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| Number | Title | Issue Date |
| 7196009 | Lapping carrier, apparatus for lapping a wafer and method of fabricating a lapping carrier A method of fabricating a lapping carrier is provided that includes the steps of defining at least one opening extending through a workpiece that is sized to receive a wafer, and cryogenically tempering the workpiece to produce a lapping carrier. By cryogenically te... | 03/27/2007 |
| 7137405 | Low pressure check valve A check valve for preventing backflow of media including a valve movably coupled to a carrier body, the valve including a flexible membrane disposed therein such that the flexible membrane flexibly engages an aperture in the carrier body to prevent backflow of media... | 11/21/2006 |
| 7112509 | Method of producing a high resistivity SIMOX silicon substrate The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Prec... | 09/26/2006 |
| 7059943 | Method and apparatus for recycling slurry A slurry recycling apparatus having a first filter, a dirty side storage tank, slurry pump, second filter, clean side storage tank and slurry outlet, in which used slurry from an edge notch polishing apparatus is delivered to the first screen filter, transported to ... | 06/13/2006 |
| 6896727 | Method of determining nitrogen concentration within a wafer An improved method of determining the concentration of nitrogen within a wafer is provided. At least a portion of the nitrogen within the wafer is initially gettered to a gettering site. In order prevent the in-diffusion of nitrogen, a barrier layer is generally dep... | 05/24/2005 |
| 6889684 | Apparatus, system and method for cutting a crystal ingot The apparatus, system and method for cutting crystal ingot provide techniques for cutting an ingot into wafers with a wire cutting apparatus utilizing wire with a diameter of less than 0.18 mm, such as 0.14 mm. The wire cutting apparatus also includes multiple rolle... | 05/10/2005 |
| 6849548 | Method of reducing particulate contamination during polishing of a wafer A method of polishing the surface of a semiconductor wafer such that the adherence of abrasive particles to the surface of the wafer is minimized, resulting in a semiconductor wafer having a reduced number of pits. The invented method has two stages. The first stage... | 02/01/2005 |
| 6808564 | In-situ post epitaxial treatment process A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer on said semiconductor wafer substrate. The formation area consists ess... | 10/26/2004 |
| 6798526 | Methods and apparatus for predicting oxygen-induced stacking fault density in wafers Methods and apparatus for predicting the density of oxygen-induced stacking faults (OSF) on a surface of a wafer by measuring the surface roughness before and after a surface damaging process is presented. Such damage can be produced by, but not limited to, a wet sa... | 09/28/2004 |
| 6794227 | Method of producing an SOI wafer A semiconductor wafer manufacturing is disclosed wherein an SOI wafer is produced by annealing a polysilicon layer deposited on a substrate wafer in an oxygen-containing ambient, and annealing the wafer at high temperatures to form an oxide layer at the interface of... | 09/21/2004 |
| 6768965 | Methods and computer program products for characterizing a crystalline structure Methods and computer program products are provided for analyzing a crystalline structure, such as a wafer or an epitaxial layer in more detail, including the portion of the crystalline structure proximate the edge. The methods and computer program products of one as... | 07/27/2004 |
| 6760403 | Method and apparatus for orienting a crystalline body during radiation diffractometry The method and apparatus of the present invention permit indirect identification of a target plane, such as the plane identified by an alignment feature, based upon the identification of a reference plane which is offset by a predetermined angle from the target plan... | 07/06/2004 |
| 6743080 | Method for seasoning a polishing pad A method of preparing a polishing pad of a hydrophobic material for a polishing procedure includes, prior to the polishing procedure, contacting the polishing pad with a solution of at least one component for converting at least a portion of a polishing surface, inc... | 06/01/2004 |
| 6733368 | Method for lapping a wafer An improved method for lapping the opposed major surfaces of a wafer is provided. In this regard, a multi-step lapping process is provided in which lapping continues while transitioning from a first slurry having larger abrasive particles to a second slurry having s... | 05/11/2004 |
| 6703290 | Growth of epitaxial semiconductor material with improved crystallographic properties A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes etching the wafer surface and then growing an initial portion of the epitaxial layer under conditions of relatively high temperature and low sour... | 03/09/2004 |
| 6676489 | Sound enhanced lapping apparatus A method of lapping semiconductor wafers includes the step of transmitting sounds generated during the lapping process to a receiver, allowing the operator to use sound to more quickly detect problems associated with starting the lap process.... | 01/13/2004 |
| 6673147 | High resistivity silicon wafer having electrically inactive dopant and method of producing same An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot h... | 01/06/2004 |
| 6669775 | High resistivity silicon wafer produced by a controlled pull rate czochralski method A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method ... | 12/30/2003 |
| 6669777 | Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication A high resistivity wafer which does not exhibit diminishing resistivity after device installation and method of making the high resistivity wafer comprising a) using the CZ method to grow a silicon single crystal ingot with a resistivity of 100 Ω.multido... | 12/30/2003 |
| 6652824 | Method of growing large-diameter dislocation-free <110> crystalline ingots A method of growing a crystalline ingot having a orientation, such as a dislocation-free ("DF") crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a crystal direction is c... | 11/25/2003 |
