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Mouse device with a built-in printer
A mouse device for use as an input device of a computer is provided that includes a housing in which recording paper is loadable, and a printer unit provided within the housing for printing on the recording paper print information received from the computer.
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| Number | Title | Issue Date |
| 8148756 | Separative extended gate field effect transistor based uric acid sensing device, system and method for forming thereof A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire ex... | 04/03/2012 |
| 8134357 | Multi-electrode measuring system The invention provides a multi-electrode measuring system including a front end device which is a sensing device including a multi-electrode sensing device having a plurality of electrodes; a multi-channel fixture coupled to the multi-electrode sensing device; and a... | 03/13/2012 |
| 8133750 | Method for forming extended gate field effect transistor (EGFET) based sensor and the sensor therefrom The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substra... | 03/13/2012 |
| 8062488 | Biosensor containing ruthenium, measurement using the same and the application thereof A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comp... | 11/22/2011 |
| 7994546 | Method for sodium ion selective electrode, sodium ion selective electrode therefrom and sodium ion sensing device The invention provides a method for forming a sodium ion selective electrode, including: (a) providing a conductive substrate; (b) forming a conductive wire which extends from the conductive substrate for external contact; and (c) forming a sodium ion sensing film o... | 08/09/2011 |
| 7820029 | pH measurement system and method for reducing time-drift effects thereof A system of measuring pH of a solution having a calibration device to counteract time-drift effect. The calibration device of the system adjusts a compensation voltage to zero a measuring voltage of a first sensor and only respond to time-drift voltage of the first ... | 10/26/2010 |
| 7754056 | Biosensor containing ruthenium, measurement using the same and application thereof A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comp... | 07/13/2010 |
| 7727370 | Reference pH sensor, preparation and application thereof A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing u... | 06/01/2010 |
| 7598546 | Separative extended gate field effect transistor based vitamin C sensor and forming method thereof A separative extended gate field effect transistor based vitamin C sensor includes: a substrate; a patterned conductive layer on the substrate, including a first electrode region array, at least two first contact regions, a second electrode region and a second conta... | 10/06/2009 |
| 7582500 | Reference pH sensor, preparation and application thereof A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing u... | 09/01/2009 |
| 7501258 | Penicillin G biosensor, systems comprising the same, and measurement using the systems A penicillin G biosensor, systems comprising the same, and measurement using the systems. The penicillin G biosensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semico... | 03/10/2009 |
| 7431811 | Ruthenium oxide electrodes and fabrication method thereof A ruthenium oxide electrode. The ruthenium oxide electrode includes a substrate, a ruthenium oxide film formed thereon, and a conductive wire connecting to the ruthenium oxide film. The invention also provides a method of fabricating the ruthenium oxide electrode. | 10/07/2008 |
| 7403414 | Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall ... | 07/22/2008 |
| 7067343 | ISFETs fabrication method Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrica... | 06/27/2006 |
| 7019343 | SnOISFET device, manufacturing method, and methods and apparatus for use thereof A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage cur... | 03/28/2006 |
| 7009376 | SnOISFET device, manufacturing method, and methods and apparatus for use thereof A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage cur... | 03/07/2006 |
| 6963193 | a-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the ... | 11/08/2005 |
| 6905896 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage cur... | 06/14/2005 |
| 6867059 | A-C:H ISFET device manufacturing method, and testing methods and apparatus thereof An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the ... | 03/15/2005 |
| 6847067 | A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the ... | 01/25/2005 |
| 6806116 | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage cur... | 10/19/2004 |
| 6740911 | α-WO3-gate ISFET devices and method of making the same Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solutio... | 05/25/2004 |
| 6617190 | A-WO3-gate ISFET devices and method of making the same Disclosed is an ISFET comprising a H+ -sensing membrane consisting of RF-sputtering a-WO3. The a-WO3 /SiO2 -gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic a... | 09/09/2003 |
| 6531858 | Method for measuring drift values of an ISFET using the hydrogenated amorphous silicon as a sensing film A method of measuring the the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solut... | 03/11/2003 |
| 6525554 | Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous silicon as a sensing film A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknow... | 02/25/2003 |
