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| Number | Title | Issue Date |
| 7927517 | Coating solution for forming high dielectric constant thin film and method for forming dielectric thin film using the same Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoi... | 04/19/2011 |
| 7916450 | Ceramic slurry composition, method for producing thin green sheet by extrusion, and electronic device fabricated using the green sheet A ceramic slurry composition includes 20˜50 wt. % of a ceramic powder, 2˜10 wt. % of a polymer having average molecular weight of 400,000 or more, 0.1˜2 wt. % of a polymer having hydrogen bond-forming functional groups, and 40˜75 wt. % of a solvent. If necessary... | 03/29/2011 |
| 7887879 | Coating solution for forming high dielectric constant thin film and method for forming dielectric thin film using the same Disclosed herein are a coating solution for the formation of a dielectric thin film and a method for the formation of a dielectric thin film using the coating solution. The coating solution comprises a titanium alkoxide, a β-diketone or its derivative, and a benzoi... | 02/15/2011 |
| 7886436 | Thin film capacitor-embedded printed circuit board and method of manufacturing the same Disclosed herein is a printed circuit board with an embedded thin-film capacitor, and a method of manufacturing the same. Specifically, the present invention relates to a printed circuit board with an embedded thin-film capacitor, comprising a lower electrode... | 02/15/2011 |
| 7851393 | Glass composition for low temperature sintering, glass frit, dielectric composition and multilayer ceramic capacitor using the same The invention relates to a glass composition and a glass frit adequate for low temperature sintering agent at 1,100° C. or less, and a dielectric composition and a multilayer ceramic capacitor using the same. The glass composition comprises aLi2O-bK... | 12/14/2010 |
| 7839376 | Time control circuit for backlight inverter In a time control circuit, a capacitor is connected between a connecting pin and a ground. A first current source supplies a first current to the connecting pin. A first comparator element has a non-inverse terminal connected to a voltage of the capacitor and a pre-... | 11/23/2010 |
| 7829056 | Method of coating a substrate with a polymer having a combination of crown ether and carbon nanotubes having guanidine groups Disclosed herein is a method of forming a guanidine group on carbon nanotubes to improve the dispersibility of carbon nanotubes, a method of attaching carbon nanotubes having guanidine groups to a substrate, and carbon nanotubes and a substrate manufactured by the a... | 11/09/2010 |
| 7807521 | Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride se... | 10/05/2010 |
| 7792216 | Timing estimator in OQPSK demodulator A timing estimator of an OQPSK demodulator is provided. In the timing estimator, an A/D converter converts an analog reception signal into a digital reception signal. A differential circuit section delays the digital reception signal from the A/D converter by a pres... | 09/07/2010 |
| 7780748 | Thin type micro reforming apparatus A thin type reforming apparatus used for a fuel cell is provided. In the thin type reforming apparatus, a substrate has a passage formed therein, and a fuel inlet introduces fuel to the passage. An evaporator is disposed within the substrate downstream of the fuel i... | 08/24/2010 |
| 7777245 | Nitride semiconductor light emitting device The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a s... | 08/17/2010 |
| 7771081 | LED package and backlight unit using the same The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and... | 08/10/2010 |
| 7737529 | Printed circuit board with film capacitor embedded therein and method for manufacturing the same The invention provides a PCB with a thin film capacitor embedded therein and a method for manufacturing the same. The PCB includes a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the lower electrode via low temperature f... | 06/15/2010 |
| 7737429 | Nitride based semiconductor device using nanorods and process for preparing the same Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorod... | 06/15/2010 |
| 7727294 | Thin micro reforming apparatus having reduced back pressure in evaporator thereof The invention relates to a thin micro reforming apparatus used in a fuel cell system with decreased back pressure in an evaporator thereof. In the reforming apparatus, a substrate has a flow path therein and a fuel inlet portion for introducing fuel into the flow pa... | 06/01/2010 |
| 7718992 | Nitride semiconductor device A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier l... | 05/18/2010 |
| 7714351 | Nanowire light emitting device and method of manufacturing the same The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second c... | 05/11/2010 |
| 7709845 | Semiconductor light emitting device with improved current spreading structure The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed o... | 05/04/2010 |
| 7705364 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-n... | 04/27/2010 |
| 7695693 | Thin type micro reformer A thin type reformer for a fuel cell is provided, and includes a substrate, fuel filling portion, reformer portion, CO remover, and cover. The substrate forms a passage within. The fuel filling portion fills the passage with fuel. The reformer portion forms a passag... | 04/13/2010 |
| 7692201 | Semiconductor light-emitting device with improved light extraction efficiency The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substra... | 04/06/2010 |
| 7691651 | Method for manufacturing nitride-based semiconductor device In a method for manufacturing a high-quality GaN-based semiconductor layer on a substrate of different material, an AlN nucleation layer is grown on a substrate, a GaN buffer layer is grown on the AlN nucleation layer, and the substrate annealed. The AlN nucleation ... | 04/06/2010 |