| 6649065 | Bromine biocide removal A system and method are provided which removes bromine biocide used in effluent process streams without the use of chemicals or complex mechanical systems. In particular, the system and method of the present invention remove bromine biocide by photodissoc... | 11/18/2003 |
| 6649427 | Method for evaluating impurity concentrations in epitaxial susceptors A method for non-destructively evaluating the concentration of impurities in an epitaxial susceptor used in the processing of a semiconductor substrate. The method includes processing a semiconductor substrate of known impurity levels on the epitaxial sus... | 11/18/2003 |
| 6632688 | Method for evaluating impurity concentrations in epitaxial reagent gases A method for evaluating the concentration of impurities in gases used in depositing an epitaxial layer on a semiconductor substrate. The method includes processing a semiconductor substrate of known impurity levels in an epitaxial reactor, and measuring t... | 10/14/2003 |
| 6632277 | Optimized silicon wafer gettering for advanced semiconductor devices A method of manufacturing a silicon wafer with robust gettering sites and a low concentration of surface defects is provided. The method comprises adding polycrystalline silicon to a crucible; adding a nitrogen-containing dopant to the crucible; heating t... | 10/14/2003 |
| 6630363 | Method for evaluating impurity concentrations in unpolished wafers grown by the Czochralski method A method for evaluating the concentration of impurities in as-grown monocrystalline semiconductor ingots is provided. The method includes growing a monocrystalline semiconductor ingot, and measuring the bulk impurity levels of the ingot by drawing togethe... | 10/07/2003 |
| 6620998 | Recycling heat from industrial processes to generate electricity using a thermophotovoltaic generator The invention teaches a method and apparatus for the generation of electric power by recycling the heat generated by various industrial processes. Thermophotovoltaic cells are used to convert the heat radiated from the industrial apparatus used to perform... | 09/16/2003 |
| 6620632 | Method for evaluating impurity concentrations in semiconductor substrates A method for evaluating the concentration of impurities in a semiconductor substrate. The method includes drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. In one embodiment of th... | 09/16/2003 |
| 6606582 | Universal system, method and computer program product for collecting and processing process data including particle measurement data A universal system and method are provided for collecting a plurality of different types of process data, including particle measurement data, from remote locations without requiring manual intervention. The universal system includes a plurality of partic... | 08/12/2003 |
| 6583024 | High resistivity silicon wafer with thick epitaxial layer and method of producing same A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a... | 06/24/2003 |
| 6576501 | Double side polished wafers having external gettering sites, and method of producing same A semiconductor wafer manufacturing process is disclosed wherein a double side polished wafer having oxygen induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The process includes polishing the back surface of the waf... | 06/10/2003 |
| 6569749 | Silicon and oxygen ion co-implanation for metallic gettering in epitaxial wafers A novel method of generating intrinsic gettering sites in epitaxial wafers employs co-implanting silicon and oxygen into a substrate of the wafer, annealing the substrate at a low temperature, and then depositing the epitaxial layer on a surface of the su... | 05/27/2003 |
| 6565652 | High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnet... | 05/20/2003 |
| 6565651 | Optimized silicon wafer strength for advanced semiconductor devices A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-... | 05/20/2003 |
| 6514337 | Method of growing large-diameter dislocation-free<110> crystalline ingots A method of growing a crystalline ingot having a orientation, such as a dislocation-free ("DF") crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a crystal direction is c... | 02/04/2003 |
| 6506667 | Growth of epitaxial semiconductor material with improved crystallographic properties A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flo... | 01/14/2003 |
| 6503363 | System for reducing wafer contamination using freshly, conditioned alkaline etching solution A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution inc... | 01/07/2003 |
| 6497765 | Multi piece swivel chuck for holding conical shaped work An improved chuck for supporting elongated work pieces having conical end portions, such as single crystal ingots used to fabricate semiconductor wafers, while such. The chuck is typically used in a lathe for positioning and allowing rotation of the work ... | 12/24/2002 |
| 6488768 | Method and apparatus for treating discharge gas from a Czochralski crystal growing chamber utilizing water spray A water spray subsystem apparatus and method of treating discharge gas designed for use in the gas discharge zone of a Czochralski crystal growing apparatus. The subsystem composes a structure containing or defining a water spray body, which is capable of... | 12/03/2002 |
| 6482749 | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid A method for fabricating wafers is provided that uses a potassium-based oxidizer in the presence of hydrofluoric acid as the chemical etchant for etching the wafer edge. The potassium-based chemical etchant is preferably potassium permanganate KMnO4 | 11/19/2002 |
| 6475385 | Resin trap device for use in ultrapure water systems and method of purifying water using same The present invention is directed to the use of a resin trap device to remove large resin particles from water in a water purification system to thereby protect downstream ultrafiltration equipment. The present invention includes a resin trap device which... | 11/05/2002 |
