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| Number | Title | Issue Date |
| 8183133 | Method for producing semiconductor substrate There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen i... | 05/22/2012 |
| 8173553 | Epitaxial wafer and production method thereof A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxi... | 05/08/2012 |
| 8173523 | Method of removing heavy metal in semiconductor substrate To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a ma... | 05/08/2012 |
| 8173449 | Method for making COP evaluation on single-crystal silicon wafer An evaluation area of an evaluation object wafer is concentrically divided in a radial direction, an upper limit value to the number of COPs is set in each divided evaluation segment, and an acceptance determination of the single-crystal silicon wafer is made using ... | 05/08/2012 |
| 8172942 | Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a ... | 05/08/2012 |
| 8163083 | Silica glass crucible and method for pulling up silicon single crystal using the same A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or les... | 04/24/2012 |
| 8153450 | Method for manufacturing SIMOX wafer At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means ... | 04/10/2012 |
| 8124501 | Method of producing semiconductor wafer A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of t... | 02/28/2012 |
| 8110486 | Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of... | 02/07/2012 |
| 8105078 | Heat treatment jig for semiconductor silicon substrates and method for manufacturing the same A heat treatment jig for semiconductor silicon substrates is configured such that a cristobalitized oxide film is formed in a region where the cristobalitized oxide film is in contact with a silicon substrate backside. When said heat treatment jig is used, generatio... | 01/31/2012 |
| 8101508 | Silicon substrate and manufacturing method thereof A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation... | 01/24/2012 |
| 8097511 | Semiconductor device having P-N column layer and method for manufacturing the same A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conduc... | 01/17/2012 |
| 8092278 | Reclamation method of semiconductor wafer Chamfer correction is performed to a chamfered portion at least on a front side of a silicon wafer after an incoming inspection. Thereby, a thickness of the chamfered portion on the front side of the wafer is restored, and thus the number of reclamation cycles of th... | 01/10/2012 |
| 8092277 | Method of grinding semiconductor wafers, grinding surface plate, and grinding device A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that cent... | 01/10/2012 |
| 8067820 | Silocon wafer supporting method, heat treatment jig and heat-treated wafer Provided is a method applicable to the production of silicon wafers having crystal orientation or and consisting in specifying wafer-supporting positions on the occasion of heat treatment in a vertical heat treatment furnace as well as a heat treatment j... | 11/29/2011 |
| 8063466 | Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the ... | 11/22/2011 |
| 8061225 | Method for determining COP generation factors for single-crystal silicon wafer A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP densityRADIUSMAX, a minimum value of the COP de... | 11/22/2011 |
| 8048769 | Method for producing bonded wafer There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate an... | 11/01/2011 |
| 8048767 | Bonded wafer and method for producing bonded wafer A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot ... | 11/01/2011 |
| 8030184 | Epitaxial wafer and method of producing the same An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom con... | 10/04/2011 |
| 8030183 | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer The method includes: a first step of colliding ions implanted from a surface of a SIMOX wafer into a silicon layer underneath a BOX layer against crystal defects to destroy the crystal defects; and a second step of heating the wafer obtained in the first step to rec... | 10/04/2011 |
| 8026182 | Heat treatment jig and heat treatment method for silicon wafer In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all ... | 09/27/2011 |
| 8012258 | Melt surface position monitoring apparatus in silicon single crystal growth process The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface positi... | 09/06/2011 |
| 8012255 | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper err... | 09/06/2011 |
| 8008638 | Ion implantation apparatus and ion implantation method This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in r... | 08/30/2011 |
| 7998867 | Method for manufacturing epitaxial wafer An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and ... | 08/16/2011 |
| 7993942 | Method of detecting heavy metal in semiconductor substrate A method of detecting heavy metal in a semiconductor substrate, includes: a gate oxide film forming step of forming an organic oxide film by spin coating or a sol-gel process, and forming a metal/oxide film/semiconductor junction element by using a mercury probe met... | 08/09/2011 |
| 7960254 | Manufacturing method for epitaxial wafer To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial... | 06/14/2011 |
| 7960253 | Thin silicon wafer with high gettering ability and production method thereof In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipita... | 06/14/2011 |
| 7960225 | Method of controlling film thinning of semiconductor wafer for solid-state image sensing device The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermine... | 06/14/2011 |
| 7955982 | Method for smoothing wafer surface and apparatus used therefor Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a f... | 06/07/2011 |
| 7955440 | Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and t... | 06/07/2011 |
| 7951716 | Wafer and method of producing the same A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft... | 05/31/2011 |
| 7951692 | Method of producing semiconductor substrate having an SOI structure There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having... | 05/31/2011 |
| 7939441 | P-type silicon wafer and method for heat-treating the same This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a dept... | 05/10/2011 |
| 7936051 | Silicon wafer and its manufacturing method A silicon wafer which achieves a gettering effect without occurrence of slip dislocations is provided, and the silicon wafer is subject to heat treatment after slicing from a silicon monocrystal ingot so that a layer which has zero light scattering defects according... | 05/03/2011 |
| 7927972 | Method for producing bonded wafer Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is poss... | 04/19/2011 |
| 7919776 | High frequency diode and method for producing same A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×101... | 04/05/2011 |
| 7915145 | Silicon substrate and manufacturing method thereof A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×1016 atoms/cm3 and equal to or lower than 1.6×1017 atoms/cm3 and an initial oxygen... | 03/29/2011 |
| 7910463 | Method of producing SIMOX wafer A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015-1017/cm2 before or after the step of the oxygen ion implantation. ... | 03/22/2011 |
