"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 8089163 | Semiconductor device production method and semiconductor device A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second m... | 01/03/2012 |
| 8023325 | Semiconductor memory having electrically erasable and programmable semiconductor memory cells An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level st... | 09/20/2011 |
| 7982275 | Magnetic element having low saturation magnetization A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to s... | 07/19/2011 |
| 7968396 | Semiconductor device and manufacturing method of the semiconductor device A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in... | 06/28/2011 |
| 7947560 | Method of nickel disilicide formation and method of nickel disilicate source/drain formation A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrat... | 05/24/2011 |
| 7927933 | Method to enhance the initiation of film growth The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, me... | 04/19/2011 |
| 7904641 | Processor system using synchronous dynamic memory A processor system including: a processor and controller core connected via an internal bus; and a plurality of synchronous memory chips connected to the processor via an external bus; the controller core including a mode register selected by an address signal from ... | 03/08/2011 |
| 7881111 | Semiconductor memory having electrically erasable and programmable semiconductor memory cells An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level st... | 02/01/2011 |
| 7847500 | Synchronous motor control device Control technique of a synchronous motor capable of suppressing rotation pulsation caused by individual difference without complicating control algorithm is provided. A pulsation generator superimposing a pulsation component anticipated in advance to a current comma... | 12/07/2010 |
| 7814223 | Packet communication device, packet communication system, packet communication system, packet communication module, data processor, and data transfer system A transmit packet generated by a CPU 1 is held in a buffer 100a (100b). From among packets received from Ethernet 820a (820b), a packet, a destination of which is a communication device 800, is he... | 10/12/2010 |
| 7795648 | Semiconductor device comprising capacitor and method of fabricating the same A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. ... | 09/14/2010 |
| 7781846 | Semiconductor integrated circuit device Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leadin... | 08/24/2010 |
| 7773662 | Synchronizing to symbols received via wireless communications channel Synchronization techniques for reducing the effects of time dispersive wireless communications channels are presented. A synchronization technique for communications over a time dispersive wireless channel includes receiving a signal having at least identical first ... | 08/10/2010 |
| 7773426 | Data processing system and nonvolatile memory Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the nonvolatile memory cell by electrical erasing and writing controls a... | 08/10/2010 |
| 7769074 | Detecting and synchronizing to frequency hopped packets Methods and systems for detecting and synchronizing to frequency hopped packets are presented. A technique for detecting a transmitter frequency hopping pattern includes receiving a packet of preamble symbols respectively transmitted over multiple frequency sub-band... | 08/03/2010 |
| 7765269 | Communications system, and information processing device and control device incorporating said communications system This invention provides communications systems that enable broadcasting while making use of the simplicity of the prior art and also provides control devices and information processing systems incorporating the communications system. In this invention, chip-select s... | 07/27/2010 |
| 7741656 | Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is... | 06/22/2010 |
| 7737023 | Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric... | 06/15/2010 |
| 7718526 | Fabrication method of semiconductor integrated circuit device A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum p... | 05/18/2010 |
| RE41245 | Semiconductor memory device Successive data read access with a final address specified is detected by a command mode detecting circuit to set a command mode entry status. In the command mode entry, a command of designating an internal state is made acceptable in accordance with a predetermined... | 04/20/2010 |
| 7687914 | Semiconductor device and a method of manufacturing the same and designing the same There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be place... | 03/30/2010 |
| 7681308 | Fabrication method of semiconductor integrated circuit device A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By... | 03/23/2010 |
| 7671381 | Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is... | 03/02/2010 |
| 7655993 | Method for manufacturing semiconductor integrated circuit device In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is su... | 02/02/2010 |
| 7645655 | Semiconductor device and manufacturing method of the semiconductor device A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in... | 01/12/2010 |
| 7643042 | Display device and driving circuit for displaying A display driver for outputting gradation voltages corresponding to gradation data from an external device to pixels. The display driver includes a generator for generating a plurality of gradation voltages having a plurality of levels based on a reference voltage, ... | 01/05/2010 |
| 7630068 | Method and system of defect inspection for mask blank and method of manufacturing semiconductor device using the same Defect detection is performed with two settings, that is, setting of a focus position where a signal intensity obtained from a dot pattern is maximum and setting of a focus position where a signal intensity obtained from a hole pattern is maximum. In addition, defec... | 12/08/2009 |
| 7626267 | Semiconductor integrated circuit device including wiring lines and interconnections Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections ... | 12/01/2009 |
| 7613903 | Data processing device with instruction translator and memory interface device to translate non-native instructions into native instructions for processor A data processing device includes a processor core, and a memory interface portion arranged between the processor core and an external memory mapped into a predetermined external memory space. The memory interface portion includes a fetch circuit for receiving an ad... | 11/03/2009 |
| 7613863 | High-speed data readable information processing device A CAN module receives a message from a CAN bus to store the same in a message box unit of a message box. A reception request signal is output from the message box unit to a DMAC/IF. The DMAC/IF outputs a 7-bit encoded address together with a transfer request signal.... | 11/03/2009 |
| 7612601 | Semiconductor integrated circuit device A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a ... | 11/03/2009 |
| 7608899 | Semiconductor device Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide i... | 10/27/2009 |
| 7604925 | Exposure apparatus and method A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern... | 10/20/2009 |
| 7602654 | Semiconductor memory device comprising a plurality of static memory cells A driver power supply circuit stepping down a power supply voltage is arranged at a power supply node of a word line driver. The driver power supply circuit includes a non-silicide resistance element of N+ doped polycrystalline silicon, and a pull-down circuit lower... | 10/13/2009 |
| 7598020 | Exposure apparatus and method A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist expos... | 10/06/2009 |
| 7573835 | Method, system, node, computer program product and communication packet for communicating information in an ad-hoc hierarchically addressed communication network A method of communicating information in a communication network with a plurality of hierarchically addressed nodes includes receiving communication packets identifying 1-hop neighbor node addresses, a number of on-tree neighbors of neighbor nodes transmitting the r... | 08/11/2009 |
| 7570515 | Semiconductor memory having electrically erasable and programmable semiconductor memory cells An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level st... | 08/04/2009 |
| 7569881 | Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage cur... | 08/04/2009 |
| 7530359 | Plasma treatment system and cleaning method of the same A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32 | 05/12/2009 |
| 7470568 | Method of manufacturing a semiconductor device Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate w... | 12/30/2008 |