Assignee: RJ Mears, LLC

Location: Waltham, MA
No. of patents: 25

Number	Title	Issue Date
7288457	Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one MOSFET by forming spaced apart source and drain regions and a superlattice on the substrate so that the superlattice is between the source and drain r...	10/30/2007
7279701	Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The MOSFET may include spaced apart source and drain regions on the semiconductor substrate, and a superlattice including a plur...	10/09/2007
7279699	Integrated circuit comprising a waveguide having an energy band engineered superlattice An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stac...	10/09/2007
7265002	Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of la...	09/04/2007
7229902	Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and ...	06/12/2007
7227174	Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying lay...	06/05/2007
7202494	FINFET including a superlattice A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of st...	04/10/2007
7153763	Method for making a semiconductor device including band-engineered superlattice using intermediate annealing A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at le...	12/26/2006
7123792	Configurable aperiodic grating device The invention relates to the field of grating structures. The invention provides a longitudinal grating having an aperiodic structure, wherein the grating has a selected response characteristic and any repeated unit cell in the structure is significantly longer than...	10/17/2006
7109052	Method for making an integrated circuit comprising a waveguide having an energy band engineered superlattice A method for making an integrated circuit may include forming at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may...	09/19/2006
7071119	Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	07/04/2006
7045377	Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and ...	05/16/2006
7045813	Semiconductor device including a superlattice with regions defining a semiconductor junction A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying lay...	05/16/2006
7034329	Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	04/25/2006
7033437	Method for making semiconductor device including band-engineered superlattice A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direc...	04/25/2006
7018900	Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may be formed by forming a superlattice channel including a plural...	03/28/2006
6993222	Optical filter device with aperiodically arranged grating elements A method for producing aperiodic gratings and waveguides with aperiodic gratings uses a simulated annealing process that starts with a random configuration of grating elements and iteratively computes a spectral response from a Fourier transform of the configuration...	01/31/2006
6958486	Semiconductor device including band-engineered superlattice A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	10/25/2005
6952018	Semiconductor device including band-engineered superlattice A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	10/04/2005
6927413	Semiconductor device including band-engineered superlattice A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	08/09/2005
6897472	Semiconductor device including MOSFET having band-engineered superlattice A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally...	05/24/2005
6891188	Semiconductor device including band-engineered superlattice A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou...	05/10/2005
6878576	Method for making semiconductor device including band-engineered superlattice A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direc...	04/12/2005
6833294	Method for making semiconductor device including band-engineered superlattice A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direc...	12/21/2004
6830964	Method for making semiconductor device including band-engineered superlattice A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direc...	12/14/2004

PatentStorm

Did You Know...

PatentStorm News

Assignee: RJ Mears, LLC