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Assignee: Quantum Semiconductor LLC


Location: San Jose, CA
No. of patents: 12

NumberTitleIssue Date
8183516Layouts for the monolithic integration of CMOS and deposited photonic active layers
Several detailed layout designs are disclosed, for the monolithic integration of avalanche devices in large arrays, that can be operated as Avalanche Photo-Diodes (APDs) or Avalanche Light Emitting Diodes (ALEDs) depending only on the applied bias conditions, which ...
05/22/2012
8120079Light-sensing device for multi-spectral imaging
A method of fabricating multi-spectral photo-sensors including photo-diodes incorporating stacked epitaxial superlattices monolithically integrated with CMOS devices on a common semiconductor substrate. ...
02/21/2012
7521737Light-sensing device
A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are expitaxially grown in one single step on active areas implanted in a common semiconductor substrate, t...
04/21/2009
7518540Multi-mode ADC and its application to CMOS image sensors
An analog-to-digital converter apparatus for analog source signals of one polarity, includes one comparator formed from transistors, a block of digitally addressable voltage sources to set a reference voltage of the comparator, an asynchronous n-bit digital counter,...
04/14/2009
7442953Wavelength selective photonics device
A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons...
10/28/2008
7319423Multi-mode ADC and its application to CMOS image sensors
An analog-to-digital converter apparatus for analog source signals of one polarity, includes one comparator formed from transistors, a block of digitally addressable voltage sources to set a reference voltage of the comparator, an asynchronous n-bit digital counter,...
01/15/2008
7265006Method of fabricating heterojunction devices integrated with CMOS
A method of fabricating heterojunction devices, in which heterojunction devices are epitaxially formed on active area regions surrounded by field oxide regions and containing embedded semiconductor wells. The epitaxial growth of the heterojunction device layers may ...
09/04/2007
7153720CMOS image sensor
Light sensing devices are monolithically integrates with CMOS devices on Thin-Film Silicon-On-insulator (TF-SOI) or Thin-Film Germanium-On-Insulator (TF-GeOI) substrates. Photo-diode active layers are epitaxially grown on the front-side of the substrate and after fu...
12/26/2006
7115963Circuitry for image sensors with avalanche photodiodes
In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are f...
10/03/2006
7068206Asynchronous serial analog-to-digital converter methodology having dynamic adjustment of the bandwidth
A new methodology is disclosed to convert analog electric signals into digital data. The method provides a serial scheme without pre-definition of the number of bits (dynamic range). It allows digital processing of the input signal without sampling and holding of th...
06/27/2006
6943051Method of fabricating heterojunction photodiodes integrated with CMOS
A method in which thin-film p-i-n heterojunction photodiodes are formed by selective epitaxial growth/deposition on pre-designated active-area regions of standard CMOS devices. The thin-film p-i-n photodiodes are formed on active areas (for example n+-dop...
09/13/2005
6891869Wavelength-selective photonics device
A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons...
05/10/2005
 
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