Assignee: QuNano AB

Location: Lund, SE
No. of patents: 24

Number	Title	Issue Date
8183587	LED with upstanding nanowire structure and method of producing such The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding n...	05/22/2012
8178403	Method of producing precision vertical and horizontal layers in a vertical semiconductor structure The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (...	05/15/2012
8143658	Charge storage nanostructure The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap ga...	03/27/2012
8138493	Optoelectronic semiconductor device The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire co...	03/20/2012
8120009	Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco...	02/21/2012
8084337	Growth of III-V compound semiconductor nanowires on silicon substrates The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to ...	12/27/2011
8067299	Nanoelectronic structure and method of producing such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. Th...	11/29/2011
8063450	Assembly of nanoscaled field effect transistors The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostr...	11/22/2011
8049203	Nanoelectronic structure and method of producing such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. Th...	11/01/2011
7960260	Formation of nanowhiskers on a substrate of dissimilar material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is esse...	06/14/2011
7911035	Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substr...	03/22/2011
7910492	Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco...	03/22/2011
7875536	Nanostructures formed of branched nanowhiskers and methods of producing the same A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The sec...	01/25/2011
7829443	Nitride nanowires and method of producing such The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based...	11/09/2010
7826336	Data storage nanostructures The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention compris...	11/02/2010
7745813	Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps....	06/29/2010
7682943	Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps....	03/23/2010
7662706	Nanostructures formed of branched nanowhiskers and methods of producing the same A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The sec...	02/16/2010
7608147	Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined si...	10/27/2009
7528002	Formation of nanowhiskers on a substrate of dissimilar material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is esse...	05/05/2009
7432522	Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco...	10/07/2008
7354850	Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substr...	04/08/2008
7335908	Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps....	02/26/2008
7223444	Particle deposition apparatus and methods for forming nanostructures A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions (5) of predetermined shape on a surface (1) of a first material, by contacting the regions with a stamp for transferring electric charge, ...	05/29/2007

PatentStorm

Bizarre Patents

PatentStorm News

Assignee: QuNano AB