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Assignee: Interuniversitair Micro Elektronica Centrum vzw


Location: Leuven-Heverlee, BE
No. of patents: 5

NumberTitleIssue Date
5369372Method for resistance measurements on a semiconductor element with controlled probe pressure
A method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, wherein in order to bring the contact resistance between the conductors and the element to, to hold it at,a predetermine...
11/29/1994
5272369Circuit element with elimination of kink effect
A circuit element which includes a source region of a first conductance type provided with a source terminal, an intermediate region of the first conductance type separated from the source region by a first volume, a first channel region portion of a seco...
12/21/1993
5271084Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used
Method and apparatus for measuring the radiation originating from one side of a wafer of semiconductor material using a pyrometer, wherein non-blackbody compensation radiation is projected onto that side to compensate for the reflectivity of the wafer of ...
12/14/1993
5035479Device for optical signal processing showing transistor operation
An optical device provided with a junction region for reflecting radiation to be transmitted in the device, and a gate for controlling the electron density in said junction region, is fast and simple to manufacture....
07/30/1991
5036273System of measuring a state density in a semi-conductor element and a method using this system
A system of measuring a state density in a semi-conductor element and a method using this system. The system measuring a state density in a semi-conductor element comprises a pulse generator and a control unit for controlling size and shape of the pulses,...
07/30/1991
 
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