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| Number | Title | Issue Date |
| 6822493 | Voltage detection circuit, power-on/off reset circuit, and semiconductor device The present invention comprises a first MOS transistor whose gate and drain are connected with a first node, a second MOS transistor whose gate and drain are connected with the first node and a third node, respectively, a first resistive element which is connected b... | 11/23/2004 |
| 6734633 | Bulb-form lamp and manufacturing method of lamp case In a bulb-form lamp, a threaded portion 31 of a lamp cap 5, that is, a shell 30 is made of a conductive resin. The conductive resin shell 30 and an eyelet 50 constituting the lamp cap 5 are composite parts, which are molded ... | 05/11/2004 |
| 6677195 | Semiconductor integrated circuit device and method of producing the same A semiconductor integrated circuit device has: a layer insulating film formed on a semiconductor substrate; a fuse portion which is configured by an uppermost metal wiring layer that is formed on the layer insulating film; an inorganic insulating protecti... | 01/13/2004 |
| 6671301 | Semiconductor device and method for producing the same A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivi... | 12/30/2003 |
| 6667216 | Semiconductor device and method of fabricating the same A gate electrode is formed on a semiconductor substrate with a gate insulating film interposed therebetween. A channel region composed of a first-conductivity-type semiconductor layer is formed in a region of a surface portion of the semiconductor substra... | 12/23/2003 |
| 6653714 | Lateral bipolar transistor A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to ... | 11/25/2003 |
| 6620738 | Etchant and method for fabricating a semiconductor device using the same An etchant for etching at least one of a titanium material and silicon oxide includes a mixed liquid of HCl, NH4 F and H2 O. When the etchant has a NH4 F/HCl molar ratio of less than one, only the titanium material is etch... | 09/16/2003 |
| 6594598 | Method for controlling production line In a production line for obtaining a final product by performing a plurality of process steps on each of a plurality of products, when one of the process steps is finished, measured data is obtained by measuring the characteristics of a product on which t... | 07/15/2003 |
| 6590918 | Semiconductor laser device and method for producing the same A method for producing a semiconductor laser element includes steps of: forming a semiconductor layered structure on a first conductivity type semiconductor substrate, the semiconductor layered structure including a first conductivity type cladding layer,... | 07/08/2003 |
| 6582972 | Low temperature oxidizing method of making a layered superlattice material A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby for... | 06/24/2003 |
| 6573111 | Method of making a semiconductor device with capacitor element A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semicond... | 06/03/2003 |
| 6562674 | Semiconductor integrated circuit device and method of producing the same A semiconductor integrated circuit device has: a layer insulating film formed on a semiconductor substrate; a fuse portion which is configured by an uppermost metal wiring layer that is formed on the layer insulating film; an inorganic insulating protecti... | 05/13/2003 |
| 6563140 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove... | 05/13/2003 |
| 6534874 | Semiconductor device and method of producing the same Through holes are provided in the inner electrodes of a second semiconductor chip, electrodes capable of being plated by electroless plating are formed on the inner walls of the through holes while being insulated from other electrodes, the second semicon... | 03/18/2003 |
| 6522173 | Electronic device An electronic device includes a wiring board, and at least one pair of signal lines that is provided on the wiring board in parallel and has an equal length. A chip is mounted on the wiring board and includes at least one differential driver which outputs... | 02/18/2003 |
| 6503769 | Semiconductor device and method for fabricating the same A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III... | 01/07/2003 |
| 6503808 | Lateral bipolar transistor and method for producing the same A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to ... | 01/07/2003 |
| 6488021 | Method and apparatus for producing semiconductor element A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconduc... | 12/03/2002 |
| 6476330 | Wiring substrate and process for producing the same Signal wirings 22, 23 are formed on a pair of substrates 20, 21, and the substrates are joined together through an insulating layer 24 so that the signal wirings 22, 23 are placed in parallel and facing to each other. The surfaces of the overlapping faces... | 11/05/2002 |
| 6472281 | Method for fabricating semiconductor device using a CVD insulator film A gate insulator film and a gate electrode are formed on an Si substrate, and a CVD insulator film is deposited thereon to cover the gate electrode. Then, arsenic ions are implanted into the Si substrate from above the CVD insulator film to form LDD layer... | 10/29/2002 |
| 6472293 | Method for manufacturing an interconnect structure for stacked semiconductor device In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in... | 10/29/2002 |
