation of an amplifying light, and realizing a stable operation. In the light source apparatus, light ampli... | 12/20/2011 |
| 8076167 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis... | 12/13/2011 |
| 8073030 | Shunt driver circuit for semiconductor laser diode A driver circuit for the laser diode is disclosed. The driver circuit has the shunt configuration with a switching transistor connected in parallel to the laser diode to shunt the current flowing in the laser diode. In the present invention, the bias for the switchi... | 12/06/2011 |
| 8073025 | Laser light source The present invention relates to a laser light source having a structure for narrowing a wavelength bandwidth of output light. The laser light source comprises, at least, a laser resonator, a pumping light source, an optical path switch device, a diffraction grating... | 12/06/2011 |
| 8071405 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a ... | 12/06/2011 |
| 8067257 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ... | 11/29/2011 |
| 8058642 | Light-receiving device A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately be... | 11/15/2011 |
| 8054525 | Wavelength converter Provided is a wavelength converter having a simple and low-cost structure. The wavelength converter generates converted light having a wavelength different from that of input light. The wavelength converter includes (1) a pump light source that outputs pump light, (... | 11/08/2011 |
