Assignee: Societe pour l'Etude et la Fabrication de Circuits Integres Speciaux

Location: Grenoble, FR
No. of patents: 23

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Number	Title	Issue Date
5457338	Process for manufacturing isolated semi conductor components in a semi conductor wafer A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silico...	10/10/1995
4891328	Method of manufacturing field effect transistors and lateral bipolar transistors on the same substrate The invention provides a method for manufacturing integrated circuits. For forming circuits incorporating bipolar transistors by CMOS technology r a low cost price, a succession of steps are carried out using only 9 successive masks so as to obtain more partic...	01/02/1990
4805759	Installation and method for handling delicate objects in an atmosphere having a controlled dust content In an installation for conveying delicate objects such as semiconductor layers during processing operations and for handling such objects in a controlled atmosphere, wheeled carriages are drawn along tracks by an endless belt and are not driven by motors ...	02/21/1989
4780429	Method of fabrication of MOS transistors having electrodes of metallic silicide In a method of fabrication of field-effect transistors having very small dimensions, the gate electrode is formed by a first layer of metallic silicide. Insulating embankments are formed along the lateral edges of the gate and a second layer of metallic s...	10/25/1988
4714951	Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi2 while the remainder of the slice is covered with portions of a layer ...	12/22/1987
4706209	Arithmetic and logic unit with overflow indicator The invention concerns the overflow test circuit of an arithmetic and logic unit. The circuit described does not require receiving an indication on the operating in addition or subtraction of the ALU; it receives simply the carrying input the carrying and...	11/10/1987
4703200	Static bistable flip-flop circuit obtained by utilizing CMOS technology A static bistable flip-flop circuit using CMOS technology. The flip-flop reduces the number of CMOS transistors by not using two complimentary transistors in parallel for certain switches. This reduces the risk of transparency which is inherent with conve...	10/27/1987
4679309	Process for manufacturing isolated semi conductor components in a semi conductor wafer A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silico...	07/14/1987
4651036	Logic data transfer bus preloading circuit A data transfer bus preloading circuit including a large sized transistor r ensuring rapid bus conductor preloading. This transistor is conductive at the beginning of the preloading step proper, but is blocked as the bus voltage reaches the desired preloa...	03/17/1987
4628472	Binary multiplier using ternary code The invention provides a high-speed binary multiplier. The binary digits xi of the multiplicand X and yj of the multiplier Y (in two complement form) are converted by respective coders into coefficients ai and bj suc...	12/09/1986
4599575	Broad-band differential amplifier with double reverse feed-back of common mode In order to diminish the risk of oscillation of a broad-band amplifier 20 MHz without considerably reducing the product gain x bandwidth, this amplifier comprises a differential stage T1, T2, T3, T4, a follower stage T5, T6, two common mode feed-back brac...	07/08/1986
4595999	Non-volatile random access memory cell with CMOS transistors having a common floating grid The invention relates to a non-volatile static memory cell. The cell comprises a bistable flip-flop with four transistors, with two complementary outputs. Between the outputs is placed a non-volatile storage element comprising two complementary transistors in ...	06/17/1986
4593454	Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi2 while the remainder of the slice is covered with portions of a layer ...	06/10/1986
4592802	Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit In order to form aluminum interconnections through a thick insulating layer in an integrated circuit without any attendant danger of rupture at the level of the contact openings in the insulating layer between the interconnection layer and the substrate, ...	06/03/1986
4575708	Decoder of a data from a subgroup of P data belonging to a group of N data Being given the number among P of a data, an attempt is made to find the number among N of said data in a group of N data incorporating P selected data. The sequence numbers of these P data appear in a register having N locations and the sequence number o...	03/11/1986
4561932	Method of producing integrated silicon structures on isolated islets of the substrate A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer. This thick oxide layer is formed in the ...	12/31/1985
4559498	Symmetrical integrator and application of said integrator to an electric filter The symmetrical integrator comprises an operational amplifier having two floating inputs and two floating outputs each having a feedback connection to an input via a capacitor. An input capacitor is connected via two MOS transistors to two differential in...	12/17/1985
4541073	Non-volatile flip-flop with a static resetting A flip-flop further comprising two branches with MNOS elements serially connected with P channel MOS transistors for permitting a non-volatile storing of the informations comprised in the flip-flop at a chosen storing time. The memorization of the state o...	09/10/1985
4512029	Non-volatile decade counter using Johnson code or equivalent This invention concerns counters. More specifically, it relates to a non-volatile counting decade, comprising five flipflops, the outputs of which represent the decimal contents of the decade in the Johnson code. In this code, no flipflop changes its state ...	04/16/1985
4488246	Integrated logic network with simplified programming An electrically programmable logic network having an AND matrix, and OR matrix, and interfact circuits for inputting, outputting, and making connections between the matrices. To simplify programming of the matrices and to effect programming simultaneously...	12/11/1984
4459542	Spectrum analyzer having common two-channel filters, especially for voice recognition A spectrum analyzer comprises a plurality of filters each provided with a low-pass output and a high-pass output both having the same cutoff frequency which is different in the case of the different filters. Switching means are provided for periodically c...	07/10/1984
4442398	Integrated circuit generator in CMOS technology An integrated circuit constituting a current generator formed by CMOS technology comprises a first pair of similar transistors, one of which recopies the current of the other, subject to a proportionality factor; a second pair of similar transistors, one ...	04/10/1984
4419631	Integrated circuit amplifier functioning in class AB and incorporating CMOS (metal oxide semiconductor) technology This invention concerns an integrated-circuit amplifier incorporating CMOS (metal oxide semiconductor) technology, which amplifiers are capable of supplying a standardized 600 Ohm load, for example. This amplifier functions in class AB, and its output stage co...	12/06/1983

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Assignee: Societe pour l'Etude et la Fabrication de Circuits Integres Speciaux