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| Number | Title | Issue Date |
| 7170309 | TDDB test pattern and method for testing TDDB of MOS capacitor dielectric A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes i... | 01/30/2007 |
| 6852606 | Method for forming isolation layer of semiconductor device and semiconductor device A method for forming an isolation layer of a semiconductor device which is capable of improving isolation characteristics of a highly integrated semiconductor device. The method includes the steps of forming a first insulating layer on a substrate; forming both a fi... | 02/08/2005 |
| 6845441 | User initiated microcode modification An instruction decoding unit in a microcomputer is disclosed having an instruction word capable of being selected by a user to conveniently produce application software while maintaining security. The decoding unit in a microcomputer includes an instruction register... | 01/18/2005 |
| 6831362 | Diffusion barrier layer for semiconductor device and fabrication method thereof The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal mate... | 12/14/2004 |
| 6781401 | TDDB test pattern and method for testing TDDB of MOS capacitor dielectric A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes i... | 08/24/2004 |
| 6720998 | Device for managing snap shot in USB camera and method therefor Device and method for managing a snap shot in a USB camera, the device including a camera for taking, and digitizing an image, and providing the image through an end point exclusive for an image, an interface unit for inserting either a frame sync pattern between fr... | 04/13/2004 |
| 6657253 | Memory of multilevel quantum dot structure and method for fabricating the same Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating ... | 12/02/2003 |
| 6637443 | Semiconductor wafer cleaning apparatus and method A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the... | 10/28/2003 |
| 6558985 | Charge coupled device and method of fabricating the same A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first trans... | 05/06/2003 |
| 6555881 | Mask ROM cell and method of fabricating the same Mask ROM cell and method of fabricating the same, is disclosed, including a semiconductor substrate of a first conductivity type, a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one directi... | 04/29/2003 |
| 6532976 | Semiconductor wafer cleaning apparatus A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the... | 03/18/2003 |
| 6489644 | Semiconductor memory device and method for fabricating the same A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under th... | 12/03/2002 |
| 6482734 | Diffusion barrier layer for semiconductor device and fabrication method thereof The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory... | 11/19/2002 |
| 6482712 | Method for fabricating a bipolar semiconductor device A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth ... | 11/19/2002 |
| 6455380 | Semiconductor device and method for fabricating the same A semiconductor device is disclosed, including: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a first gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a first region in... | 09/24/2002 |
| 6438214 | Answering system for a communication device The present invention provides an answering system for a communication device which, when set up with an automatic answering mode because a called party is absent or does not want to answer it, responds to a calling party by outputting automatically an re... | 08/20/2002 |
| 6401146 | Device and method for controlling PCI ethernet Device and method for controlling a PCI ethernet in data transmission between a host computer and various media, is disclosed, the method including the steps of (1) storing data to be transmitted in a memory in succession until an amount of the data becom... | 06/04/2002 |
| 6391725 | Semiconductor device and method for fabricating the same A semiconductor device which is applied to access transistors of an SRAM cell to improve its operation performance and a method for fabricating the same are disclosed. The semiconductor device includes a gate insulating layer formed on a semiconductor sub... | 05/21/2002 |
| 6383834 | Charge coupled device The charge coupled device (CCD) formed according the method of the present invention includes a substrate, at least two photodiodes formed in the substrate and a first insulating layer formed on the substrate. A first transfer gate is formed on a portion ... | 05/07/2002 |
| 6373459 | Device and method for driving a TFT-LCD A device and method for driving a liquid crystal display (LCD). The device includes a mixer for temporarily storing digital picture signals of a plurality of channels and outputting the digital picture signals according to a predetermined order of polarit... | 04/16/2002 |
| 6365972 | Method for forming a metal wiring structure of a semiconductor device A metal wiring stricture includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by a... | 04/02/2002 |
| 6358805 | Method of making a SOI device having fixed channel threshold voltage In a semiconductor device and method for manufacturing the same, a buried insulating layer is formed on a semiconductor substrate, multiple depletion regions of a first conductivity type are formed on the buried insulating layer and separated from one ano... | 03/19/2002 |
