A coffin, for allowing inclination for display of a deceased person in a natural position.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7880195 | Electrostatic discharge protection device and related circuit An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a... | 02/01/2011 |
| 7846350 | Highly saturated red-emitting Mn(IV) activated phosphors and method of fabricating the same The present invention provides a light emitting device comprising a semiconductor light source emitting radiation at about 250˜500 nm; and a phosphor composition radiationally coupled to the semiconductor light source, wherein the phosphor composition is selected f... | 12/07/2010 |
| 7826187 | Transient detection circuit A transient detection circuit coupled between a first power line and a second power line and including a first control unit, a setting unit, and a voltage regulation unit. The first control unit generates a first control signal. The first control signal is at a firs... | 11/02/2010 |
| 7764476 | Power-rail ESD protection circuit without lock-on failure An ESD protection circuit including a discharge device, a first detection circuit, and a second detection circuit. The discharge device provides a discharge path between a first power rail and a second power rail when the discharge device is activated. The discharge... | 07/27/2010 |
| 7758775 | Green-emitting phosphors and process for producing the same This invention relates to a green phosphor and a process for producing the same, wherein the phosphor is represented by a chemical formula: M(Tb1-xLax)4Si3O13, where M includes at least one of Ca and Sr, and 0 | 07/20/2010 |
| 7710696 | Transient detection circuit for ESD protection A transient detection circuit including a detecting unit, a setting unit, and a memory unit. The transient detection circuit provides an information signal to an external instrument when an electrostatic discharge (ESD) event occurs. The detecting unit is coupled be... | 05/04/2010 |
| 7704114 | Gate controlled field emission triode and process for fabricating the same This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semic... | 04/27/2010 |
| 7678623 | Staggered source/drain and thin-channel TFT structure and fabrication method thereof This invention relates to a process for fabricating a staggered source/drain and thin-channel TFT structure, which simplifies the conventional process for fabricating the structure by decreasing the number of mask steps and achieving better results at suppressing th... | 03/16/2010 |
| 7675723 | Transient to digital converters A digital converter including a first adjustment unit and a first transient detection unit. The first adjustment unit adjusts amplitude of an electrostatic discharge (ESD) pulse to generate a first adjustment signal when an ESD event occurs in a first power line and... | 03/09/2010 |
| 7664191 | Method of symbol detection for MIMO dual-signaling uplink CDMA systems The invention provides a block-wise successive interference cancellation (SIC) detection algorithm for a general multi-input multi-output (MIMO) CDMA system over the frequency-selective channels, in which each user's data stream can be simultaneously applied with or... | 02/16/2010 |
| 7532047 | Mixed-voltage input/output buffer A mixed-voltage I/O buffer comprises an input circuit, an output circuit, an I/O pad, a pre-driver circuit coupled to the output circuit, two added coupled N-type transistors, and a dynamical gate-controlled circuit coupled to each gate of the two N-type transistors... | 05/12/2009 |