| 6465892 | Interconnect structure for stacked semiconductor device In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in... | 10/15/2002 |
| 6461919 | Method for fabricating semiconductor device with different gate oxide compositions First, an isolation region is formed on a surface portion of a semiconductor substrate of silicon, thereby defining first and second regions, which are isolated from each other by the isolation region, on the semiconductor substrate. Next, a tantalum oxid... | 10/08/2002 |
| 6459711 | Optical semiconductor device To more precisely output signals of optical recording media, a semiconductor laser element is mounted in a concave portion on the surface of a semiconductor substrate so that the optical axis of signal detecting light emitted from the semiconductor laser ... | 10/01/2002 |
| 6451707 | Method of removing reaction product due to plasma ashing of a resist pattern After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by usin... | 09/17/2002 |
| 6449183 | Ferroelectric memory system and method of driving the same Under application of a voltage V3 to a cell plate line PC, a voltage difference appearing on a bit line BL and an inverted bit line /BL in accordance with a polarized state of a memory cell capacitor and a line capacitance is amplified by a sense amplifie... | 09/10/2002 |
| 6448598 | Semiconductor memory A semiconductor memory includes plural lower electrodes formed on a semiconductor substrate; a capacitor dielectric film of an insulating metal oxide continuously formed over the plural lower electrodes; plural upper electrodes formed on the capacitor die... | 09/10/2002 |
| 6445047 | Semiconductor device and method for fabricating the same A semiconductor device includes: a first-surface-channel-type MOSFET having a first threshold voltage; and a second-surface-channel-type MOSFET with a second threshold voltage having an absolute value greater than an absolute value of said first threshold... | 09/03/2002 |
| 6441402 | Optical electronic apparatus and method for producing the same An optoelectronic apparatus includes an optoelectronic device, a mounting portion, a frame member surrounding a periphery of the mounting portion, and an optical component. The optical component is placed on an optical component placement portion. The fra... | 08/27/2002 |
| 6441420 | Semiconductor device and method of fabricating the same A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and ... | 08/27/2002 |
| 6438021 | Methods of reading and writing data from/ on semiconductor memory device, and method for driving the device In a semiconductor memory device in which a ferroelectric capacitor is connected to the gate of a field effect transistor (FET), a gate charge at the threshold voltage (Vti) of the FET is represented as Qti. In a polarization-voltage characteristic exhibi... | 08/20/2002 |
| 6436786 | Method for fabricating a semiconductor device A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.... | 08/20/2002 |
| 6433285 | Printed wiring board, IC card module using the same, and method for producing IC card module The present invention provides a printed wiring board, an IC card module including the printed wiring board, and a method for fabricating the IC card module, for improving reliability of IC cards. The printed wiring board and the IC card module of the inv... | 08/13/2002 |
| 6432802 | Method for fabricating semiconductor device After a gate electrode has been formed over a semiconductor region with a gate insulating film interposed therebetween, an amorphous layer is formed in the semiconductor region by implanting heavy ions with a large mass into the semiconductor region using... | 08/13/2002 |
| 6416617 | Apparatus and method for chemical/mechanical polishing A polishing pad is fixed on a polishing platen mounted to be rotatable. An abrasive supply tube supplies an abrasive onto the polishing pad. A substrate holder is mounted to be rotatable above the polishing pad, holds a substrate to be polished and presse... | 07/09/2002 |
| 6409877 | Apparatus and method for plasma etching An apparatus for plasma etching comprises a chamber, a gas inlet port provided in the chamber to introduce etching gas into the chamber, a gas outlet port provided in a side portion of the chamber to exhaust the gas from said chamber, a sample stage provi... | 06/25/2002 |
| 6396508 | Dynamic low-level enhancement and reduction of moving picture disturbance for a digital display There is provided a method and system for improving an image on a display that images pixels. Each of the pixels has an intensity represented by a respective pixel value, an intensity of a given pixel being associated with a number of pulses produced with... | 05/28/2002 |
| 6392953 | Semiconductor memory A plurality of information memory cells and a single reference memory cell are coupled to a single word line. The reference memory cell stores reference information equivalent to a reference potential to information readout. Pieces of information, stored ... | 05/21/2002 |
| 6377490 | Nonvolatile semiconductor memory device and method for driving the same A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulati... | 04/23/2002 |
| 6376373 | Method of manufacturing a semiconductor device While conventionally, a Co film is deposited by directional sputtering directly on a source/drain diffusion layer formed on the surface of an Si substrate while the substrate is being heated, a thin oxide film is formed on the source/drain diffusion layer... | 04/23/2002 |
