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| Number | Title | Issue Date |
| 6042989 | Radiation sensitive compositions of terpolymers containing organosilicon side chains A radiation sensitive composition comprising (a) a terpolymer containing 20 to 70 mole percent of an acid-labile repeating unit, 3 to 40 mole percent of an acrylic or acrylonitrile based repeating unit and a repeating unit containing silicon side-chains a... | 03/28/2000 |
| 6040107 | Photosensitive diazonaphthoquinone esters based on selected cyclic alkyl ether-containing phenolics and their use in radiation sensitive mixtures A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formula (II): ##STR1## wherein the photosensitive compound is used in a radiation sensiti... | 03/21/2000 |
| 6033993 | Process for removing residues from a semiconductor substrate A process of treating a substrate having photoresist applied thereto, comprising the steps of: (a) removing said photoresist from said substrate by a method selected from the group consisting of photoresist stripping, plasma etch residue cleaning, or a co... | 03/07/2000 |
| 6030932 | Cleaning composition and method for removing residues Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound;(ii) at least... | 02/29/2000 |
| 6028154 | Terpolymers containing organosilicon side chains A terpolymer containing 20 to 70 mole percent of an acid labile repeating unit, 3 to 40 mole percent of an acrylonitrile based repeating unit and a repeating unit containing silicon side chains. The silicon side chain repeating unit is provided in suffici... | 02/22/2000 |
| 6027853 | Process for preparing a radiation-sensitive composition The present invention relates to a process for preparing a radiation-sensitive composition, comprising the steps of (1) passing a solution of a crude polymer comprising a mixture of polymer chains having different molecular weights through a porous polyme... | 02/22/2000 |
| 6020292 | Non-corrosive cleaning composition for removing plasma etching residues A non-corrosive cleaning composition for removing plasma etching residues comprising water, at least one quaternary ammonium hydroxide, and at least one corrosion inhibitor selected from (i) quaternary ammonium silicates and (ii) catechol nucleus-containi... | 02/01/2000 |
| 6010825 | Negatively acting photoresist composition based on polyimide precursors A negatively operating photoresist composition comprising: (a) a polyimide precursor containing repeating structural units of formula (1) ##STR1## the composition comprises in all as many structural units of formula (I), which have residues R2 | 01/04/2000 |
| 5985507 | Selected high thermal novolaks and positive-working radiation-sensitive compositions A high thermal alkali-soluble novolak binder resin, comprising the addition-condensation reaction product of a phenolic mixture with at least one aldehyde source, the feedstock of the phenolic mixture for the reaction comprising: (1) about 25 to about 40 ... | 11/16/1999 |
| 5977041 | Aqueous rinsing composition The present invention is directed to an aqueous post-strip rinsing composition, comprising (1) water; (2) at least one water-soluble organic acid; and (3) at least one water-soluble surface-active agent, the rinse solution having a pH in the range from ab... | 11/02/1999 |
| 5928818 | Photoresist compositions Polymers having an average molecular weight Mw (weight average) of 5,000 to 1,000,000 (measured by gel permeation chromatography), comprising structural repeating units of the formulae I-IV: ##STR1## in which R1, R2, ... | 07/27/1999 |
| 5886119 | Terpolymers containing organosilicon side chains A terpolymer containing 20 to 70 mole percent of an acid labile repeating unit, 3 to 40 mole percent of an acrylic acid or acrylonitrile based repeating unit and a repeating unit containing silicon side chains. The silicon side chain repeating unit is pro... | 03/23/1999 |
| 5863701 | Polymers containing protected styrene and unprotected hydroxbenzyl (meth) acrylamides Novel polymers may be used in resist formulations for the fabrication of printing plates and circuit boards and, in particular, for the fabrication of integrated circuits. No autocatalytic decomposition of the compounds occurs and the resist film obtained... | 01/26/1999 |
| 5856065 | Negative working photoresist composition based on polyimide primers Negative working photoresist compositions containing: a) a polyimide primer containing recurring structural units of formula (I) in the specification as well as b) a photoinitiator for polymerizing olefin double bonds, which are characterized by in that they c... | 01/05/1999 |
| 5849808 | Organic solvent soluble photoresists which are developable in aqueous alkaline solutions A polymer which is insoluble in aqueous-alkaline developer solutions, and comprises structural units of the formula (I): ##STR1## in which R2 is hydrogen, C1 -C18 alkyl, C5 -C10 cycloalkyl, C | 12/15/1998 |
| 5834581 | Process for making polyimide-polyamic ester copolymers A process for making polyimide-polyamic ester copolymer composition comprising reacting at least one diamine, a pyromellitic diacid diester compound; at least one other tetracarboxylic diacid diester compound and a selected phosphoramide in the presence o... | 11/10/1998 |
| 5817610 | Non-corrosive cleaning composition for removing plasma etching residues A non-corrosive cleaning composition for removing plasma etching residues comprising water, at least one quaternary ammonium hydroxide, and at least one corrosion inhibitor selected from (i) quaternary ammonium silicates and (ii) catechol nucleus-containi... | 10/06/1998 |
| 5789525 | Process for making polyimides from diamines and tetracarboxylic diacid diester A process for making polyimide composition comprising reacting at least one diamine, at least one tetracarboxylic diacid diester, selected phosphoramide and at least one base catalyst to form at least one polyimide compound, said reaction carried out at a... | 08/04/1998 |
| 5789524 | Chemical imidization reagent for polyimide synthesis A process for producing a polyimide composition by reacting at least one polyamic acid or at least one polyamic ester or a mixture of at least one polyamic acid and at least one polyamic ester with a selected phosphoramide in the presence of at least one ... | 08/04/1998 |
| 5780566 | Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides Novel polymers may be used in resist formulations for the fabrication of printing plates and circuit boards and, in particular, for the fabrication of integrated circuits. No autocatalytic decomposition of the compounds occurs and the resist film obtained... | 07/14/1998 |
| 5759973 | Photoresist stripping and cleaning compositions A stripping and cleaning composition comprising water, at least one amine compound, and at least one corrosion inhibitor selected from (a) quaternary ammonium silicate and (b) a catechol nucleus-containing oligomer having a molecular weight of about 220 t... | 06/02/1998 |
| 5714559 | Crosslinked polymers Polymers based on combination of different repeating units derived from hydroxy styrene and hydroxyvinylcyclohexane derivatives wherein a portion of the hydroxyl groups are replaced with either acid-labile acetal or ketal protecting groups and where a por... | 02/03/1998 |
| 5674657 | Positive-working photoresist compositions comprising an alkali-soluble novolak resin made with four phenolic monomers The invention is directed to an alkali-soluble novolak binder resin composition made by addition condensation reaction of a phenolic mixture with at least one aldehyde source, the feedstock of said phenolic mixture for the reaction comprising about 33 to ... | 10/07/1997 |
| 5665688 | Photoresist stripping composition A photoresist stripping composition containing: (a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5; (b) 70-20% by weight of alkanolamine compounds; and (c) 0.1-10% by weight of 6,6',6"-(1,3,5-triazine-2,4,6-triyltriimino) ... | 09/09/1997 |