Did You Know...
...that on Dec. 15, 1836, the Patent Office was completely destroyed by fire? Lost were some 7,000 models, 9,000 drawings, and 230 books plus all records of patent applications and grants.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7889574 | Semiconductor memory device employing clamp for preventing latch up A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a co... | 02/15/2011 |
| 7638827 | Semiconductor memory device A semiconductor memory device capable of preventing bridge formations in a peripheral circuit region includes: a cell region; a peripheral circuit region adjacent to the cell region; and a plurality of line patterns formed in the cell region and the peripheral circu... | 12/29/2009 |
| 7616032 | Internal voltage initializing circuit for use in semiconductor memory device and driving method thereof Provided are an internal voltage initializing circuit for use in a semiconductor memory and a driving method thereof, which are capable of preventing a back bias voltage from abnormally increasing due to a pumping operation of a VPP pump according to a change in a l... | 11/10/2009 |
| 7616022 | Circuit and method for detecting skew of transistors in a semiconductor device A circuit and method for easily detecting skew of a transistor within a semiconductor device are provided. The circuit for detecting the skew of the transistor includes a linear voltage generating unit for outputting a linear voltage by using a first supply voltage,... | 11/10/2009 |
| 7595526 | Capacitor and method for fabricating the same A method for manufacturing a capacitor in a semiconductor device for securing capacitance without a merging phenomenon during a MPS grain growth process. The manufacturing step begins with a preparation of a substrate. The interlayer dielectric (ILD) layer is formed... | 09/29/2009 |
| 7553724 | Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film The present invention relates to a method manufacturing a code address memory (CAM) cell. The present invention uses a dielectric film in which an oxide film and a nitride film between a floating gate and a control gate in a flash memory cell are stacked as a gate i... | 06/30/2009 |
