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"During my service in the United States Congress, I took the initiative in creating the Internet."
Al Gore ; The basis for the later misquote by US Republicans that Gore had "invented" the Internet. Gore was the leading political champion of the modern-day Internet.
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| Number | Title | Issue Date |
| 8184550 | Gateway with improved QoS awareness A device and method for exchanging data frames are disclosed. In one aspect, the device exchanges data between a WAN and one or more LAN segments in an optimized way leading to a better quality of experience for the user. The device comprises an interface exchanging... | 05/22/2012 |
| 8182872 | Method of fabricating a porous elastomer A method is provided for fabricating a porous elastomer, the method comprising the steps of: providing a predetermined amount of a liquid elastomer and a predetermined amount of a porogen; mixing the liquid elastomer and the porogen in vacuum until a homogenous emul... | 05/22/2012 |
| 8173999 | Functionalization of poly(arylene-vinylene) polymers for electronic devices A method is provided for modifying a poly(arylene vinylene) or poly(heteroarylene vinylene) precursor polymer having dithiocarbamate moieties by reacting it with an acid and further optionally reacting the acid-modified polymer with a nucleophillic agent. Also provi... | 05/08/2012 |
| 8173267 | Functionalization of poly(arylenevinylene) polymers for integrated circuits A method is provided for modifying a poly(arylene vinylene) or poly(heteroarylene vinylene) precursor polymer having dithiocarbamate moieties by reacting it with an acid and further optionally reacting the acid-modified polymer with a nucleophilic agent. Also provid... | 05/08/2012 |
| 8170388 | Method for effective refractive index trimming of optical waveguiding structures and optical waveguiding structures A method for trimming an effective refractive index of optical waveguiding structures made for example in a high refractive index contrast material system. By compaction of cladding material in a compaction area next to patterns or ridges that are formed in the core... | 05/01/2012 |
| 8164755 | Method for determining an analyte in a sample In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherei... | 04/24/2012 |
| 8158523 | Quantification of hydrophobic and hydrophilic properties of materials A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is re... | 04/17/2012 |
| 8158451 | Method for manufacturing a junction The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect of the invention is a method for manufacturing a junction ... | 04/17/2012 |
| 8150272 | Systems and methods for transferring single-ended burst signal onto differential lines, especially for use in burst-mode receiver Systems and methods for transferring incoming single-ended burst signals of which at least one characteristic varies widely from burst to burst onto a pair of differential lines. The systems comprise an input for receiving an incoming burst signal, a signal adaptati... | 04/03/2012 |
| 8148220 | Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To ac... | 04/03/2012 |
| 8148188 | Photoelectrochemical cell with carbon nanotube-functionalized semiconductor electrode Photoelectrochemical cells and methods are provided, in particular, to the functionalization of semiconductor surfaces such that its semiconducting and light generating properties are maintained and the surface becomes stable in wet environments. In particular the p... | 04/03/2012 |
| 8142720 | Molecules suitable for binding to a metal layer for covalently immobilizing biomolecules An article is provided for immobilizing functional organic biomolecules (e.g. proteins, DNA, and the like) through a covalent bond to a thiolate or disulfide monolayer to a metal surface wherein an extra activation step of the surface layer or an activation step of ... | 03/27/2012 |
| 8140023 | System and method for communication with adaptive link control One inventive aspect relates to a system and method for performing communication between a transmitting device and a receiving device along a communication path. The transmit device and the receive device each have at least one antenna. At least one of the devices h... | 03/20/2012 |
| 8126040 | Device and method for calibrating MIMO systems A device and method for calibrating MIMO systems are disclosed. In one aspect, a calibration circuit comprises at least a first and a second input/output port, each arranged for being connected to a different transmitter/receiver pair of a multiple input multiple ou... | 02/28/2012 |
| 8124428 | Structure and method for testing MEMS devices A method for determining the presence of a sacrificial layer under a structure. The method includes providing at least one structure arranged above a substrate having a major surface lying in a plane, the at least one structure being clamped at at least one side. Th... | 02/28/2012 |
| 8120440 | Voltage controlled oscillator (VCO) with simultaneous switching of frequency band, oscillation core and varactor size The invention relates to a voltage controlled oscillator for generating a variable frequency. The oscillator comprises an oscillator core and a transconductive portion for compensating current losses in the oscillator core. The oscillator core comprises an inductive... | 02/21/2012 |
| 8120115 | Tunnel field-effect transistor with gated tunnel barrier A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with p... | 02/21/2012 |
| 8119511 | Non-volatile memory device with improved immunity to erase saturation and method for manufacturing same A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-fun... | 02/21/2012 |
| 8119488 | Scalable quantum well device and method for manufacturing the same A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate ... | 02/21/2012 |
