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Assignee: MEMC Electronic Materials, SpA


Location: Novara, IT
No. of patents: 9

NumberTitleIssue Date
7223344Method for treating an exhausted glycol-based slurry
A method of separating, recovering and reusing components of an exhausted slurry used in slicing silicon wafers from a silicon ingot. In the method, the solid particles and lubricating fluid of the exhausted slurry are separated without decreasing the viscosity of t...
05/29/2007
7137874Semiconductor wafer, polishing apparatus and method
A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base (23), a turntable (27), a polishing pad (29) and a drive mechanism (45) for driven rotation of a polishing head (63). The polishing head...
11/21/2006
6878302Method of polishing wafers
The method comprises the steps of mounting a first wafer (13) on the mounting member (12) and securing the mounting member to the hub (16) by drawing a vacuum at a first vacuum pressure through the hub; rotating the hub about the hub axis (AH), ...
04/12/2005
6537368Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
A process for preparing a silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen...
03/25/2003
6204152Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back su...
03/20/2001
5994761Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back su...
11/30/1999
5403406Silicon wafers having controlled precipitation distribution
A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a no...
04/04/1995
5401669Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
A process for treatment of a silicon wafer to achieve therein a controlled distribution of the density of oxygen precipitate nucleation centers. In the process, one face of the wafer is shielded and the other, unshielded, face of the wafer is exposed to a...
03/28/1995
5272119Process for contamination removal and minority carrier lifetime improvement in silicon
A process for increasing the minority carrier recombination lifetime in a silicon body contaminated with transition metals, expecially iron. The silicon body is stored at a temperature and for a period sufficient to cause metal to diffuse from the bulk of...
12/21/1993
 
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