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| Number | Title | Issue Date |
| 7927935 | Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 04/19/2011 |
| 7660042 | Apparatus for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 02/09/2010 |
| 7528023 | Apparatus for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 05/05/2009 |
| 7410508 | Apparatus for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 08/12/2008 |
| 7115457 | Method for crystallizing semiconductor with laser beams Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles betwe... | 10/03/2006 |