| 7687814 | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so cal... | 03/30/2010 |
| 7687292 | Light emitting diode package with metal reflective layer and method of manufacturing the same The invention relates to an LED package having a metal reflective layer for focusing and emitting light through a side of the package, and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, a light emitting dio... | 03/30/2010 |
| 7678592 | LED housing and fabrication method thereof In an LED housing, a heat conducting part has a chip mounting area, a heat connecting area opposed to the chip mounting area and a groove formed adjacent to the heat connecting area. An electrical connecting part has a wiring area placed adjacent to the chip mountin... | 03/16/2010 |
| 7675756 | Thin film-capacitor-embedded printed circuit board and method of manufacturing the same Disclosed herein is a printed circuit board with an embedded thin-film capacitor, and a method of manufacturing the same. Specifically, the present invention relates to a printed circuit board with an embedded thin-film capacitor, comprising a lower electrode... | 03/09/2010 |
| 7663199 | High power light emitting diode package and fabrication method thereof The invention relates to a high power LED package and a fabrication method thereof. The LED package includes a light emitting part for generating light in response to power applied, a heat conducting member with the light emitting part mounted thereon, a lead part f... | 02/16/2010 |
| 7645689 | Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a ... | 01/12/2010 |
| 7644480 | Method for manufacturing multilayer chip capacitor A method for manufacturing a multilayer chip capacitor includes: forming screen patterns on mother green sheets such that a widthwise margin is not formed on the mother green sheets, the screen patterns are spaced apart from each other in the width direction and the... | 01/12/2010 |
| 7629957 | LED backlight apparatus with color deflection removed at periphery thereof The invention relates to a direct backing type LED backlight apparatus which supplies a white light source by mixing monochromatic LEDs to a display device. The backlight apparatus includes a first LED row composed of red LEDs disposed adjacent to opposed peripherie... | 12/08/2009 |
| 7629685 | Semiconductor device package Disclosed is a semiconductor device package. The semiconductor device package includes at least one semiconductor device acting as a heating source, a package substrate having an upper surface on which the semiconductor device is mounted, the package substrate at le... | 12/08/2009 |
| 7626250 | High power LED package and fabrication method thereof An LED diode package includes a heat connecting part for mounting a light emitting part on an upper surface thereof, frames electrically connected to the light emitting part while holding the heat connecting part and a molded part fixing the heat connecting part and... | 12/01/2009 |
| 7613261 | Method of estimating symbol synchronization in OQPSK demodulator The present invention relates to a method of estimating symbol synchronization for an Offset Quadrature Phase Shift Keying (OQPSK) demodulator applicable to a Zigbee receiver. More particularly, the invention relates to a method of recovering symbol synchronization ... | 11/03/2009 |
| 7613231 | Apparatus and method for detecting code of direct sequence spread spectrum signal Provided is an apparatus and method for detecting a code of a direct sequence spread spectrum signal obtained by spreading data in a direct sequence spread spectrum method with a predetermined code to despread the direct sequence spread spectrum signal. The apparatu... | 11/03/2009 |
| 7609504 | High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same The invention relates to a high-dielectric constant metal/ceramic/polymer composite material and a method for producing an embedded capacitor. As ceramic particles having a relatively small size are bound to the surface of metal particles having a relatively ... | 10/27/2009 |
| 7605104 | Glass composition for low temperature sintering, dielectric composition and multilayer ceramic capacitor using the same The invention relates to a glass composition and a glass frit adequate for low temperature sintering agent at 1,100° C. or less, and a dielectric composition and a multilayer ceramic capacitor using the same. The glass composition comprises aLi2O-bK... | 10/20/2009 |
| 7599166 | Multilayer chip capacitor A multilayer chip capacitor includes a capacitor body having dielectric layers, and internal electrode layers separated from each other in the capacitor body by the dielectric layers. Each internal electrode layer has one or two leads and includes at least one copla... | 10/06/2009 |
| 7597232 | Apparatus for applying conductive paste onto electronic component An apparatus and a method for applying a conductive paste, for forming electrodes, onto an electronic component, such as a micro chip device. The apparatus includes a first jig unit provided with paste holes, which are filled with the conductive paste; and a second ... | 10/06/2009 |
| 7582496 | LED package using Si substrate and fabricating method thereof There are provided an LED package using a Si substrate and a fabricating method of the LED package. In the LED package, a supporting structure includes a Si substrate and an insulating layer formed on top and bottom surfaces of the Si substrate, and the supporting s... | 09/01/2009 |
| 7581853 | LED package and backlight unit using the same The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and... | 09/01/2009 |
