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| Number | Title | Issue Date |
| 7988835 | Silicon dot forming method and silicon dot forming apparatus There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a sil... | 08/02/2011 |
| 7887677 | Silicon object forming method and apparatus A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical spu... | 02/15/2011 |
| 7880392 | Plasma producing method and apparatus as well as plasma processing apparatus Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like)... | 02/01/2011 |
| 7849814 | Plasma generating device A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10 | 12/14/2010 |
| 7829494 | Catalyst for synthesizing carbon nanocoils, synthesizing method of the same, synthesizing method of carbon nanocoils, and carbon nanocoils A method for synthesizing carbon nanocoils with high efficiency, by determining the structure of carbon nuclei that have been attached to the ends of carbon nanocoils and thus specifying a true catalyst for synthesizing carbon nanocoils is implemented. The catalyst ... | 11/09/2010 |
| 7790228 | Method for high-efficiency synthesis of carbon nanostructure Developed is high-efficiency synthesis method and apparatus capable of promoting the initial growth of carbon nanostructure by eliminating the initial fluctuation time and rising time in raw gas flow quantity. A high-efficiency synthesis method of carbon nano... | 09/07/2010 |
| 7763153 | Method and apparatus for forming a crystalline silicon thin film A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 between an emission spectral intensity HÎ... | 07/27/2010 |
| 7651668 | Production method and production device for carbon nano structure A material gas and a catalyst are introduced through a material supplying tube path and a catalyst supplying tube path together with a carrier gas into a reactor equipped on its outer periphery with a heat applicator for thermally decomposing the material gas. The r... | 01/26/2010 |
| 7570502 | Inverter apparatus comprising switching elements A problem to be solved by the present invention is to eliminate variation in potential in a turn-off time period of each GTO element, and to stabilize a gate drawing current by surely performing the turn-off of the GTO element. In an inverter apparatus having a thre... | 08/04/2009 |
| 7087912 | Ion beam irradiation apparatus for suppressing charge up of substrate and method for the same An ion beam irradiation apparatus is equipped with a plasma generator which generates a plasma and supplies it to a region in the vicinity of the upstream side of a substrate, thereby suppressing a charging up of a surface of the substrate, which results from an irr... | 08/08/2006 |
| 7060167 | Vacuum arc vapor deposition apparatus A vacuum arc vapor deposition apparatus can form a film of good quality without uselessly increasing a time from start of film deposition to completion thereof even when a trigger electrode induces vacuum arc discharge in response to turn-off of the vacuum arc disch... | 06/13/2006 |
| 7033462 | Vacuum arc vapor deposition process and apparatus To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the... | 04/25/2006 |
| 7034543 | Method of predicting a lifetime of filament in ion source and ion source device An ion source device includes an ion source having a filament for emitting thermoelectrons, a current measuring device for measuring current flowing through the filament, a voltage measuring device for measuring voltage across the filament, a resistance operation de... | 04/25/2006 |
| 6998034 | Vacuum arc deposition apparatus An arc evaporation source constituting this vacuum arc deposition apparatus has a plurality of cathodes, a trigger electrode, a trigger drive unit, a shutter, and a shutter drive unit. The trigger drive unit changes over the position of the trigger electrode to ther... | 02/14/2006 |
| 6893720 | Object coated with carbon film and method of manufacturing the same An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is mad... | 05/17/2005 |
| 6881475 | Amorphous carbon coated tool and fabrication method thereof An amorphous carbon coated tool includes a base material of WC base cemented carbide, and an amorphous carbon film formed on this base material. The cobalt content in the base material is at least 12% by mass. The maximum thickness of the amorphous carbon film is at... | 04/19/2005 |
| 6872959 | Thermoelectron generating source and ion beam radiating apparatus with the same A thermoelectron generating source including a facial main cathode for emitting thermoelectrons by being heated from behind, a filament for heating the main cathode from behind to emit the thermoelectrons, an extraction electrode for extracting the thermoelectrons e... | 03/29/2005 |
| 6866753 | Vacuum arc vapor deposition apparatus and vacuum arc vapor deposition method A vacuum arc vapor deposition apparatus includes a plurality of magnetic coils for guiding a plasma produced by a vacuum arc evaporating source to the vicinity of a substrate in a film forming chamber by use of a deflection magnetic field. The vacuum arc vapor depos... | 03/15/2005 |
| 6844556 | Ion source, method of operating the same, and ion source system In an ion source, within a support body which supports a plasma production chamber for producing a plasma on the basis of an ion source flange, a cavity is provided ranging from a position near the plasma production chamber to a position near the ion source flange. ... | 01/18/2005 |
