Assignee: Nippon Mining & Metals Co., Ltd.

Location: Tokyo, JP
No. of patents: 124

Number	Title	Issue Date
8404035	Electroless copper plating solution An electroless copper plating solution that is favorable to improve the adhesion of a plating film and realizes uniform plating at a low temperature is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution,...	03/26/2013
8394508	Plated article having metal thin film formed by electroless plating A plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal th...	03/12/2013
8247301	Substrate and manufacturing method therefor A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium...	08/21/2012
8231728	Epitaxial growth process An epitaxial growth method forming a semiconductor thin film including a heterojunction of a group III-V compound semiconductor by means of molecular beam epitaxy. The method is configured to include: a first step of irradiating a molecular beam of at least one of g...	07/31/2012
8137460	Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN...	03/20/2012
8043705	Resin substrate material, electronic component substrate material manufactured by electroless plating on the same, and method for manufacturing electronic component substrate material There is provided a technology that can be applied as a substrate material to ordinary resin substrate materials and allows the adhesive strength between this substrate material and a plating metal layer to be increased; more specifically, there is provided an ordin...	10/25/2011
7968150	Method of surface treatment using imidazole compound It is an object of the present invention to provide a novel imidazole alcohol compound that adheres strongly to metal surfaces in metal products, especially copper, aluminum and steel products, and that has a superior rust-preventive effect even in a thin film, and ...	06/28/2011
7883998	Vapor phase growth method It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing a...	02/08/2011
7875957	Semiconductor substrate for epitaxial growth and manufacturing method thereof Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the Hg...	01/25/2011
7867564	Metal plating method and pretreatment agent The object of the present invention is to provide a metal plating method by a simple process, for example, on resins on which plating has been heretofore impossible. The metal plating method involves surface treating an article to be plated with a liquid prepared by...	01/11/2011
7824534	Copper electrolytic solution containing as additive compound having specific skeleton, and electrolytic copper foil manufactured therewith The object of the present invention is to obtain a low profile electrolytic copper foil with a low surface roughness at the rough surface side (opposite side from the glossy side) in the electrolytic copper foil manufacture using a cathode drum and, particularly, to...	11/02/2010
7799301	Cathode material for lithium secondary battery and manufacturing method thereof Provided is a cathode material for a lithium secondary battery composed of an aggregate of Li-A-O composite oxide particles (wherein A represents one or more metal elements selected from Mn, Fe, Co and Ni), wherein the lithium composite oxide contains 20 to 100 ppm ...	09/21/2010
7788882	Packaging device and packaging method for hollow cathode type sputtering target Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a ...	09/07/2010
7776133	Method of operating non-ferrous smelting plant In the operation, a flux mainly composed of silica ore and a non-ferrous metal-ore raw-material are charged into a smelting furnace via a conveying system. In order to increase the production amount of the metal, the flux is conveyed and treated through a first syst...	08/17/2010
7771835	Copper electrolytic solution containing quaternary amine compound with specific skeleton and oragno-sulfur compound as additives, and electrolytic copper foil manufactured using the same It is an object of the present invention to obtain a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode ...	08/10/2010
7767139	AlRu sputtering target and manufacturing method thereof An AlRu sputtering target that is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more is provided. It is manufactured by a stable and low-cost method that provides it with an even texture, significantly reduces oxygen, prevents or suppres...	08/03/2010
7755033	Method for analyzing minute amounts of Pd, Rh and Ru, and high frequency plasma mass spectroscope used for same The invention provides a method for analyzing minute amounts of Pd, Rh and Ru with high accuracy by a high-frequency plasma mass spectroscope. The method comprises (1) a step of pretreating a sample by an alkali fusion method using a sodium compound; and (2) a step ...	07/13/2010
7745854	Substrate for growing compound semiconductor and epitaxial growth method It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semi...	06/29/2010
7740718	Target of high-purity nickel or nickel alloy and its producing method Provided is high purity nickel or nickel alloy target for magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputteri...	06/22/2010
7740717	Tantalum sputtering target and method for preparation thereof Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including...	06/22/2010
7718095	Sputtering target, thin film for optical information recording medium and process for producing the same A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1	05/18/2010
7716806	Tantalum sputtering target and method for preparation thereof Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including...	05/18/2010
7713364	Manganese alloy sputtering target and method for producing the same A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that i...	05/11/2010
7713340	Pretreating agent for electroless plating, method of electroless plating using the same and product of electroless plating The object of the present invention is to provide a pretreating agent for electroless plating that is stable and soluble in organic solvents, a method of electroless plating with excellent adhesiveness using it and an electroless plated product. An object to be plat...	05/11/2010
7704307	Electroless palladium plating liquid An electroless palladium plating liquid, with excellent bath stability, that can provide a film with excellent corrosion resistance, solder bondability, and wire bondability is provided. The invention is an electroless palladium plating liquid, containing: a water s...	04/27/2010
7699965	Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, ...	04/20/2010
7699948	Ta sputtering target and method for preparation thereof A manufacturing method of a Ta sputtering target in which a Ta ingot or billet formed by melting and casting is subject to forging, annealing, rolling processing and the like to prepare a sputtering target, wherein the ingot or billet is forged and thereafter subjec...	04/20/2010
7696073	Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u...	04/13/2010
7691172	Metallic powder for powder metallurgy whose main component is iron and iron-based sintered body Provided is iron-based metal powder for powder metallurgy including a metallic soap containing at least one or more types selected from a group of Ag, Au, Bi, Co, Cu, Mo, Ni, Pd, Pt, Sn, Te and W having a higher standard oxidization potential than iron, and an iron ...	04/06/2010
7682529	Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputterin...	03/23/2010
7682420	Method for leaching gold In a method for leaching gold from copper sulfides, the sulfide ores are first subjected to leaching of copper, thereby producing a leaching residue having 7.9% or less of the copper content. This leaching residue is mixed with a leach liquor, which contains the chl...	03/23/2010
7674404	Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc ...	03/09/2010
7670434	Vapor phase growth apparatus It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer hold...	03/02/2010
7666245	Metallic powder for powder metallurgy whose main component is iron and iron-based sintered body Provided is iron-based metal powder for powder metallurgy including a metallic soap containing at least one or more types of metal selected from a group of Ag, Au, Bi, Co, Cu, Mo, Ni, Pd, Pt, Sn and Te having a higher standard oxidization potential than iron, and an...	02/23/2010
7650201	Determination method and processing method of machined surface of plate-like material, and apparatus for use in said methods Provided is a surface treatment method for performing machining such as cutting work, grinding, and electrical discharging to a plate-like material with two- or three-dimensional deformation to realize a uniform thickness. This method includes the steps of mounting ...	01/19/2010
7648621	Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diam...	01/19/2010
7635440	Sputtering target, thin film for optical information recording medium and process for producing the same Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1	12/22/2009
7629625	Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u...	12/08/2009
7618505	Target of high-purity nickel or nickel alloy and its producing method Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputteri...	11/17/2009
7605481	Nickel alloy sputtering target and nickel alloy thin film The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a sold...	10/20/2009

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Assignee: Nippon Mining & Metals Co., Ltd.