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| Number | Title | Issue Date |
| 6459137 | Method for constructing ferroelectric capacitors on integrated circuit substrates A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO2 or Si3 N4. The ferroelectric capacitor includes a bottom electrode,... | 10/01/2002 |
| 6417110 | Method for constructing heat resistant electrode structures on silicon substrates A method for constructing an electrode on a silicon substrate in which the electrode will be subjected to high temperatures during subsequent processing steps. A titanium oxide layer is deposited on the silicon substrate and annealed at a temperature high... | 07/09/2002 |
| 6225654 | Static ferrolectric memory transistor having improved data retention An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and secon... | 05/01/2001 |
| 6194751 | Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the inf... | 02/27/2001 |
| 6121648 | Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing A ferroelectric memory cell for storing information and a method for fabricating the same. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric me... | 09/19/2000 |
| 6074885 | Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures A method for constructing a device having a bottom electrode in contact with a layer of a ferroelectric dielectric material. In the method of the present invention, a layer of a field ferroelectric material is deposited on a substrate and etched to form a... | 06/13/2000 |
| 5977577 | Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the inf... | 11/02/1999 |
| 5892255 | Ferroelectric based capacitor for use in memory systems and method for fabricating the same A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirco... | 04/06/1999 |
| 5872739 | Sense amplifier for low read-voltage memory cells A sense amplifier for comparing the resistance of a reference cell connected to a reference bit line to the resistance of a data cell connected to a data bit line. The amplifier includes a first terminal for connecting the sense amplifier to the reference... | 02/16/1999 |
| 5789775 | High density memory and double word ferroelectric memory cell for constructing the same A high density non-volatile ferroelectric-based memory based on a ferroelectric FET operated in a two terminal write mode. Storage words may be constructed either from one or two bit storage cells based on a ferroelectric FET. A memory using either the on... | 08/04/1998 |
| 5453347 | Method for constructing ferroelectric capacitors on integrated circuit substrates A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO2 or Si3 N4. The ferroelectric capacitor includes a bottom electrode,... | 09/26/1995 |
| 5440173 | High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800° C. without destroying the electrical connection between the... | 08/08/1995 |
| 5242534 | Platinum lift-off process A method for generating platinum features on the surface of a substrate is disclosed. The method provides an inexpensive means for constructing small platinum features. The method utilizes a photoresist mask to define the platinum features. The problems a... | 09/07/1993 |
| 5239399 | Electrical-optical interface device Devices for converting digital data into a light pulse train and decoding such a pulse train are disclosed. The light pulse generating device generates a train of light pulses having a pattern determined by a numerical value represented by a plurality of ... | 08/24/1993 |
| 5232747 | Platinum-aluminum connection system An improved method for making aluminum connections to platinum electrodes is described. The method utilizes an oxide layer to isolate the aluminum from the platinum. The oxide layer is created by ashing the surface of the platinum using an Oxygen plasma.... | 08/03/1993 |
| 5212620 | Method for isolating SiO2 layers from PZT, PLZT, and platinum layers An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the S... | 05/18/1993 |
| 5179533 | Read/write optical memory An improved read/write optical disk is disclosed which is capable of being rewritten more than 106 times. The disk utilizes a storage medium in which data is stored by causing a localized region of the storage medium to assume one of two states... | 01/12/1993 |
| 5164808 | Platinum electrode structure for use in conjunction with ferroelectric materials An improved ferroelectric structure and the method for making the same is disclosed. The improved structure reduces the fatigue problems encountered in ferroelectric capacitors while providing avoiding problems in depositing the ferroelectric material whi... | 11/17/1992 |
| 5119329 | Memory cell based on ferro-electric non volatile variable resistive element An improved memory device based on a non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferro-electric layer. The semiconducto... | 06/02/1992 |
| 5070385 | Ferroelectric non-volatile variable resistive element An improved non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferroelectric layer.... | 12/03/1991 |
| 5051950 | Read/write optical memory An improved read/write optical disk is disclosed which is capable of being rewritten more than 106 times. The disk utilizes a storage medium in which data is stored as different polarization states in the same phase of the material. The preferr... | 09/24/1991 |
