Bizarre Patents
User-operated amusement apparatus for kicking the user's buttocks
An apparatus including a user-operated and controlled apparatus for self-infliction of repetitive blows to the user's buttocks by a plurality of elongated arms bearing flexible extensions that rotate under the user's control.
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| Number | Title | Issue Date |
| 8184456 | Adaptive power converter and related circuitry A resonant power converter circuit stage can be configured to: i) receive a rectified voltage derived from an AC input voltage; ii) convert the rectified voltage to an internal voltage based on the application of a duty cycle that varies depending on the input volta... | 05/22/2012 |
| 8183595 | Normally off III-nitride semiconductor device having a programmable gate A III-nitride semiconductor device which includes a charged gate insulation body. ... | 05/22/2012 |
| 8174855 | Power factor correction integrated circuit with critical conduction mode A power factor correction integrated circuit housed in an integrated circuit package for controlling a boost converter circuit having an input inductor coupled in series with a boost rectifier between a rectified AC line input voltage and a DC bus voltage, on a DC b... | 05/08/2012 |
| 8174250 | Fixed frequency ripple regulator A ripple regulator for providing a pulse width modulation (PWM) signal for regulating an output voltage of a power converter switching stage. The regulator including a ripple circuit for providing a ripple voltage; a comparison circuit for comparing the ripple volta... | 05/08/2012 |
| 8174051 | III-nitride power device A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device. ... | 05/08/2012 |
| 8174048 | III-nitride current control device and method of manufacture A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is i... | 05/08/2012 |
| 8173245 | Peelable tape carrier A support tape used in semiconductor wafer processing that includes an adhesive tape and a plurality of spaced support ribs arranged on the adhesive tape. ... | 05/08/2012 |
| 8168000 | III-nitride semiconductor device fabrication A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking. ... | 05/01/2012 |
| 8164272 | 8-pin PFC and ballast control IC The present invention relates to a fluorescent ballast control integrated circuit (IC) with power factor correction (PFC), and more particularly to a ballast control IC with a low pin count and improved programmability. The invention relates further to control metho... | 04/24/2012 |
| 8159003 | III-nitride wafer and devices formed in a III-nitride wafer A III-nitride device having a support substrate that may include a first silicon body, a second silicon body, an insulation body interposed between the first and second silicon bodies, and a III-nitride body formed over the second silicon body. ... | 04/17/2012 |
| 8154874 | Use of flexible circuits in a power module for forming connections to power devices A power module includes a power switching device and a flexible circuit with first and second traces electrically connected to the switching device, the first and second traces serving as an input signal carrier and an output signal carrier for the switching device.... | 04/10/2012 |
| 8154324 | Half bridge driver input filter A driver integrated circuit for driving at least one high voltage half bridge stage. The driver including a filter circuit for filtering a signal provided to the half bridge stage, a minimum pulse width of the signal being near a constant time of the filter, wherein... | 04/10/2012 |
| 8154105 | Flip chip semiconductor device and process of its manufacture A semiconductor die and method of making it are provided. The die includes a first via extending through the entire thickness of the die and a first via electrode disposed inside the via electrically connecting an electrode at a top surface of the die with another e... | 04/10/2012 |
| 8153464 | Wafer singulation process A method of singulating a semiconductor die from a wafer is provided. The method includes etching or cutting several trenches into the wafer from a front surface of the wafer, such that each trench extends along an entire side of the die; depositing a passivation la... | 04/10/2012 |
| 8148964 | Monolithic III-nitride power converter A power arrangement that includes a monolithically integrated III-nitride power stage having III-nitride power switches and III-nitride driver switches. ... | 04/03/2012 |
| 8148957 | Power switch-mode circuit with devices of different threshold voltages The high side or low side FET of a buck converter, or both, are replaced by plural parallel devices of different threshold voltage and are turned on and off in a sequence which offers the best turn on and turn off characteristics related to high and low threshold vo... | 04/03/2012 |
| 8143729 | Autoclave capable chip-scale package A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test. ... | 03/27/2012 |
| 8143655 | Trench schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 03/27/2012 |
| 8138697 | Sensorless speed detection during zero vector A speed estimation method for determining the speed of a sensorless permanent magnet brushless motor having one or more phases driven by one or more stages of an inverter, each stage including high- and low-switches connected in series across a DC Bus and having a r... | 03/20/2012 |
