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Assignee: Leybold Materials GmbH


Location: Hanau, DE
No. of patents: 7

NumberTitleIssue Date
6372104Cobalt base alloy sputtering target with high magnetic field penetration
A cobalt based alloy having a chromium content in the range of 18-21% permits a high degree of magnetic field penetration which is comparable to non-ferromagnetic alloys. The alloy preferably contains 8-18% Pt and optionally may contain small amounts of M...
04/16/2002
6187253Method of preparing indium oxide/tin oxide target for cathodic sputtering
An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at Tࣙ1, 000° C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the...
02/13/2001
6039855Target for the sputtering cathode of a vacuum coating apparatus and method for its manufacture
A frame (3, 4, 5, . . . 7) at least partially surrounds the target material (19), and serves to mount the target on the cathode backing plate (9), with a separating film or interlayer (20) of soft material disposed between the frame and the cathode backin...
03/21/2000
5728279Cobalt base alloy target for a magnetron cathode sputtering system
Target for a magnetron-cathode sputtering apparatus is made from a cobalt base alloy containing additional elements in such concentrations that intermetallic phases are formed with at least one of these elements and intermetallic phases are observed on th...
03/17/1998
5660599Process for the recycling of spent indium oxide-tin oxide sputtering targets
Compacted ITO material is ground to a powder with particles in the size range of less than 500 μm, whereupon the powder thus obtained is molded into new target blanks, either alone or in a mixture with unused ITO powder, under the simultaneous action of ...
08/26/1997
5531948Process for the production of partially reduced indium oxide-tin oxide targets
The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In2 O3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner....
07/02/1996
5480532Sputter target for cathodic atomization to produce transparent, conductive layers
A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consist...
01/02/1996
 
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