| 6351135 | TDDB test pattern and method for testing TDDB of MOS capacitor dielectric TDDB test pattern which can reduce a test time period and improve a precision of a measurement result statistically; and a method for testing TDDBs of MOS capacitor dielectric films using the same, the TDDB test pattern including a plurality of unit test ... | 02/26/2002 |
| 6348708 | Semiconductor device utilizing a rugged tungsten film A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film a... | 02/19/2002 |
| 6348715 | SOI (silicon on insulator) device A SOI device in which floating body effect is reduced to improve performance. The SOI device including a semiconductor substrate; a first buried insulating film formed on the semiconductor substrate; a first conductivity type silicon layer formed on the f... | 02/19/2002 |
| 6335553 | Nonvolatile semiconductor memory and method of fabrication A contactless, nonvolatile metal oxide semiconductor memory device having a rectangular array of memory cells interconnected by word-lines in the row direction of the array and bit-lines in the column direction of the array. Each memory cell has a structu... | 01/01/2002 |
| 6271064 | Thin film transistor and method of manufacturing the same A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the ga... | 08/07/2001 |
| 6236074 | Solid state image sensor device and method of fabricating the same A solid state image sensor device and a method of fabricating the same are disclosed in the present invention. A solid state image sensor device includes a semiconductor substrate, a well region in the semiconductor substrate, a horizontal charge transmis... | 05/22/2001 |
| 6232195 | Structure of semiconductor device An SRAM semiconductor device is disclosed in which an access transistor is an nMOS TFT to thereby reduce cell size and to improve low Vcc characteristics. The semiconductor device comprises a gate electrode of a drive transistor formed on the semiconducto... | 05/15/2001 |
| 6184070 | Thin film transistor and method of manufacturing the same A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the ga... | 02/06/2001 |
| 6171967 | Method for forming a self-aligned metal wire of a semiconductor device A metal wire forming method for a semiconductor device includes the step of forming a first insulator film over a substrate having at least a second insulator film formed thereon and a first conductive layer formed on the second insulator film. Next, a ph... | 01/09/2001 |
| 6171981 | Electrode passivation layer of semiconductor device and method for forming the same An electrode passivation layer of a semiconductor device and a method for forming the same having improved corrosion-resistance and oxidation-resistance are disclosed, the electrode passivation film including a semiconductor substrate; a conductive layer ... | 01/09/2001 |
| 6166945 | Method for controlling memory cell having long refresh interval A method for controlling a memory cell capable of extending a refresh interval and lengthening a storing time of a cell data by raising a data of a high level voltage stored in the cell capacitor above Vdd, thereby reducing power consumption.... | 12/26/2000 |
| 6165823 | Thin film transistor and a fabricating method therefor A thin film transistor includes a first insulating layer and a first conductive layer formed on a semiconductor substrate, a second insulating layer, a second conductive layer and a third insulating layer sequentially formed on the first conductive layer,... | 12/26/2000 |
| 6147926 | Semiconductor memory device Semiconductor memory device which can support a DDR SDRAM latency mode like 2.5 for easy application to a high data rate memory, including a memory cell array having a plurality of memory cell regions for storing external data and forwarding the data on t... | 11/14/2000 |
| 6140700 | Semiconductor chip package and method for fabricating the same The semiconductor chip package includes a package body with a recess and a plurality of barrier parts formed along one side thereof. Each of the barrier parts has a first region and a second region projecting from the first region, and adjacent first regi... | 10/31/2000 |
| 6133081 | Method of forming twin well A method of forming a twin well includes the steps of: forming a field oxide layer on a semiconductor substrate to define active regions of a device, and forming a first mask which exposes a predetermined active region of the semiconductor substrate; ion-... | 10/17/2000 |
| 6127668 | Solid state image pickup device and method for manufacturing the same A solid state image pickup device including implanting impurity ions into a planarizing layer and/or a microlens layer thereon for changing a refractive index thereof, and method for fabricating such a device. The planarizing layer and the microlens layer... | 10/03/2000 |
| 6127705 | Static random access memory cell suitable for high integration density and cell stabilization Static random access memory (SRAM) cell is disclosed, which is suitable for high packing density and cell stabilization, including a substrate, a wordline formed over the substrate, including two parallel legs having gates of first and second access trans... | 10/03/2000 |
| 6124152 | Method for fabricating cob type semiconductor package Method for fabricating a COB type semiconductor package, which is suitable for simplifiing a process from wire bonding to milling, including the steps of (1) mounting chips on a COB film having a plurality of bond holes formed therein, (2) electrically co... | 09/26/2000 |
