Assignee: Semiconductor Technology Academic Research Center

Location: Yokohama, JP
No. of patents: 33

Number	Title	Issue Date
8120007	Phase-change memory device, phase-change channel transistor and memory cell array A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory...	02/21/2012
7932508	Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30...	04/26/2011
7897958	Phase-change memory device, phase-change channel transistor, and memory cell array To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device (1) comprises: a first electrode (6); a second electrode (8); and a memory layer (14) provided between...	03/01/2011
7884751	Time-to-digital converter A TDC circuit having a small scale circuit and high resolution is disclosed, which is a time-to-digital converter that detects a phase with respect to a reference clock of a signal to be measured, comprising a first delay line in which a plurality of first delay ele...	02/08/2011
7619473	Fully-differential amplifier A fully-differential amplifier able to operate at a low power supply voltage and provided with a common-mode signal suppression function is disclosed. This fully-differential amplifier is provided with a first fully-differential amplifier configured by a single-stag...	11/17/2009
7590198	Impulse-based communication system A synchronization acquisition method for impulse-based communication including synchronizing received information with a first pulse signal having the same period as the transmit information transmitted from the transmitting end. When the correlation between the rec...	09/15/2009
7360024	Multi-port integrated cache A multi-port instruction/data integrated cache which is provided between a parallel processor and a main memory and stores therein a part of instructions and data stored in the main memory has a plurality of banks, and a plurality of ports including an instruction p...	04/15/2008
7343571	Simulation model for a semiconductor device describing a quasi-static density of a carrier as a non-quasi-static model There is disclosed a simulation model for designing a semiconductor device, comprising adding at least a part of a difference between a density of a carrier described in a quasi-static manner with respect to a voltage applied between electrodes at a first time and a...	03/11/2008
7303990	Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound cont...	12/04/2007
7304384	Semiconductor device with a barrier film which contains manganese A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed b...	12/04/2007
7299394	Method and apparatus for determining optimum initial value for test pattern generator The purpose of the invention is to determine an optimum initial value to be input to a test pattern generator in order to achieve efficient testing of an integrated circuit. To achieve this purpose, a minimum test length is obtained by performing a fault simulation ...	11/20/2007
7266578	Method and hardware for computing reciprocal square root and program for the same A reciprocal square root for a radix of x is calculated when S[j] represents the partial result obtained after j iterations of calculation, W[j], a residual, and P[j], the product of an operand X and the S[j]. Firstly, appropriate values are set to the...	09/04/2007
7244919	Semiconductor integrated circuit device having photo detector circuits, processing elements, and comparing circuits which compare the output of a photo detector element with a reference voltage A semiconductor integrated circuit device is provided which has a plurality of photo detector circuits and a plurality of processing elements. Each of the photo detector circuits includes a comparing circuit, which compares an output of a photo detector element with...	07/17/2007
7242337	Band-pass Δ-Σ AD modulator for AD-converting high frequency narrow-band signal with higher precision and lower power consumption A continuous-time band-pass ΔΣ AD modulator subtracts an analog signal from a DA converter from an inputted analog signal, outputs an analog signal having a subtraction result to an AD converter via a continuous-time analog band-pass filter, outputs a digital sign...	07/10/2007
7227482	Complex band-pass filter for use in digital radio receiver and complex band-pass Δ-Σ AD modulator using the same In a first-order complex band-pass filter, multiplexers are alternately switched over between time intervals of phases A and B, where the multiplexers includes two multiplexers provided at input and output stages, and a multiplexer provided in a feedback circuit of ...	06/05/2007
7213218	Simulation model for design of semiconductor device, thermal drain noise analysis method, simulation method, and simulation apparatus A semiconductor device simulation method includes the step of storing, in a storage unit, a surface potential and threshold voltage obtained by computation, the step of computing thermal drain noise on the basis of the data of the surface potential and thermal drain...	05/01/2007
7184134	Real-time monitoring apparatus for plasma process A real-time monitoring apparatus for a plasma process comprises a plurality of measuring units (10) mounted on a semiconductor wafer, a receiving device (7) for receiving a signal transmitted from each of the measuring units (10), and a data pro...	02/27/2007