| 8134851 | Secondary side synchronous rectifier for resonant converter A resonant converter including a primary side switching stage having high- and low-side switches series connected at a switching node and controlled by a primary side controller; a transformer having a primary coil and a secondary coil, the secondary coil having at ... | 03/13/2012 |
| 8134329 | Buck converter with improved filter design A buck converter for use in controlling a motor in accordance with an embodiment of the present invention includes a power input operable for connection to a DC power supply, a switch for selectively connecting the motor to the power supply, a pulse width modulation... | 03/13/2012 |
| 8125083 | Protective barrier layer for semiconductor device electrodes A semiconductor device includes a die with at least one electrode on a surface thereof, at least one solderable contact formed on the electrode, and a passivation layer formed over the electrode and including an opening that exposes the solderable contact. The passi... | 02/28/2012 |
| 8125024 | Trench MOSgated device with deep trench between gate trenches A trench gated MOSFET especially for operation in high radiation environments has a deep auxiliary trench located between the gate trenches. A boron implant is formed in the walls of the deep trench (in an N channel device); a thick oxide is formed in the bottom of ... | 02/28/2012 |
| 8120139 | Void isolated III-nitride device Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The dopant selective etch may be an electro-chemical or photo-electro-chem... | 02/21/2012 |
| 8106451 | Multiple lateral RESURF LDMOST A lateral DMOS transistor that includes two RESURF regions of one conductivity and two RESURF regions of another conductivity disposed between the base region and the drain region thereof. ... | 01/31/2012 |
| 8106446 | Trench MOSFET with deposited oxide A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body. ... | 01/31/2012 |
| 8105921 | Gallium nitride materials and methods The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and t... | 01/31/2012 |
| 8102668 | Semiconductor device package with internal device protection An integral impedence is formed on or within a lead frame pin of a semiconductor package and receives a connection from an electrode of a semiconductor die within the package to eliminate the need for adjustment and protective impedences external of the package. The... | 01/24/2012 |
| 8102192 | DC brushed motor drive with circuit to reduce di/dt and EMI, for MOSFET Vth detection, voltage source detection, and overpower protection A gate driver for performing gate shaping on a first transistor of having gate, source, and drain terminals, the first transistor being selected from a switching stage of a power switching circuit having high- and low-side transistors series connected at a switching... | 01/24/2012 |
| 8101995 | Integrated MOSFET and Schottky device A power semiconductor device that includes a trench power MOSFET with deep source field electrodes and an integrated Schottky diode. ... | 01/24/2012 |
| 8097938 | Conductive chip-scale package A method for manufacturing a semiconductor package that includes forming a frame inside a conductive can, the frame being unwettable by liquid solder. ... | 01/17/2012 |
| 8093834 | Automotive HID headlamp ballast control IC A ballast control integrated circuit for a ballast driving a high intensity discharge (HID) lamp. The control integrated circuit has a first circuit for controlling a DC to DC converter receiving a first DC voltage and providing an increased DC voltage. The first ci... | 01/10/2012 |
| 8093695 | Direct contact leadless flip chip package for high current devices Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first... | 01/10/2012 |
| 8093597 | In situ dopant implantation and growth of a III-nitride semiconductor body In one embodiment a method enabling in situ dopant implantation during growth of a III-nitride semiconductor body, comprises establishing a growth environment for the III-nitride semiconductor body in a composite III-nitride chamber having a dopant implanter and a g... | 01/10/2012 |
| 8089147 | IMS formed as can for semiconductor housing An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a... | 01/03/2012 |
| 8085562 | Merged ramp/oscillator for precise ramp control in one cycle PFC converter A one cycle power factor correction converter circuit comprising a switch for controlling a DC output voltage of the converter circuit, the switch being switched by a drive signal having a frequency determined by a clock signal; the converter circuit being provided ... | 12/27/2011 |
| 8084785 | III-nitride power semiconductor device having a programmable gate A III-nitride semiconductor device which includes a charged floating gate electrode. ... | 12/27/2011 |
| 8084783 | GaN-based device cascoded with an integrated FET/Schottky diode device A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching... | 12/27/2011 |
| 8083832 | Paste for forming an interconnect and interconnect formed from the paste A composite paste for forming interconnects that includes a quantity of metallic binder particles, a quantity of metallic filler particles, and a quantity of flux, where the binder particles comprise no more than 94.5% of the total weight of the quantity of the comp... | 12/27/2011 |
| 8081493 | Electronic power conditioner with integrated magnetics A power supply including a main stage converter having a bridge circuit having input switches for receiving input voltage and providing an output, a main transformer and at least one output choke having an integrated magnetic structure coupled to the output of the b... | 12/20/2011 |
