Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8162728 | Dual-pore structure polishing pad The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore wal... | 04/24/2012 |
| 8119529 | Method for chemical mechanical polishing a substrate A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: wat... | 02/21/2012 |
| 8118897 | Mix head assembly for forming chemical mechanical polishing pads A mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers is provided, wherein inclusions of entrained gas inclusion defects are minimized. ... | 02/21/2012 |
| 8118644 | Chemical mechanical polishing pad having integral identification feature Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-p... | 02/21/2012 |
| 8118641 | Chemical mechanical polishing pad having window with integral identification feature Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identi... | 02/21/2012 |
| 8083570 | Chemical mechanical polishing pad having sealed window A multilayer chemical mechanical polishing pad is provided, having a polishing layer with a polishing surface, a polishing layer interfacial region parallel to the polishing surface and an outer perimeter; a porous subpad layer with a bottom surface, a porous subpad... | 12/27/2011 |
| 8071479 | Chemical mechanical polishing composition and methods relating thereto A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive... | 12/06/2011 |
| 8062103 | High-rate groove pattern The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The polishing pad comprises a center, an inner region surrounding the center, a tr... | 11/22/2011 |
| 8057282 | High-rate polishing method The invention provides a method for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The substrate is fixed within a carrier fixture having a channel-free surface. The method compri... | 11/15/2011 |
| 8025813 | Chemical mechanical polishing composition and methods relating thereto A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing compositio... | 09/27/2011 |
| 7988878 | Selective barrier slurry for chemical mechanical polishing The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent... | 08/02/2011 |
| 7981316 | Selective barrier metal polishing method The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the ... | 07/19/2011 |
| 7947098 | Method for manufacturing chemical mechanical polishing pad polishing layers having reduced gas inclusion defects A method for manufacturing chemical mechanical polishing pad polishing layers that minimizes entrained gas inclusion defects is provided. Also provided is a mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers, wherein i... | 05/24/2011 |
| 7842192 | Multi-component barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for redu... | 11/30/2010 |
| 7828634 | Interconnected-multi-element-lattice polishing pad The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a plurality of polishing elements (402, ... | 11/09/2010 |
| 7820005 | Multilayer chemical mechanical polishing pad manufacturing process A method for making a multilayer chemical mechanical polishing pad comprising: providing a polishing layer, providing a subpad layer, optionally providing additional layers, providing an unset reactive hot melt adhesive, applying the unset reactive hot melt adhesive... | 10/26/2010 |
| 7807252 | Chemical mechanical polishing pad having secondary polishing medium capacity control grooves A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of second... | 10/05/2010 |
| 7807038 | Method for electrochemical mechanical polishing The present invention provides a method of electrochemical polishing of a workpiece using a polishing pad having a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm; wherein the cellular polym... | 10/05/2010 |
| 7790618 | Selective slurry for chemical mechanical polishing An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonioni... | 09/07/2010 |
| 7785487 | Polymeric barrier removal polishing slurry The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10... | 08/31/2010 |
| 7709053 | Method of manufacturing of polymer-coated particles for chemical mechanical polishing A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor i... | 05/04/2010 |
| 7645186 | Chemical mechanical polishing pad manufacturing assembly A chemical mechanical polishing pad manufacturing assembly is provided having a subpad layer having a top surface and a bottom surface; a backing plate having a top side and a bottom side; a sacrificial layer having at least two recessed areas designed to facilitate... | 01/12/2010 |
| 7635291 | Interpenetrating network for chemical mechanical polishing Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided ar... | 12/22/2009 |
| 7635290 | Interpenetrating network for chemical mechanical polishing Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided ar... | 12/22/2009 |
| 7604529 | Three-dimensional network for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnect... | 10/20/2009 |
| 7569268 | Chemical mechanical polishing pad The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores... | 08/04/2009 |
| 7537446 | Apparatus for forming a porous reaction injection molded chemical mechanical polishing pad The present invention provides an apparatus for forming a chemical mechanical polishing pad, comprising a tank with polymeric materials, a storage silo with microspheres, a isocyanate storage tank with isocyanates and a premix prep tank for forming a pre-mixture of ... | 05/26/2009 |
| 7530887 | Chemical mechanical polishing pad with controlled wetting Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R, is between 0.01 and 0.75. Also provided are methods of making the chemic... | 05/12/2009 |
| 7520798 | Polishing pad with grooves to reduce slurry consumption A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrie... | 04/21/2009 |
| 7520796 | Polishing pad with grooves to reduce slurry consumption A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrie... | 04/21/2009 |
| 7517488 | Method of forming a chemical mechanical polishing pad utilizing laser sintering The present invention provides a method of manufacturing a porous chemical mechanical polishing pad comprising focusing a laser beam from a laser into a sintering nozzle and injecting the fluidized thermoplastic particles into the sintering nozzle via an injection p... | 04/14/2009 |
| 7517277 | Layered-filament lattice for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of a magnetic, optical and semiconductor substrate (112) in the presence of a polishing medium (120). The polishing pad 104 includes multiple layers of polishing filaments (2... | 04/14/2009 |
| 7503833 | Three-dimensional network for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnect... | 03/17/2009 |
| 7497967 | Compositions and methods for polishing copper The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, ... | 03/03/2009 |
| 7491252 | Tantalum barrier removal solution A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tanta... | 02/17/2009 |
| 7458885 | Chemical mechanical polishing pad and methods of making and using same Shape memory chemical mechanical polishing pads are provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided are methods of making the shape memory chemical mechanical polishing pads and for... | 12/02/2008 |
| 7455571 | Window polishing pad A window polishing pad having a reduced stress pad window formed therein for performing optical end point detection are provided, wherein the window polishing pad comprises a pad window and a pressure relief channel, wherein the pressure relief channel extends to an... | 11/25/2008 |
| 7445847 | Chemical mechanical polishing pad The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities... | 11/04/2008 |
| 7438636 | Chemical mechanical polishing pad A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric ... | 10/21/2008 |
| 7435364 | Method for forming a porous polishing pad The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the ... | 10/14/2008 |
