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| Number | Title | Issue Date |
| 8114483 | Photon induced formation of metal comprising elongated nanostructures The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal ... | 02/14/2012 |
| 7989925 | Method for forming a group III nitride material on a silicon substrate Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate... | 08/02/2011 |
| 7973105 | Polymer particles having improved mechanical properties and applications of same Polymer particles of improved mechanical hardness are provided, the polymer particles being subjected to a thermal cycle of heating and subsequently cooling. The polymer particles comprise combinations of preferably three monomers, the monomers having hydrophilic an... | 07/05/2011 |
| 7947162 | Free standing single-crystal nanowire growth by electro-chemical deposition The present invention relates to a method for obtaining monocrystalline or single crystal nanowires. Said nanowires are grown in a pattern making use of electro-chemical deposition techniques. Most preferred, the electrolytic bath is based on chlorides and has an ac... | 05/24/2011 |
| 7666765 | Method for forming a group III nitride material on a silicon substrate Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate... | 02/23/2010 |
| 7632771 | UV light exposure for functionalization and hydrophobization of pure-silica zeolites A method is provided for making pure-silica-zeolite films useful as low-k material, specifically, more hydrophobic, homogeneous and with absence of cracks. The method utilizes a UV cure; preferably the UV cure is performed at temperatures at higher than the depositi... | 12/15/2009 |
| 7517765 | Method for forming germanides and devices obtained thereof The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a subs... | 04/14/2009 |