| 8114770 | Pre-treatment method to increase copper island density of CU on barrier layers A method for producing on-chip interconnect structures on a substrate is provided, comprising at least the steps of providing a substrate and depositing a ruthenium-comprising layer on top of said substrate, and then performing a pre-treatment of the Ru-comprising l... | 02/14/2012 |
| 8114483 | Photon induced formation of metal comprising elongated nanostructures The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal ... | 02/14/2012 |
| 8094051 | Sigma-delta-based analog-to-digital converter An analog to digital converting device is proposed for generating a digital output signal of an RF analog input signal. The device comprises a first analog to digital converter stage, a mixer, a second analog to digital converter stage and a digital filter. The firs... | 01/10/2012 |
| 8080505 | Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing b... | 12/20/2011 |
| 8079093 | Dual tip atomic force microscopy probe and method for producing such a probe One inventive aspect is related to an atomic force microscopy probe. The probe comprises a tip configuration with two probe tips on one cantilever arm. The probe tips are electrically isolated from each other and of approximately the same height with respect to the ... | 12/13/2011 |
| 8072012 | Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To ac... | 12/06/2011 |
| 8067810 | Self-actuating RF MEMS device by RF power actuation Systems and methods for controlling a micro electromechanical device using power actuation are disclosed. The disclosed micro electromechanical systems comprise at least one electrostatically actuatable micro electromechanical device and an actuation device. The mic... | 11/29/2011 |
| 8062962 | Method for enhancing the reliability of a P-channel semiconductor device and a P-channel semiconductor device made thereof A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric layer has an exponentially decreasing density of defect levels Et | 11/22/2011 |
| 8062931 | Surface treatment and passivation of AlGaN/GaN HEMT In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, ... | 11/22/2011 |
| 8062497 | Method for forming a hermetically sealed cavity One inventive aspect relates to a method for forming hermetically sealed cavities, e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices. The method allows forming hermetically sealed cavities at a controlled atmosphere and pressure and at low... | 11/22/2011 |
| 8054155 | Two layer transformer One aspect of the invention relates to a symmetrical transformer with a stacked coil structure comprising two coils each having at least two turns. The coils are located in two conductive planes. The structure includes four identical basic elements, each basic eleme... | 11/08/2011 |
| 8043868 | Method and apparatus for detecting an analyte A method for determining a concentration of an analyte is provided. The method includes providing a substrate including a conductive region and a recognition layer where the conductive region has a first surface operatively coupled with the recognition layer; The me... | 10/25/2011 |
| 8037430 | Method for exploring feasibility of an electronic system design One inventive aspect relates to a method of determining an estimate of system-level yield loss for an electronic system comprising individual components subject to manufacturing process variability leading to manufacturing defects. The method comprises obtaining a d... | 10/11/2011 |
| 8036870 | Simulation method for efficient characterization of electronic systems under variability effects A method of determining the behavior of an electronic system comprising electronic components under variability is disclosed. In one aspect, the method comprises for at least one parameter of at least one of the electronic components, showing variability defining a ... | 10/11/2011 |
| 8034689 | Method for fabricating a semiconductor device and the semiconductor device made thereof A method for fabricating a semiconductor device and the device made thereof are disclosed. In one aspect, the method includes providing a substrate comprising a semiconductor material. The method further includes patterning at least one fin in the substrate, the fin... | 10/11/2011 |
| 8030099 | Method for determining time to failure of submicron metal interconnects The present disclosure is related to a method for determining time to failure characteristics of a microelectronics device. A test structure, being a parallel connection of a plurality of such on-chip interconnects, is provided. Measurements are performed on the tes... | 10/04/2011 |
| 8027040 | Method for determining an analyte in a sample In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherei... | 09/27/2011 |
| 8024718 | System and method for optimizing source code One aspect of the invention includes a method of address expression optimization of source-level code. The source-level code describes the functionality of an application to be executed on a digital device. The method comprises first inputting first source-level cod... | 09/20/2011 |
| 8021989 | Method for high topography patterning One inventive aspect is related to a method for isolating structures of a semiconductor material, comprising providing a pattern of the semiconductor material comprising at least one elevated line, defining device regions in the pattern, the device regions each comp... | 09/20/2011 |
| 8021948 | Scalable interpoly dielectric stacks with improved immunity to program saturation A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described... | 09/20/2011 |
| 8017509 | Growth of monocrystalline GeN on a substrate The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° ... | 09/13/2011 |
