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| Number | Title | Issue Date |
| 7033962 | Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing higher density of oxide precipitates and larger sizes thereof at a stage ... | 04/25/2006 |
| 7029013 | Seal member, and substrate storage container using the same A seal member for a substrate storage container disposed between an opening end portion of a container body and a cover, which container body and cover form the container and which container body has the opening end portion and stores substrates, is disclosed. The s... | 04/18/2006 |
| 6254933 | Method of chemical vapor deposition A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas ou... | 07/03/2001 |
| 5998281 | SOI wafer and method for the preparation thereof Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a dope... | 12/07/1999 |
| 5595604 | Wafer supporting boat A vertical wafer supporting boat is provided in which adequate reaction gas is supplied to the portion of a wafer surface to be treated which is inserted in holding grooves in members of the wafer supporting boat during the heat treatment and thus uniform... | 01/21/1997 |
| 5584930 | Method for measuring the diameter of a single crystal ingot A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wal... | 12/17/1996 |
| 5584746 | Method of polishing semiconductor wafers and apparatus therefor A method of polishing semiconductor wafers and apparatus therefore are described. According to the present invention, a semiconductor wafer mounted on the lower side of a wafer mounting plate may be polished on a polishing pad by the front referenced poli... | 12/17/1996 |
| 5571321 | Method for producing a gallium phosphide epitaxial wafer This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have.... | 11/05/1996 |
| 5555634 | Wafer holder A wafer holder for handling wafers, particularly during a vapor drying process during automated wafer processing, provides for change of the diameter of the wafers to be held without replacement of one wafer holder with another in a wafer processing appar... | 09/17/1996 |
| 5549502 | Polishing apparatus A grinding method and apparatus having a position aligning mechanism to correctly achieve the centering of each work on a work table and locate an orientation flat part of each work at a predetermined position, and a displacing mechanism for reciprocally ... | 08/27/1996 |
| 5547415 | Method and apparatus for wafer chamfer polishing A method and apparatus for polishing chamfers made along the periphery; of a semiconductor wafer designed such that when the wafer is once picked up by a rotatory suction cup of a transportation robot, arm, the wafer is not released from the suction cup u... | 08/20/1996 |
| 5501172 | Method of growing silicon single crystals The present invention provides a method of growing silicon single crystals by the Czochralski method, wherein the strength of a neck may be increased so as to delete the risk of severance thereof in a simple and easy way without the use of mechanically co... | 03/26/1996 |
| 5462010 | Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity an... | 10/31/1995 |
| 5330729 | Single crystal pulling apparatus A single crystal pulling apparatus of the Czochralski method type wherein the cylindrical heater is supported not only by the two existing electrodes which are vertically shiftable but also by one or more vertical shafts, which may be electrodes or electr... | 07/19/1994 |
| 5317836 | Apparatus for polishing chamfers of a wafer An apparatus for polishing edge chamfers of a semiconductor wafer to mirror gloss, having a rotatory cylindrical buff formed with annular groove(s) in its side and a wafer vacuum holder capable of holding and turning the wafer circumferentially, wherein t... | 06/07/1994 |
| 5317778 | Automatic cleaning apparatus for wafers An automatic cleaning apparatus cleans wafers one at a time without the necessity for transporting the wafers in a carrier such as a wafer cassette or basket. After a manufacturing step such as a polishing step, the wafers are carried to a loader assembly... | 06/07/1994 |
| 5313741 | Method of and an apparatus for slicing a single crystal ingot using an ID saw slicing machine therein An improved method of using an ID saw slicing machine for slicing a single crystal ingot in a direction normal to the axis of the ingot to obtain wafers, of which the improvement lies in that the cutting load which the blade of the ID saw slicing machine ... | 05/24/1994 |
| 5254319 | Single crystal pulling apparatus Aa single crystal pulling apparatus installed on a frame body further includes a second frame body which is founded independently from the main chamber to rigidly support the winder assembly, and a hermetical and flexible tube which is provided between th... | 10/19/1993 |
| 5238875 | Method of producing a bonded wafer This invention provides a bonded wafer of the n/n+ or p/p+ step junction or the SOI configuration possessing an outstanding getter effect by bonding two wafers thereby forming a n/n+ or p/p+ stage junction or a ... | 08/24/1993 |
| 5232870 | Method for production of bonded wafer A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxyg... | 08/03/1993 |
| 5226758 | Method and an apparatus for handling wafers A semiconductor wafer handling apparatus and method for transferring a wafer, one of whose faces has been already polished, from a wafer holder, which holds the wafer with the wafer's polished face facing downward, to a wafer cassette submerged in water c... | 07/13/1993 |
| 5223080 | Method for controlling thickness of single crystal thin-film layer in SOI substrate A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said ... | 06/29/1993 |
| 5183783 | Method for production of dielectric-separation substrate Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein. This dielectric-separatio... | 02/02/1993 |
| 5171708 | Method of boron diffusion into semiconductor wafers having reduced stacking faults A method of diffusing boron into semiconductor wafers is disclosed which essentially includes boron deposition and boron diffusion. The deposition is performed from 900° to 1,000° C. and the diffusion at a temperature of 890° to 1000° C. Oxidation ind... | 12/15/1992 |
| 5157877 | Method for preparing a semiconductor wafer A backing pad be used in a holding jig for holding a semiconductor wafer in the step of mirror polishing comprises a hydrophobic foam, possessed rigidity such that the difference between the thickness T1, thereof under a load of 300 gf/cm2... | 10/27/1992 |
