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| Number | Title | Issue Date |
| 7671768 | Digital-to-analogue converter system with increased performance The invention relates to an N-bit digital-to-analogue converter (DAC) system, comprising—a DAC unit comprising an N-bit master DAC and a slave DAC, yielding a master DAC unit output signal and a slave DAC unit output signal, respectively, said N-bit master DAC hav... | 03/02/2010 |
| 7649722 | Electrostatic discharge protected circuits A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properti... | 01/19/2010 |
| 7646138 | Diamond enhanced thickness shear mode resonator A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. ... | 01/12/2010 |
| 7643709 | Slanted segmented coupler A slanted grating coupler for coupling a radiation beam between a waveguide lying substantially in a plane on a substrate and an optical element outside that plane is provided, whereby the slanted grating coupler has a good coupling efficiency for medium or low inde... | 01/05/2010 |
| 7626226 | Method for improving erase saturation in non-volatile memory devices and devices obtained thereof Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, program... | 12/01/2009 |
| 7589425 | Method of manufacturing a semiconductor device having damascene structures with air gaps A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises providing a substantially planar layer having a first metal layer, depositing a via level dielectric layer, patterning the... | 09/15/2009 |
| 7576385 | Method for improving erase saturation in non-volatile memory devices and devices obtained thereof Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, program... | 08/18/2009 |
| 7570180 | Method for syntactically analyzing a bit stream using a schema and a method of generating a bit stream based thereon A method and apparatus for transforming a description of an encoded bit stream is described. The encoded bit stream comprises data packets and the description is written in a markup language such as BSDL. A group of one or more data packets is described in the descr... | 08/04/2009 |
| 7569882 | Non-volatile multibit memory cell and method of manufacturing thereof One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second contact region, the first semiconductor structure and the second semicon... | 08/04/2009 |
| 7552304 | Cost-aware design-time/run-time memory management methods and apparatus Methods, apparatus and software products are described for design-time data-assignment techniques for hierarchical memories, e.g., multi-banked memories in an essentially digital system as well as methods, apparatus and software products for run-time memory manageme... | 06/23/2009 |
| 7547928 | AlGaN/GaN high electron mobility transistor devices The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin... | 06/16/2009 |
| 7528387 | Methods and systems for characterising and optimising immersion lithographic processing A method is provided for characterizing an immersion lithography process of a device using an immersion liquid. In order to study pre-soak and post-soak effects on the image performance of an immersion lithography process, the method includes determining at least on... | 05/05/2009 |
| 7521369 | Selective removal of rare earth based high-k materials in a semiconductor device A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k mater... | 04/21/2009 |
| 7517765 | Method for forming germanides and devices obtained thereof The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a subs... | 04/14/2009 |
| D590442 | Multilingual block | 04/14/2009 |
| 7511116 | Method of preparing derivatives of polyarylene vinylene and method of preparing an electronic device including same A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to ob... | 03/31/2009 |
| 7510959 | Method of manufacturing a semiconductor device having damascene structures with air gaps A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned dispos... | 03/31/2009 |
| 7508718 | Method for operating a non-volatile charge-trapping memory device and method for determining programming/erase conditions A method for determining programming/erase conditions and a method for operating a charge-trapping semiconductor device are disclosed. Programming and erase conditions are determined such that a first net charge distribution variation profile, upon going from progra... | 03/24/2009 |
| 7504329 | Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate... | 03/17/2009 |
| 7468328 | Method for producing patterned thin films The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes... | 12/23/2008 |
| 7458251 | Method for determining solvent permeability of films A method is disclosed to measure the permeability of films or coatings towards solvents (e.g. water). First a substrate comprising an absorption or container layer is provided, preferably the material is a porous material. To study water permeability, the porous mat... | 12/02/2008 |
| 7449920 | Power-aware configurable driver circuits for lines terminated by a load The present invention provides a driver circuit for driving a line terminated by a load, wherein said driver circuit is configurable for design time selected energy/delay working points. The configuration capability is used, e.g. during run-time, for dynamically sel... | 11/11/2008 |
| 7446164 | Method of preparing derivatives of polyarylene vinylene and method of preparing an electronic device including same A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to ob... | 11/04/2008 |
| 7445390 | Method and system for optically coupling components A method is described for providing a predetermined optical path in an optical module, the predetermined optical path being defined by predetermined optical characteristics for the optical module. a modifiable optical element is provided at a predetermined position ... | 11/04/2008 |
| 7442635 | Method for producing a semiconductor device and resulting device The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with ... | 10/28/2008 |
| 7440085 | Apparatus and methods for simultaneous surface acoustic wave and surface plasmon resonance measurements The invention relates to a method and apparatus for obtaining and analysing physical properties of a substance. Optical data and acoustical data are obtained for the substance and the data are used to apply a model of the optical/acoustical properties of the substan... | 10/21/2008 |
| 7439117 | Method for designing a micro electromechanical device with reduced self-actuation A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a pred... | 10/21/2008 |
| 7432233 | Composition and method for treating a semiconductor substrate The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is st... | 10/07/2008 |
| 7422019 | Composition and method for treating a semiconductor substrate The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is st... | 09/09/2008 |
| 7415902 | Method for the quantification of hydrophilic properties of porous materials Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first a... | 08/26/2008 |
| 7405914 | Electrostatic discharge protection circuit An electrostatic discharge (ESD) protection circuit for the protection of an electronic circuit from an ESD event. The electronic circuit, in operation, is provided with a supply voltage and a reference voltage (typically electrical ground) via voltage terminals and... | 07/29/2008 |
| 7399635 | Impurity measuring method for Ge substrates The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the... | 07/15/2008 |
| 7400024 | Formation of deep trench airgaps and related applications A method for forming deep trench or via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial material (e.g. poly-Si), depositing spacers on the sidewalls of the unfille... | 07/15/2008 |
| 7393768 | Etching of structures with high topography The present invention relates to a method for the patterning of a stack of layers on a surface with high topography. A method of the present invention can be used for gate patterning for multiple Gate FETs (MuGFETs), for patterning of the control gate in non-volatil... | 07/01/2008 |
| 7390708 | Patterning of doped poly-silicon gates A method is provided for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically the element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates... | 06/24/2008 |
| 7388785 | Method for extracting the distribution of charge stored in a semiconductor device A method is described for extracting the spatial distribution of charge stored in a charge-trapping layer of a semiconductor device. The method comprises the steps of performing a first charge-pumping measurement on a device under test using a variation of the upper... | 06/17/2008 |
| 7372346 | Acoustic resonator A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode... | 05/13/2008 |
| 7368377 | Method for selective deposition of a thin self-assembled monolayer A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a... | 05/06/2008 |
| 7361453 | Method for creating a pattern in a material and semiconductor structure processed therewith A method of manufacturing a semiconductor device with precision patterning is disclosed. A structure of a small dimension is created in a material, such as a semiconductor material, using a first and a second pattern, the patterns being identical but displaced over ... | 04/22/2008 |
| 7356085 | Embedded multiple description scalar quantizers for progressive image transmission A method and a device for transmission and/or reception of digital signals are disclosed. In one embodiment, the method comprises quantizing a source digital signal to generate with different quantizations at least a first and a second bit-stream, of which at least ... | 04/08/2008 |