| 6835289 | Particle implantation apparatus and particle implantation method The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider... | 12/28/2004 |
| 6831823 | Method and apparatus for chucking a substrate A substrate chucking apparatus includes an electrostatic chuck for electrostatically chucking a substrate, and a DC power supply for applying a DC chucking voltage to the electrostatic chuck. An amplitude of the chucking voltage Vc is exponentially decreased with re... | 12/14/2004 |
| 6805487 | Holder driving unit A holder driving device has: a holder holding a substrate, a shaft supporting the holder, a driver for driving the shaft reciprocatingly and linearly in the direction along the shaft, a bearing unit having mechanical linear motion bearings for supporting the shaft t... | 10/19/2004 |
| 6800862 | Ion implanting apparatus and ion implanting method The ion implanting apparatus is provided with a control device which controls the operating state thereof in a period during which ion implantation is not carried out for a substrate in the state in any mode selected from the above (a) twilight mode in which the flo... | 10/05/2004 |
| 6797964 | Ion source and operation method thereof This ion source is set up to satisfy a relation L | 09/28/2004 |
| 6770889 | Method of controlling electrostatic lens and ion implantation apparatus The ion implantation apparatus deals with an ion beam as a charged particle beam and has an accelerating tube 8 incorporating an electrostatic lens for converging/diverging it. The control of the electrostatic lens is carried out as follows. The swept ion bea... | 08/03/2004 |
| 6750462 | Ion implanting method and apparatus The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with diffe... | 06/15/2004 |
| 6696793 | Ion source An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode h... | 02/24/2004 |
| 6692623 | Vacuum arc vapor deposition apparatus and vacuum arc vapor deposition method A vacuum arc vapor deposition apparatus includes a plurality of magnetic coils for guiding a plasma produced by a vacuum arc evaporating source to the vicinity of a substrate in a film forming chamber by use of a deflection magnetic field. The vacuum arc ... | 02/17/2004 |
| 6686599 | Ion production device for ion beam irradiation apparatus An ion beam irradiation apparatus is provided with a plasma production device 30 which produces a plasma 12 through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate 4. The plasma production device 30 includes... | 02/03/2004 |
| 6656592 | Carbon film and method of forming the same A carbon film C containing carbon as a main component, formed on the surface of a soft base material 4, characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded ... | 12/02/2003 |
| 6651582 | Method and device for irradiating an ion beam, and related method and device thereof When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caus... | 11/25/2003 |
| 6639233 | Apparatus for implanting an ion on a target and method for the same An ion implantation apparatus includes an ion source for extracting ions therefrom at an extraction voltage, an acceleration pipe for accelerating the ions thus extracted at an acceleration voltage of VA and a momentum segregation magnet for se... | 10/28/2003 |
| 6633133 | Ion source An ion source is furnished with a gas introducing mechanism for introducing an inert gas and an organometallic gas being a raw gas into a plasma production container.... | 10/14/2003 |
| 6620247 | Thin polycrystalline silicon film forming apparatus A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming ... | 09/16/2003 |
| 6614027 | Method of controlling electrostatic lens and ion implantation apparatus The ion implantation apparatus deals with an ion beam as a charged particle beam and has an accelerating tube 8 incorporating an electrostatic lens for converging/diverging it. The control of the electrostatic lens is carried out as follows. The swept ion... | 09/02/2003 |
| 6593580 | Ion source vaporizer An ion source vaporizer comprises a hollow vaporizer main body, a heater, and a nozzle. The hollow vaporizer main body has an opening portion. The heater is installed outside the vaporizer main body and evaporates a solid sample within the vaporizer main ... | 07/15/2003 |
| 6574125 | DC-DC converter and bi-directional DC-DC converter and method of controlling the same A DC--DC converter has converter circuit portions 11 and 12, transformers Tr1 and Tr2, and rectifier circuit portions 21 and 22. Two sets of converter circuit portions 11 and 12 respectively include two pairs of switching elements Q | 06/03/2003 |
| 6570166 | Operation method of ion source and ion beam irradiation apparatus This ion source 2 has the heating furnace 4 for heating a solid material 6 to produce a vapor 8, the plasma production vessel 16 for producing a plasma 24 by ionizing this vapor 8, and the vapor conduit tube 10 connecting both the heating furnace 4 and th... | 05/27/2003 |
| 6564744 | Plasma CVD method and apparatus The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from th... | 05/20/2003 |
| 6555831 | Ion implanting apparatus An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18. The con... | 04/29/2003 |