7178008	Register access scheduling method for multi-bank register file of a super-scalar parallel processor A parallel processor has a plurality of operation units that execute operation instructions, and a multi-bank register file in which a plurality of banks each having a plurality of registers are formed. Each of machine instructions, which are input simultaneously, i...	02/13/2007
7098437	Semiconductor integrated circuit device having a plurality of photo detectors and processing elements A semiconductor integrated circuit device, having a plurality of processing elements accommodated on a single semiconductor chip, has a latch circuit and a selecting circuit. The latch circuit is provided at an output of each of the processing elements. The selectin...	08/29/2006
7088084	Power supply circuit capable of rapidly changing output voltages A voltage control circuit is connected to a voltage source. The voltage control circuit changes voltages of n different values and outputs them to an output node of the voltage control circuit according to control signals. A first switch element is connected between...	08/08/2006
7058049	Load store queue applied to processor An in-order state queue holds store tags as in-order information about store instructions. A temporal store cache, which uses store addresses as indexes, holds store tags and store values. A first retrieving unit retrieves store tags preceding a load tag. A second r...	06/06/2006
7015841	Analog to digital converter circuit of successive approximation type operating at low voltage In a sampling and holding, a control logic circuit connects another end of each capacitor of a DA converter to a ground potential, and outputs a sampled input analog signal from a switched amplifier to one end of a hold capacitor to hold. In a successive approximati...	03/21/2006
6962882	Method of fabricating a semiconductor device having a nanoparticle porous oxide film While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then...	11/08/2005
6922094	Data retaining circuit A data retaining circuit has been disclosed in which, even if a soft error occurs, it is corrected and a normal value can be maintained, the configuration is simple, and high-speed operations are enabled. In this circuit, when a soft error occurs in the data to be p...	07/26/2005
6919750	Clock signal generation circuit used for sample hold circuit A master DLL circuit (3) generates a first delay signal (CKD) by delaying the master clock signal by a first delay time (T0) and generates a first pulse signal (Smp) having a pulse width (T0) of the first delay time, and generates a first contro...	07/19/2005
6919563	Defect evaluation apparatus utilizing positrons Disclosed is a defect evaluation apparatus comprising a source section having a source for generating positrons and a moderator for decelerating the positrons, a sample holding section for holding a sample to be measured, a transfer section for transferring the posi...	07/19/2005
6813703	Emulation system for data-driven processor An emulation system for data-driven processors aims at shortening the emulation time by employing parallel processing techniques without increasing overhead. The emulation system emulates virtual data-driven processors by using real data-driven processors. The emula...	11/02/2004
6812163	Semiconductor device with porous interlayer insulating film In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate includin...	11/02/2004
6787863	Mos field effect transistor and mos capacitor A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is conta...	09/07/2004
6778124	Low power, high speed analog to digital converter A low power consumption, high conversion accuracy, and high speed operation analog/digital converter, that is, a flash-type analog/digital converter provided with a top voltage comparator TC, a bottom voltage comparator BC, a switch circuit Si (1≦i≦M)...	08/17/2004
6737714	FET having a gate electrode of a honeycomb structure There is provided a semiconductor device comprising a gate electrode which is formed on a semiconductor substrate through a gate insulating film and in which a plurality hexagonal rings are mutually connected so as to form a honeycomb structure, drain diffusion laye...	05/18/2004
6661289	Voltage-to-current conversion circuit and OTA using the same A voltage-to-current conversion circuit composed of MOSFETs of the same polarity and an OTA with Rail-to-Rail with a simple configuration that uses the same have been disclosed. The voltage-to-current conversion circuit comprises a first MOSFET, to which ...	12/09/2003
6420745	Nonvolatile ferroelectric memory and its manufacturing method A nonvolatile semiconductor memory, including a ferroelectric capacitor connected to the gate of a MOSFET, comprises a silicon thin film formed in stripes on an insulated substrate and having an n+ -region, a p-region and an n+ -regi...	07/16/2002

PatentStorm

Celebrity Inventors

PatentStorm News

Assignee: Semiconductor Technology Academic Research Center