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Assignee: Koninklikje Phillips Electronics


Location: BA Eindhoven, NL
No. of patents: 1

NumberTitleIssue Date
7510959Method of manufacturing a semiconductor device having damascene structures with air gaps
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned dispos...
03/31/2009
 
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