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Assignee: Institute of Semiconductors, Chinese Academy of Sciences


Location: Beijing, CN
No. of patents: 3

NumberTitleIssue Date
7704764Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings
Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etchin...
04/27/2010
7476558Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-sta...
01/13/2009
7285431Method for manufacturing a GaN based LED of a black hole structure
This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate m...
10/23/2007
 
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