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Assignee: Silicon Genesis Corporation


Location: LosGatos, CA
No. of patents: 2

NumberTitleIssue Date
6103599Planarizing technique for multilayered substrates
The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and...
08/15/2000
6083324Gettering technique for silicon-on-insulator wafers
A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce...
07/04/2000
 
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