Assignee: Nantero, Inc.

Location: Woburn, MA
No. of patents: 138

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Number	Title	Issue Date
8115187	Triodes using nanofabric articles and methods of making the same Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also h...	02/14/2012
8044388	Method of forming a carbon nanotube-based contact to semiconductor Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. ...	10/25/2011
8013363	Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cat...	09/06/2011
8008745	Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube switching element capable of switching between resistance states and non-volatilely retaining the resistance state. The non-volatile latch circuit includes a volatile latch ...	08/30/2011
8000127	Method for resetting a resistive change memory element A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations—for example, a programming pulse of a predetermined voltage level and pulse width—on a resistive change memory element in ord...	08/16/2011
7986546	Non-volatile shadow latch using a nanotube switch A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the correspondin...	07/26/2011
7985906	Nanotube-based switching elements and logic circuits Nanotube-based switching elements and logic circuits are disclosed. Under one embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between...	07/26/2011
7965156	Carbon nanotube resonators comprising a non-woven fabric of unaligned nanotubes Under one aspect, a resonator 400 includes a nanotube element 410 including a non-woven fabric of unaligned nanotubes and having a thickness, and a support structure 404 defining a gap 406 over which the nanotube element 410 is sus...	06/21/2011
7948082	Method of fabricating a patterned nanoscopic article Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, m...	05/24/2011
7948054	Two-terminal nanotube devices and systems and methods of making same A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in elect...	05/24/2011
7944735	Method of making a nanotube-based shadow random access memory Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable ...	05/17/2011
7943464	Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An elect...	05/17/2011
7928523	Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical con...	04/19/2011
7928521	Non-tensioned carbon nanotube switch design and process for making same The invention comprises a carbon nanotube switch suitable for use in an integrated circuit structure and capable of being moved from a first position in a first plane in the switch to a second position in a second plane in the switch using approximately the same ene...	04/19/2011
7927992	Carbon nanotubes for the selective transfer of heat from electronics Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the ...	04/19/2011
7915637	Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. Thi...	03/29/2011
7915122	Self-aligned cell integration scheme A method of forming a self-aligned logic cell. A nanotube layer is formed over the bottom electrode. A clamp layer is formed over the nanotube layer. The clamp layer covers the nanotube layer, thereby protecting the nanotube layer. A dielectric layer is formed over ...	03/29/2011
7915066	Methods of making electromechanical three-trace junction devices Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an up...	03/29/2011
7911831	Nanotube-on-gate FET structures and applications Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductiv...	03/22/2011
7911034	Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask...	03/22/2011
7906991	Nanotube-based logic driver circuits Nanotube based logic driver circuits. These include pull-up driver circuits, push-pull driver circuits, tristate driver circuits, among others. Under one embodiment, an off-chip driver circuit includes a differential input having first and second signal links, each ...	03/15/2011
7884430	Isolated metal plug process for use in fabricating carbon nanotube memory cells The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A firs...	02/08/2011
7847588	Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performa...	12/07/2010
7859385	Resistive elements using carbon nanotubes Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other...	12/28/2010
7859311	Integrated nanotube and field effect switching devices Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In em...	12/28/2010
7858979	Method of aligning deposited nanotubes onto an etched feature using a spacer A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are ...	12/28/2010
7858185	High purity nanotube fabrics and films Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentrati...	12/28/2010
7855403	Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semic...	12/21/2010
7852114	Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performa...	12/14/2010
7839615	Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically h...	11/23/2010
7839176	Methods of making nanotube-based switching elements and logic circuits Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The con...	11/23/2010
7835170	Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube el...	11/16/2010
7824946	Isolated metal plug process for use in fabricating carbon nanotube memory cells The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A firs...	11/02/2010
7817458	Hybrid circuit having nanotube memory cells A hybrid memory system having electromechanical memory cells is discussed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An acces...	10/19/2010
7786540	Sensor platform using a non-horizontally oriented nanotube element Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affini...	08/31/2010
7782652	Volatile nanotube-based switching elements with multiple controls Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in ...	08/24/2010
7782650	Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device havin...	08/24/2010
7781862	Two-terminal nanotube devices and systems and methods of making same A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in el...	08/24/2010
7780918	Sensor platform using a horizontally oriented nanotube element Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte....	08/24/2010
7777222	Nanotube device structure and methods of fabrication Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article havi...	08/17/2010

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Assignee: Nantero, Inc.